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    SM56V16800

    Abstract: MSM56V16800E-8
    Text: E2G1053-18-54 O K I Semiconductor M SM 56V16800E sversion:,ul1998 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M SM 56V16800E is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		E2G1053-18-54 56V16800E 576-Word 56V16800E MSM56V16800E PII44-P-400-0 SM56V16800 MSM56V16800E-8 PDF

    active suspension

    Abstract: 3tr5 ujt transistor MSM56V16800E MSM56V16800E-10 MSM56V16800E-8 transistor mark BA
    Text: E2G1053-18-54 O K I Sem iconductor 56V16800E Thisversion:,ul 1998 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The 56V16800E is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Oki’s CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		E2G1053-18-54 MSM56V16800E 576-Word MSM56V16800E cycles/64 active suspension 3tr5 ujt transistor MSM56V16800E-10 MSM56V16800E-8 transistor mark BA PDF