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    ternary content addressable memory

    Abstract: Ternary CAM SCT9022 SCT4502 Sibercore Technologies Sibercore Sibercore Technologies SCT9022 Content Addressable Memory "Content Addressable Memory"
    Text: The SCT4502 Packet Forwarding Engine PFE offers the optimal price performance trade off for today's system requirements. Based on ternary Content Addressable Memory (CAM) technology, the SCT4502 is fully compatible with other, higher capacity members of the SiberCAM family (SCT9022 and SCT1842).


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    PDF SCT4502 SCT9022 SCT1842) 576-bits 10Mb/100Mb/1Gb/10Gb SCT-001-4502 ternary content addressable memory Ternary CAM Sibercore Technologies Sibercore Sibercore Technologies SCT9022 Content Addressable Memory "Content Addressable Memory"

    renesas tcam

    Abstract: tcam renesas idt tcam Ayama 20000 cypress tcam Sahasra 50000 NSE sahasra Sahasra 50000 tcam tcam cypress
    Text: CYNSE20512 CYNSE20256 PRELIMINARY Ayama 20000 Network Search Engine Family Data Sheet Features — QDR-II up to 250 MHz, Burst-of-2 and Burst-of-4 — Convenient “Clamshellable” pinout for ease of board design • Fast search rates — Up to 266 million searches per second MSPS in


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    PDF CYNSE20512 CYNSE20256 72/144-bit 32/288-bit 576-bit 32-bit 166/200LVCMOS/200HSTL renesas tcam tcam renesas idt tcam Ayama 20000 cypress tcam Sahasra 50000 NSE sahasra Sahasra 50000 tcam tcam cypress

    intel 8203

    Abstract: RTL 8188 82580 82575 0x1528 electromagnetic pulse kit INTEL 845 MOTHERBOARD CIRCUIT diagram foxconn ls 36 motherboard manual 8237 direct memory access controller 81217
    Text: Intel 82580 Quad/Dual Gigabit Ethernet LAN Controller Datasheet LAN Access Division LAD FEATURES External Interfaces Provided: • Virtualization Ready: PCIe v2.0 (5Gbps and 2.5Gbps) x4/x2/x1; called PCIe in this document. • Enhanced VMDq1 support: •


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    PDF 1000BASE-T, 100BASE-TX, 10BASE-T 1000Base-SX/ 1000BASE-KX 1000BASE-BX 0x0034; 321027-015EN intel 8203 RTL 8188 82580 82575 0x1528 electromagnetic pulse kit INTEL 845 MOTHERBOARD CIRCUIT diagram foxconn ls 36 motherboard manual 8237 direct memory access controller 81217

    75K62100

    Abstract: 75P42100 75P52100 AN-279 IDT75P42100
    Text: Datasheet Brief 75P42100 NETWORK SEARCH ENGINE 32K x 72 Entries To request the full IDT75P42100 datasheet, please contact your local IDT Sales Representative or call 1-800-345-7015 Block Diagram Device Description IDT provides proven, industry-leading network search engines


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    PDF 75P42100 IDT75P42100 75P42100 75K62100 75P52100 AN-279

    PEC 4179 DIODE

    Abstract: 327879-001US
    Text: Intel Communications Chipset 89xx Series Datasheet October 2012 Order Number: 327879-001US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS


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    PDF 327879-001US LK100 PEC 4179 DIODE 327879-001US

    1117 1.8v

    Abstract: TAG J3 136D diode 10-16 BLD 135D intel 945 motherboard schematic diagram transistor mps 9632 intel 82576 SFP 1-by-2 sdp31 ENCODER "Development Kit"
    Text: Intel Ethernet Controller I350 Datasheet LAN Access Division LAD Features External Interfaces provided: Power saving features:  PCIe v2.1 (2.5GT/s and 5GT/s) x4/x2/x1; called PCIe in this document.  MDI (Copper) standard IEEE 802.3 Ethernet interface for


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    PDF 1000BASE-T, 100BASE-TX, 10BASE-T 1000BASE-SX/ IEEE802 1000BASE-KX 1000BASE-BX INF-8074i 1117 1.8v TAG J3 136D diode 10-16 BLD 135D intel 945 motherboard schematic diagram transistor mps 9632 intel 82576 SFP 1-by-2 sdp31 ENCODER "Development Kit"

    27C280

    Abstract: 27C220 27C240 C1995 J40AQ NM27P210 capacitor 10 MF 25v
    Text: NM27P210 1 048 576-Bit 64K x 16 Processor Oriented CMOS EPROM General Description Features The NM27P210 is a 1024K Processor Oriented EPROM (POPTM ) configured as 64K x 16 It’s designed to simplify microprocessor interfacing while remaining compatible with


