Contextual Info: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1,7dB MAX. @ f=20GHz NF=2.0dB (MAX.) @ f=24GHz • High Associated Gain: Gas=14dB (MIN.) @ f=20GHz Gas=12dB (MIN.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION

fmm5051

Contextual Info: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)

Contextual Info: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)

150759

Abstract: 110GHZ
Contextual Info: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)

FUJITSU MMIC LNA

Abstract: FMM5701LG lg s12 mmic case styles 26GHz LNA fmm5701
Contextual Info: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.6dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION The FMM5701LG is a LNA MMIC designed for applications in the

diode Free 18-24GHz

Abstract: FMM5701LG FUJITSU MMIC LNA
Contextual Info: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.6dB Typ. @ f=24GHz • High Associated Gain: Gas=13.5dB (Typ.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION The FMM5701LG is a LNA MMIC designed for applications in the

Contextual Info: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)

FMM5701LG

Abstract: 26GHz LNA nf 931 24ghz FMM5701X mmic n1 diode Free 18-24GHz 584 amplifer 584 MMIC microwave databook
Contextual Info: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.7dB MAX. @ f=20GHz NF=2.0dB (MAX.) @ f=24GHz • High Associated Gain: Gas=14dB (MIN.) @ f=20GHz Gas=12dB (MIN.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION

LNA marking D d

Abstract: MARKING GC INFINEON discrete LNA D
Contextual Info: Infineon technologies GaAs MMIC CMY191 Preliminary Data Sheet • Ultralinear Mixer with integrated high IP3\ LNA and LO-Buffer for PCS-CDMA receiver applica­ tions. • Bypass switch for LNA integrated. • Mixer Input IP3 of typical 24 dBm. • LNA + Mixer mode 3 V; 15 mA;/ = 1.96 GHz; @

RF LNA 10 GHz

Contextual Info: GaAs MMIC CMY 191 Preliminary Data Sheet Ultralinear Mixer with integrated high IP3I LNA and LO-Buffer for PCS-CDMA receiver applications. • Bypass switch for LNA integrated. • Mixer Input IP3 of typical 24 dBm. • LNA + Mixer mode 3 V; 15 mA; f = 1.96 GHz; @

UPC1678

Abstract: UPC1678B
Contextual Info: UPC1678B UPC1678G UPC1678P 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES_ • HIGH OUTPUT POWER:+18 dBm • EXCELLENT FREQUENCY RESPONSE: 1.9 GHz TYP at 3 dB Down • HIGH POWER GAIN: 23 dB TYP at 500 MHz

UPC1678B

Abstract: UPC167 UPC1678
Contextual Info: UPC1678B UPC1678G UPC1678P 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES • HIGH OUTPUT POWER: +18 dBm • EXCELLENT FREQUENCY RESPONSE: 1.9 GHz TYP at 3 dB Down • HIGH POWER GAIN: 23 dB TYP at 500 MHz

Contextual Info: HMMC-1002 DC–50 GHz Variable Attenuator Data Sheet Description The HMMC-1002 is a monolithic, voltage variable, GaAs IC attenuator that operates from DC to 50 GHz. It is fabricated using MWTC’s MMICB process which features an MBE epitaxial layer, backside ground vias,

TC721A

Contextual Info: HMMC-1002 DC–50 GHz Variable Attenuator Data Sheet Description Features The HMMC-1002 is a monolithic, voltage variable, GaAs IC attenuator that operates from DC to 50 GHz. It is fabricated using MWTC’s MMICB process which features an MBE epitaxial layer, backside ground vias, and FET

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS «PC2745TB, //PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The /¿PC2745TB and /¿PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile

2745T

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS //PC2745TB, //PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The //PC2745TB and //PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile

ALC 887

Contextual Info:  DC-50 GHz Variable Attenuator HMMC-1015 Features • Specified Frequency Range: DC-26.5 GHz • Pin -1dB : 27 dBm @ 500 MHz • Return Loss: 10 dB • Minimum Attenuation: 2.0 dB • Maximum Attenuation: 30.0 dB Description The HMMC-1015 is a monolithic, voltage variable, GaAs

Contextual Info: HMMC-1015 DC–50 GHz Variable Attenuator Data Sheet Description The HMMC-1015 is a monolithic, voltage variable, GaAs IC attenuator that operates from DC to 50 GHz. The distributed topology of the HMMC-1015 minimizes the parasitic effects of its series and shunt FETs,

ALC 887

Abstract: HMMC-1015 hmmc 1015
Contextual Info: Agilent HMMC-1015 DC–50 GHz Variable Attenuator 1GG7-8008 Data Sheet Features • Specified frequency range: DC to 26.5 GHz • Pin –1 dB : 27 dBm @ 500 MHz • Return loss: 10 dB • Minimum attenuation: 2.0 dB • Maximum attenuation: 30.0 dB Chip size:

Contextual Info: DC – 50 GHz Variable Attenuator Technical Data HMMC-1015 Features • Specified Frequency Range: DC – 26.5 GHz • Pin -1dB : 27 dBm @ 500 MHz • Return Loss: 10 dB • Minimum Attenuation: 2.0 dB 1470 x 610 µm (57.9 x 24.0 mils) ±10 µm (±0.4 mils)

Die Attach and Bonding Guidelines

Abstract: HMMC-1015 GaAs MMIC ESD, Die Attach and Bonding Guidelines
Contextual Info: Agilent HMMC-1015 DC–50 GHz Variable Attenuator Data Sheet Features • Specified Frequency Range: DC–26.5 GHz • Pin -1dB : 27 dBm @ 500 MHz • Return Loss: 10 dB • Minimum Attenuation: 2.0 dB Chip Size: 1470 x 610 µm (57.9 x 24.0 mils) Chip Size Tolerance:

nec 16312

Abstract: c1677 PC1678G TRANSISTOR MARKING CODE 1P 6PIN PC1677 UPC1677C PC1677C PC2709T marking code C1E mmic 4327 030 11011
Contextual Info: Application Note USAGE AND APPLICATION OF SILICON MEDIUMPOWER HIGH-FREQUENCY AMPLIFIER MMIC µPC1677 to 1679 µPC2708 to 2710 µPC2762/2763 µPC2771/2776 Document No. P12152EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) 1997, 1999 Printed in Japan

ALC 887

Abstract: 1GG7
Contextual Info: Agilent HMMC-1002 DC–50 GHz Variable Attenuator 1GG7-8001 Data Sheet Features • Specified frequency range: DC to 26.5 GHz • Return loss: 10 dB • Minimum attenuation: 2.0 dB • Maximum attenuation: 30.0 dB Chip size: Chip size tolerance: Chip thickness:

TPM1919-40

Contextual Info: TPM1919-40 PRELIMINARY May 1996 TOSHIBA TPM1919-40 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL CONDITION Ta= 25°C Ì MIN. TYP. 45.0 46.0 dBm 12.0 13.0 dB MAX. UNIT Output Power at 1dB Compression Point Pi dB Power Gain at 1dB Compression Point