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    576MB Price and Stock

    TXC Corporation 8NE-24.576MBM-T

    XTAL OSC XO 24.576MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 8NE-24.576MBM-T Cut Tape 2,930 1
    • 1 $1.93
    • 10 $1.846
    • 100 $1.5453
    • 1000 $1.26629
    • 10000 $1.26629
    		Buy Now
    TME 8NE-24.576MBM-T 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.37
    • 10000 $1.37
    		Get Quote

    FTS QTM325T-24.576MBD-T

    3.2x2.5 XO 3.3V 25ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QTM325T-24.576MBD-T Reel 2,500 1
    • 1 $1.29
    • 10 $1.125
    • 100 $0.819
    • 1000 $0.6
    • 10000 $0.474
    		Buy Now

    FTS QTM252T-24.576MBD-T

    2.5x2.0 XO 3.3V 25ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QTM252T-24.576MBD-T Reel 2,500 1
    • 1 $1.43
    • 10 $1.25
    • 100 $0.91
    • 1000 $0.667
    • 10000 $0.527
    		Buy Now

    FTS QTM216J-24.576MBJ-T

    2.0x1.6 XO 3.3V 50ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey QTM216J-24.576MBJ-T Reel 2,000 1
    • 1 $1.43
    • 10 $1.25
    • 100 $0.91
    • 1000 $0.667
    • 10000 $0.527
    		Buy Now

    TXC Corporation TD-24.576MBD-T

    MEMS OSC XO 24.5760MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TD-24.576MBD-T Cut Tape 1,497 1
    • 1 $2.65
    • 10 $1.641
    • 100 $1.011
    • 1000 $0.7878
    • 10000 $0.7878
    		Buy Now
    Find more 576MB price and stock on Findchips.com

    576MB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Samsung EOL

    Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
    Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM


    Original     		PDF 288-576Mb 10-20ns 18-72Mb 64Kb-16Mb 8Mb-64Mb 16Mb-512Mb 16Mb-1Gb 256Mb-2Gb 200Mhz -40oC Samsung EOL IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E

    code A106

    Abstract: MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106
    Text: Preliminary MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 0.1 Sept. 2003 MD18R3268(G)AG0 Preliminary (32Mx18)*8(16)pcs 32 Bit RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V


    Original     		PDF MD18R3268 256/288Mbit 32Mx18) 576Mb 32K/32ms code A106 MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106

    IS49NLS18320

    Abstract: No abstract text available
    Text: IS49NLS96400,IS49NLS18320 576Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at 533 MHz clock frequency)


    Original     		PDF IS49NLS96400 IS49NLS18320 576Mb 533MHz 533MHz) IS49NLS18320-25BLI IS49NLS96400-33BI IS49NLS96400-33BLI IS49NLS18320-33BI IS49NLS18320-33BLI IS49NLS18320

    F37Z

    Abstract: X1800 hspice MT49H16M36 533401 MT49H16M36
    Text: Advance‡ 576Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 576Mb CIO RLDRAM II Memory MT49H16M36 MT49H32M18 MT49H64M9 Features Figure 1: • 533 MHz DDR operation 1,067 Mb/s/pin data rate • Organization – 16 Meg x 36, 32 Meg x 18, and 64 Meg x 9


    Original     		PDF 576Mb: 576Mb MT49H16M36 MT49H32M18 MT49H64M9 09005aef81fe35b2/Source: 09005aef81f83d49 MT49H F37Z X1800 hspice MT49H16M36 533401

    MT49H32M18C

    Abstract: No abstract text available
    Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock


    Original     		PDF 576Mb: MT49H32M18C MT49H64M9C 09005aef80a41b59/Source: 09005aef811ba111 MT49H32M18C

    09005aef815b2df8

    Abstract: MT49H32M18C
    Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 19.2 Gb/s peak bandwidth (x18 at 533 MHz clock


    Original     		PDF 576Mb: MT49H32M18C MT49H64M9C 09005aef815b2df8/Source: 09005aef811ba111 09005aef815b2df8 MT49H32M18C

    hspice MT49H16M36

    Abstract: MT49H16M36FM MT49H16M36 MT49H32M18FM
    Text: Advance‡ 576Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 576Mb CIO Reduced Latency RLDRAM II MT49H16M36 MT49H32M18 MT49H64M9 For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 533 MHz DDR operation (1,067 Mb/s/pin data rate)


    Original     		PDF 576Mb: 576Mb MT49H16M36 MT49H32M18 MT49H64M9 09005aef81fe35b2/Source: 09005aef81f83d49 hspice MT49H16M36 MT49H16M36FM MT49H32M18FM

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576S09/18L 144-Ball 067Gb/s/pin GS4576S09-533T. 576Mb 4576Sxx