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    PDF NM27P210 576-Bit NM27P210 1024K 27C280 27C220 27C240 C1995 J40AQ capacitor 10 MF 25v

    27C010A

    Abstract: 27c010a-10 27C010* texas 32-Lead 2. 27C010A - 12 TMS27C010A TMS27PC010A 27c010a-15 dallas 1265 32pin cmos TI 072
    Text: TMS27C010A 131 072 BY 8ĆBIT UV ERASABLE TMS27PC010A 131 072 BY 8ĆBIT PROGRAMMABLE READĆONLY MEMORIES SMLS110C − NOVEMBER 1990 − REVISED SEPTEMBER 1997 D Organization . . . 131 072 by 8 Bits D Single 5-V Power Supply D Operationally Compatible With Existing


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    PDF TMS27C010A TMS27PC010A SMLS110C 32-Pin 32-Lead 27C/PC010A-10 PC010A-12 PC010A-15 PC010A-20 27C010A 27c010a-10 27C010* texas 2. 27C010A - 12 27c010a-15 dallas 1265 32pin cmos TI 072

    FG388A

    Abstract: BMR 611
    Text: CYNSE10512 CYNSE10256 CYNSE10128 CONFIDENTIAL PRELIMINARY Ayama 10000 Network Search Engine Cypress Semiconductor Corporation Document #: 38-02069 Rev. *F • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised July 13, 2004 [+] Feedback


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    PDF CYNSE10512 CYNSE10256 CYNSE10128 FG388A BMR 611

    74als2238

    Abstract: No abstract text available
    Text: SN74ALS2238 32 x 9 x 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN FIRST-OUT MEMORY D3501, A P R IL 1990 N PACKAQE TOP VIEW Independent Asychronous Input« and Outputs Bidirectional RSTK 32 Word« by 9 BK. Each * Data Rate« from 0 to 40 MHz * F a ll-T h ro u g h T im e . . . 2 2 n « iy p


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    PDF SN74ALS2238 D3501, 576-bit 74als2238

    27LV010A

    Abstract: No abstract text available
    Text: TMS27LV010A1 048 576-BIT UV ERASABLE LOW VOLTAGE PROGRAMMABLE ROM TMS27LV010A1 048 576-BIT LOW VOLTAGE ONE-TIME PROGRAMMABLE ROM SMLS113-DECEMBER 1992 x 8 J AND N PACKAGESt TOP VIEW Single 3.3-V Power Supply Operationally Compatible With Existing 1-Megabit EPROMs


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    PDF TMS27LV010A1 576-BIT SMLS113-DECEMBER 32-Pin 32-Lead 27LV010A-20 27LV010A-25 27LV010A

    Untitled

    Abstract: No abstract text available
    Text: SMJ27C210 1 048576-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM G S028A — MARCH 19B8 — REVISED N O VEM BER 1990 J Package Top View Single 5-V Power Supply Operationally Compatible With Existing Megabit EPROMs 40-Pln Dual-In-line Package All Inputs and Outputs Fully TTL


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    PDF SMJ27C210 048576-BIT S028A 40-Pln SMJ27C210-12 SMJ27C210-15 SMJ27C210-17 SMJ27C210-20 SMJ27C210-25

    TMS44C256

    Abstract: TMS44C256-10 TMS44C256-80 44C256
    Text: TMS44C256 262 144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY ‘jM G S l'M C D Q1 I u 1 DQ4 W ; 3 18 ' D Q 3 V SS DQ2 I 7 RAS ! 9 R E AD 13 j A 6 12 j A5 TIM E T IM E TIM E OR ta R ta (C ) 'a (C A ) W R IT E A3 [ 9 (tC A A ) CYCLE (M A X ) (M A X ) (M IN)


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    PDF TMS44C256 144-WORD TMS44C256s TMS44C256N TMS44C256-10 TMS44C256-80 44C256

    suss Instruments

    Abstract: D3501 SN74ALS2238 gba 2674
    Text: SN74ALS2238 32 x 9 x 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN FIRST-OUT MEMORY D3501, APRIL 1990 N PACKAGE TOP VIEW Independent Asychronous Inputs and Outputs Bidirectional 30 R lT B DBF BO B1 B2 GND B3 B4 B5 B6 GND VCC 12 29 Vc c A7 A8 LDCKA FULLA UNCKB EMPTYB


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    PDF SN74ALS2238 D3501, 576-bit ALS2238 suss Instruments D3501 SN74ALS2238 gba 2674

    Untitled

    Abstract: No abstract text available
    Text: MBM93419 FUJITSU M IC R O E L E C T R O N IC S . INC. TTL 576-BIT BIPOLAR RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM93419 is a high speed TTL read/write randomaccess memory, organized as 64 words by 9 bits, with opencollector outputs. M BM93419 is packaged in a


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    PDF MBM93419 576-BIT MBM93419 BM93419 28-pin F93419.

