Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    58 65NG MOSFET Search Results

    58 65NG MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    58 65NG MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    58 65NG

    Abstract: No abstract text available
    Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol


    Original     		PDF NTD5865N NTD5865N/D 58 65NG

    65NG

    Abstract: 58 65NG 48 65NG
    Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol


    Original     		PDF NTD5865N NTD5865N/D 65NG 58 65NG 48 65NG

    49 65NG

    Abstract: 65NG
    Text: NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol


    Original     		PDF NTD5865N NTD5865N/D 49 65NG 65NG

    58 65NG mosfet

    Abstract: 65NG 369D NTD5865NT4G
    Text: NTD5865N N-Channel Power MOSFET 60 V, 38 A, 18 mW Features Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS TJ = 25°C unless otherwise noted Symbol


    Original     		PDF NTD5865N NTD5865N/D 58 65NG mosfet 65NG 369D NTD5865NT4G

    Untitled

    Abstract: No abstract text available
    Text: NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features • • • • • Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(on) MAX


    Original     		PDF NTD5865N NTD5865N/D