Untitled
Abstract: No abstract text available
Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1,7dB MAX. @ f=20GHz NF=2.0dB (MAX.) @ f=24GHz • High Associated Gain: Gas=14dB (MIN.) @ f=20GHz Gas=12dB (MIN.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION
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FMM5701LG
20GHz
24GHz
18-24GHz
FMM5701LG
18-24GHz
FCSI0598M200
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fmm5051
Abstract: No abstract text available
Text: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)
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FMM5051VF
FMM5051VF
fmm5051
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Untitled
Abstract: No abstract text available
Text: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)
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FMM5051VF
FMM5051VF
FCSI0501M200
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150759
Abstract: 110GHZ
Text: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)
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FMM5051VF
FMM5051VF
FCSI0501M200
150759
110GHZ
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FUJITSU MMIC LNA
Abstract: FMM5701LG lg s12 mmic case styles 26GHz LNA fmm5701
Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.6dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION The FMM5701LG is a LNA MMIC designed for applications in the
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FMM5701LG
24GHz
18-24GHz
FMM5701LG
18-24GHz
FCSI0999M200
FUJITSU MMIC LNA
lg s12
mmic case styles
26GHz LNA
fmm5701
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diode Free 18-24GHz
Abstract: FMM5701LG FUJITSU MMIC LNA
Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.6dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION The FMM5701LG is a LNA MMIC designed for applications in the
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FMM5701LG
24GHz
18-24GHz
FMM5701LG
18-24GHz
FCSI0999M200
diode Free 18-24GHz
FUJITSU MMIC LNA
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Untitled
Abstract: No abstract text available
Text: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)
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FMM5051VF
FMM5051VF
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FMM5701LG
Abstract: 26GHz LNA nf 931 24ghz FMM5701X mmic n1 diode Free 18-24GHz 584 amplifer 584 MMIC microwave databook
Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.7dB MAX. @ f=20GHz NF=2.0dB (MAX.) @ f=24GHz • High Associated Gain: Gas=14dB (MIN.) @ f=20GHz Gas=12dB (MIN.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION
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FMM5701LG
20GHz
24GHz
18-24GHz
FMM5701LG
18-24GHz
26GHz LNA
nf 931
24ghz
FMM5701X
mmic n1
diode Free 18-24GHz
584 amplifer
584 MMIC
microwave databook
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LNA marking D d
Abstract: MARKING GC INFINEON discrete LNA D
Text: Infineon technologies GaAs MMIC CMY191 Preliminary Data Sheet • Ultralinear Mixer with integrated high IP3\ LNA and LO-Buffer for PCS-CDMA receiver applica tions. • Bypass switch for LNA integrated. • Mixer Input IP3 of typical 24 dBm. • LNA + Mixer mode 3 V; 15 mA;/ = 1.96 GHz; @
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CMY191
Q62702-M23
P-TSSOP-10-2
LNA marking D d
MARKING GC INFINEON
discrete LNA D
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RF LNA 10 GHz
Abstract: No abstract text available
Text: GaAs MMIC CMY 191 Preliminary Data Sheet Ultralinear Mixer with integrated high IP3I LNA and LO-Buffer for PCS-CDMA receiver applications. • Bypass switch for LNA integrated. • Mixer Input IP3 of typical 24 dBm. • LNA + Mixer mode 3 V; 15 mA; f = 1.96 GHz; @
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P-TSSOP-10-2
Q62702-M23
GPS09230
RF LNA 10 GHz
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UPC1678
Abstract: UPC1678B
Text: UPC1678B UPC1678G UPC1678P 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES_ • HIGH OUTPUT POWER:+18 dBm • EXCELLENT FREQUENCY RESPONSE: 1.9 GHz TYP at 3 dB Down • HIGH POWER GAIN: 23 dB TYP at 500 MHz
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UPC1678B
UPC1678G
UPC1678P
UPC1678G)
UPC1678
UPC1678B)
UPC1678B,
UPC1678G,
UPC1678P
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UPC1678B
Abstract: UPC167 UPC1678
Text: UPC1678B UPC1678G UPC1678P 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES • HIGH OUTPUT POWER: +18 dBm • EXCELLENT FREQUENCY RESPONSE: 1.9 GHz TYP at 3 dB Down • HIGH POWER GAIN: 23 dB TYP at 500 MHz
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UPC1678B
UPC1678G
UPC1678P
UPC1678G)
UPC1678
UPC1678B)
UPC1678B,
UPC1678G,
UPC167
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Untitled
Abstract: No abstract text available
Text: HMMC-1002 DC–50 GHz Variable Attenuator Data Sheet Description The HMMC-1002 is a monolithic, voltage variable, GaAs IC attenuator that operates from DC to 50 GHz. It is fabricated using MWTC’s MMICB process which features an MBE epitaxial layer, backside ground vias,
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HMMC-1002
HMMC-1002
HMMC1002
5965-5452E
5988-1892EN
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TC721A
Abstract: No abstract text available
Text: HMMC-1002 DC–50 GHz Variable Attenuator Data Sheet Description Features The HMMC-1002 is a monolithic, voltage variable, GaAs IC attenuator that operates from DC to 50 GHz. It is fabricated using MWTC’s MMICB process which features an MBE epitaxial layer, backside ground vias, and FET
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HMMC-1002
HMMC-1002
5965-5452E
AV02-3628EN
TC721A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS «PC2745TB, //PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The /¿PC2745TB and /¿PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile
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PC2745TB,
//PC2746TB
PC2745TB
PC2746TB
//PC2745TB
//PC2746TB
//PC2745T/
PC2746T
PC2745TB/iuPC2746TB
//PC2745T///PC2746T.