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this


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    PDF TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70 072-WORD TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL 576-bit 32-P-0820-0

    TC551001

    Abstract: No abstract text available
    Text: TOSHIBA TC551001 BPI/BFI/BFTI/BTRI/BSTI/BSRI-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this


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    PDF TC551001 BPI/BFI/BFTI/BTRI/BSTI/BSRI-85L 072-WORD TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI 576-bit 32-P-0820-0

    MP 1048 EM

    Abstract: 28f210
    Text: TMS28F210 1 048576-BIT FLASH MEMORY SMJS21 OC-D E C EM BE R 1 9 9 2 - REVISED MAY 1996 FN PACKAGE TOP VIE W O r g an iz a t io n . . . 64K x 1 6 Flash M e m o r y Pi n C o m p a t i b l e Wi t h E x i s t i n g 1 - M e g a b i t EPROMs All I n p u t s / O u t p u t s T T L C o m p a t i b l e


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    PDF TMS28F210 048576-BIT SMJS21 MP 1048 EM 28f210

    panasonic timer switch tb 179

    Abstract: panasonic SH-D
    Text: P a n a X S e r ie s B ‘ r i n g i n g ‘T o m o r r o w MICROCOMPUTER MN102L35G LSI User Manual Ver. 2.20 March 6, 1998 Panasonic • 0Q167flS 273 ■ t o ‘T o d a y Restrictions and Warnings Regarding the Use of the Technical Data and the Semiconductors Described in This Document


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    PDF MN102L35G 0Q167flS panasonic timer switch tb 179 panasonic SH-D

    Untitled

    Abstract: No abstract text available
    Text: 1M x molate 1 DRAM MDM11000-80/10/12/15 Issue 3.1 : October 1991 M osaic S em iconductor Inc. Pin Definitions Package Type: T,V 1,048,576 x 1 CMOS High Speed Dynamic RAM Features Sit WE RAS Row Access Times of 80,100/120/150 ns 5 Voft Supply ± 10% 512 Refresh Cycles 8 ms


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    PDF MDM11000-80/10/12/15 MIL-STD-883C MIL-883 cA92i

    Untitled

    Abstract: No abstract text available
    Text: A S ch lu m b e rg e r C o m p a n y 93419 64 x 9-Bit Static Random Access Memory B ipolar Division T T L B ipolar M em ory Description The 93419 is a 576-bit read/w rite Random Access M em ory RAM , organized 64 w ords by nine bits per word with open c o lle cto r outputs. It is ideally suited for


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    PDF 28-Pin 576-bit 9341m

    Untitled

    Abstract: No abstract text available
    Text: Advance information A S 7C 31026LL 3 .3 V 6 4 K x 1 6 Inte I¡watt'” low power C M O S SRAM Features •O p tm ized design fo r battery operated portable s/stan s •E a s/ m en o iy ejqpansbn w ifh CE, O E inputs • ivtelliw ait?“ active pow e r reduction circuitry


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    PDF 31026LL

    27C010A

    Abstract: 27c010a10 SMLS110A-NOVEMBER 27c010a-10
    Text: TMS27C010A1 048 576-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC010A1 048 576-BIT PROGRAMMABLE READ-ONLY MEMORY SM LS110A-N OVEM BER1990-REVISED DECEM BER 1992 Organization. 128K x 8 J A ND N PA CK AG ESt TO P V IEW Single 5-V Power Supply Operationally Compatible With Existing


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    PDF TMS27C010A 1048576-BIT TMS27PC010A1 576-BIT LS110A-N BER1990-REVISED 32-Pin 32-Lead 27C010A-10 27C010A 27c010a10 SMLS110A-NOVEMBER 27c010a-10

    cq714

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION TMS47C1024 131,072-WORD BY 8-BIT READ-ONLY MEMORY NOVEMBER 1 9 8 5 N PACKAGE 1 3 1 ,0 7 2 X 8 Organization TOP VIEW Fully Static (No Clocks, No Refresh) «' 1 VJ28 D v Cc 27 J A 14 2 3 26 3 A13 4 25 3 A8 24 3 A 9 5 23 n a h 6 7 22 3 A 1 6


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    PDF TMS47C1024 072-WORD 576-bit cq714