    MARKING CODE 11gb

    Abstract: No abstract text available
    Text: MR18R326GAG0 Preliminary Change History Version 0.1 September 2003 - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Datasheet Page 0 Version 0.1 Sept. 2003 MR18R326GAG0 Preliminary (32Mx18)*16pcs RIMMTM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V


    Original     		PDF MR18R326GAG0 256/288Mbit 32Mx18) 16pcs 576Mb 32K/32ms MARKING CODE 11gb

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM LLDRAMTM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576S09/18L 144-Ball 067Gb/s/pin GS4576S09-533T. 576Mb 4576Sxx

    J2/GS4576C09GL-24I

    Abstract: No abstract text available
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 4576Cxx J2/GS4576C09GL-24I

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576S09/18L 144-Ball 067Gb/s/pin GS4576S09-533T. 576Mb 4576Sxx

    DK97

    Abstract: RLDRAM J2/GS4576C09GL-24I
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAMTM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 576Mb 4576Cxx DK97 RLDRAM J2/GS4576C09GL-24I

    Diskonchip md2202-d16

    Abstract: ap-doc-039 MD2202-D32 AP-DOC-016 MD2202-D16 Diskonchip AP-DOC-030 how to access MD2202-D16 MD2200-D24 IM-DOC-022
    Text: Data Sheet January 2002 DiskOnChip 2000 DIP MD2200/2/3 Features ƒ Single-chip plug-n-play flash disk ƒ Low power, single 3.3V or 5V power ƒ ƒ ƒ ƒ ƒ ƒ supply 16MB to 576MB capacity 1GB in 2002 Pinout and structure compatible with DiskOnChip Millennium DIP 8MB


    Original     		PDF MD2200/2/3 576MB 32-pin 91-SR-002-42-8L Diskonchip md2202-d16 ap-doc-039 MD2202-D32 AP-DOC-016 MD2202-D16 Diskonchip AP-DOC-030 how to access MD2202-D16 MD2200-D24 IM-DOC-022

    GS4576C36GL-24I

    Abstract: GS4576C09GL-24I GS4576C36GL-25I GS4576C18GL-25I GS4576C09GL-25I J2/GS4576C09GL-24I
    Text: GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 576Mb 067Gb/s/pin 4576Cxx GS4576C36GL-24I GS4576C09GL-24I GS4576C36GL-25I GS4576C18GL-25I GS4576C09GL-25I J2/GS4576C09GL-24I

    RLDRAM3

    Abstract: IS49RL18320 168-FBGA RLDRAM
    Text: 576Mb: x18, x36 RLDRAM 3 Features RLDRAM 3 IS49RL18320 – 2 Meg x 18 x 16 Banks IS49RL36160 – 1 Meg x 36 x 16 Banks Features • 1066 MHz DDR operation 2133 Mb/s/ball data rate • 76.8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency) • Organization


    Original     		PDF 576Mb: IS49RL18320 IS49RL36160 -107E, RLDRAM3 IS49RL18320 168-FBGA RLDRAM

    K4R761869A-GCT9

    Abstract: K4R761869A K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1
    Text: Direct RDRAM K4R761869A 576Mbit RDRAM A-die 1M x 18bit x 32s banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R761869A Change History Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


    Original     		PDF K4R761869A 576Mbit 18bit 256/288Mb K4R761869A-GCT9 K4R761869A K4R761869A-FCM8 K4R761869A-FCT9 K4R761869A-GCM8 K4R761869A-GCN1

    MICRON BGA PART MARKING

    Abstract: 195u MT49H16M36
    Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Figure 1: • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING 195u MT49H16M36

    IS49NLC96400

    Abstract: No abstract text available
    Text: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2011 FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz


    Original     		PDF IS49NLC96400 IS49NLC18320 IS49NLC36160 576Mb 533MHz 533MHz) 144ball)

    MICRON BGA PART MARKING

    Abstract: amd catalog MT49H32M18C
    Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock


    Original     		PDF 576Mb: MT49H32M18C MT49H64M9C 09005aef80a41b59/Source: 09005aef811ba111 MICRON BGA PART MARKING amd catalog MT49H32M18C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 4576Cxx

    DK97

    Abstract: J2/GS4576C09GL-24I
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAMTM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 576Mb 4576Cxx DK97 J2/GS4576C09GL-24I

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576S09/18L 144-Ball 067Gb/s/pin GS4576S09-533T. 576Mb 4576Sxx

    576mb

    Abstract: delta A221 J2/GS4576C09GL-24I
    Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II


    Original     		PDF GS4576C09/18/36L 144-Ball 067Gb/s/pin 4576Cxx 576mb delta A221 J2/GS4576C09GL-24I