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2745T
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS //PC2745TB, //PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The //PC2745TB and //PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile
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uPC2745TB
uPC2746TB
//PC2745TB
//PC2746TB
//PC2745T/
//PC2746T
//PC2745TB///PC2746TB
//PC2745T///PC2746T.
2745T
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ALC 887
Abstract: No abstract text available
Text: DC-50 GHz Variable Attenuator HMMC-1015 Features • Specified Frequency Range: DC-26.5 GHz • Pin -1dB : 27 dBm @ 500 MHz • Return Loss: 10 dB • Minimum Attenuation: 2.0 dB • Maximum Attenuation: 30.0 dB Description The HMMC-1015 is a monolithic, voltage variable, GaAs
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DC-50
HMMC-1015
DC-26
HMMC-1015HMMC-1015/rev
ALC 887
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Untitled
Abstract: No abstract text available
Text: HMMC-1015 DC–50 GHz Variable Attenuator Data Sheet Description The HMMC-1015 is a monolithic, voltage variable, GaAs IC attenuator that operates from DC to 50 GHz. The distributed topology of the HMMC-1015 minimizes the parasitic effects of its series and shunt FETs,
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HMMC-1015
HMMC-1015
5968-4446E
5988-2547EN
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ALC 887
Abstract: HMMC-1015 hmmc 1015
Text: Agilent HMMC-1015 DC–50 GHz Variable Attenuator 1GG7-8008 Data Sheet Features • Specified frequency range: DC to 26.5 GHz • Pin –1 dB : 27 dBm @ 500 MHz • Return loss: 10 dB • Minimum attenuation: 2.0 dB • Maximum attenuation: 30.0 dB Chip size:
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HMMC-1015
1GG7-8008
5989-6202EN
ALC 887
hmmc 1015
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Untitled
Abstract: No abstract text available
Text: DC – 50 GHz Variable Attenuator Technical Data HMMC-1015 Features • Specified Frequency Range: DC – 26.5 GHz • Pin -1dB : 27 dBm @ 500 MHz • Return Loss: 10 dB • Minimum Attenuation: 2.0 dB 1470 x 610 µm (57.9 x 24.0 mils) ±10 µm (±0.4 mils)
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HMMC-1015
5968-4446E
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Die Attach and Bonding Guidelines
Abstract: HMMC-1015 GaAs MMIC ESD, Die Attach and Bonding Guidelines
Text: Agilent HMMC-1015 DC–50 GHz Variable Attenuator Data Sheet Features • Specified Frequency Range: DC–26.5 GHz • Pin -1dB : 27 dBm @ 500 MHz • Return Loss: 10 dB • Minimum Attenuation: 2.0 dB Chip Size: 1470 x 610 µm (57.9 x 24.0 mils) Chip Size Tolerance:
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HMMC-1015
HMMC-1015
5968-4446E
5988-2547EN
Die Attach and Bonding Guidelines
GaAs MMIC ESD, Die Attach and Bonding Guidelines
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nec 16312
Abstract: c1677 PC1678G TRANSISTOR MARKING CODE 1P 6PIN PC1677 UPC1677C PC1677C PC2709T marking code C1E mmic 4327 030 11011
Text: Application Note USAGE AND APPLICATION OF SILICON MEDIUMPOWER HIGH-FREQUENCY AMPLIFIER MMIC µPC1677 to 1679 µPC2708 to 2710 µPC2762/2763 µPC2771/2776 Document No. P12152EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) 1997, 1999 Printed in Japan
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PC1677
PC2708
PC2762/2763
PC2771/2776
P12152EJ2V0AN00
an88-6130
nec 16312
c1677
PC1678G
TRANSISTOR MARKING CODE 1P 6PIN
UPC1677C
PC1677C
PC2709T
marking code C1E mmic
4327 030 11011
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ALC 887
Abstract: 1GG7
Text: Agilent HMMC-1002 DC–50 GHz Variable Attenuator 1GG7-8001 Data Sheet Features • Specified frequency range: DC to 26.5 GHz • Return loss: 10 dB • Minimum attenuation: 2.0 dB • Maximum attenuation: 30.0 dB Chip size: Chip size tolerance: Chip thickness:
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1GG7-8001
5989-6201EN
ALC 887
1GG7
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TPM1919-40
Abstract: No abstract text available
Text: TPM1919-40 PRELIMINARY May 1996 TOSHIBA TPM1919-40 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL CONDITION Ta= 25°C Ì MIN. TYP. 45.0 46.0 dBm 12.0 13.0 dB MAX. UNIT Output Power at 1dB Compression Point Pi dB Power Gain at 1dB Compression Point
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TPM1919-40
170mA
TPM1919-40
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