Untitled
Abstract: No abstract text available
Text: ZXT13P40DE6 SuperSOT4 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 58m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT13P40DE6
OT23-6
OT23-6
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CEM8933A
Abstract: No abstract text available
Text: CEM8933A Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -5.3A, RDS ON = 58mΩ @VGS = -4.5V. RDS(ON) = 98mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
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CEM8933A
CEM8933A
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ZXT13P40DE6TC
Abstract: P40D P-40D
Text: ZXT13P40DE6 SuperSOT4 50V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 58m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT13P40DE6
OT23-6
OT23-6
ZXT13P40DE6TA
ZXT13P40DE6TC
P40D
P-40D
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P40D
Abstract: ZXT13P40DE6 ZXT13P40DE6TA ZXT13P40DE6TC DSA0037469
Text: ZXT13P40DE6 SuperSOT4 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 58m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT13P40DE6
OT23-6
OT23-6
P40D
ZXT13P40DE6
ZXT13P40DE6TA
ZXT13P40DE6TC
DSA0037469
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MGSF3442X
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442V Motorola Preffered Device Preliminary Information Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET PR EL IM IN AR Y rDS(0N) =58mΩ (TYP)
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MGSF3442V
MGSF3442X
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greenline portfolio
Abstract: MGSF3442X
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442X Motorola Preffered Device Preliminary Information Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET PR EL IM IN AR Y rDS(0N) =58mΩ (TYP)
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MGSF3442X
greenline portfolio
MGSF3442X
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s2dg1
Abstract: No abstract text available
Text: CEG8304 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -3.6A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability.
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CEG8304
s2dg1
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AOP601
Abstract: AOP601L
Text: AOP601 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS = -4.5V) Schottky VDS=30V, I F=3A, VF<0.5V@1A
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AOP601
AOP601
AOP601L
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29a65
Abstract: CET4401
Text: CET4401 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -5.6A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package.
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CET4401
OT-223
OT-223
29a65
CET4401
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CEM4953A
Abstract: No abstract text available
Text: CEM4953A Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 5 -30V, -4.5A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
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CEM4953A
CEM4953A
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CEM4953A
Abstract: No abstract text available
Text: CEM4953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.5A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
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CEM4953A
CEM4953A
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M4680
Abstract: AOP600 AOP600L
Text: AOP600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (V GS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS =- 4.5V) The AOP600 uses advanced trench technology to
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AOP600
AOP600
AOP600L
Absolute150
M4680
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AOP604
Abstract: No abstract text available
Text: AOP604 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28mΩ < 35mΩ (VGS = -10V) < 43mΩ < 58mΩ (VGS = -4.5V) Schottky VDS=30V, IF=3A, VF<0.5V@1A
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AOP604
AOP604
AOP604L
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cem4955
Abstract: No abstract text available
Text: CEM4955 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.5A, RDS ON = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
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CEM4955
cem4955
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)
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ELM34608AA-N
ELM34608AA-N
P5806NVG
Oct-01-2004
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SEM 2004
Abstract: P5806NVG
Text: P5806NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 60 58mΩ 4.5A P-Channel -60 90mΩ -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
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P5806NVG
Oct-01-2004
SEM 2004
P5806NVG
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM35600KA-S •General Description ■Features ELM35600KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)
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ELM35600KA-S
ELM35600KA-S
P5806ND5G
O-252-5
MAY-23-2005
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM34608AA-N •General Description ■Features ELM34608AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=60V Id=4.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 85mΩ(Vgs=4.5V)
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ELM34608AA-N
ELM34608AA-N
P5806NVG
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cem8958a
Abstract: spf-90
Text: CEM8958A Dual Enhancement Mode Field Effect Transistor N and P Channel PRELIMINARY FEATURES 5 30V, 6.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).
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cem8958a
spf-90
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Untitled
Abstract: No abstract text available
Text: Complementary MOSFET ELM36601EA-S •General Description ■Features ELM36601EA-S uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • N-channel P-channel Vds=30V Id=3.5A Rds(on) < 58mΩ(Vgs=10V) Rds(on) < 88mΩ(Vgs=4.5V)
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ELM36601EA-S
ELM36601EA-S
P5803NAG
APR-03-2006
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DTG110B
Abstract: TO36 package pnp germanium to36 TO41 package Germanium DTG-2400 DTG600 2N2081A TO41 DTG2400
Text: POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (Hz) r •CBO Max Max (A) (8) (CE)sat •Oper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .
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2N2082
2N2082A
DTG2000
MP1550
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2N1031
MP1554
MP1558
2N1032
2N3124
DTG110B
TO36 package
pnp germanium to36
TO41 package
Germanium
DTG-2400
DTG600
2N2081A
TO41
DTG2400
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028A5
Abstract: MSP90 2SC5220 2SC550 BLY95 MSP40 MHT4513 2SC5240 BLY80 STC7644
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
13On0
2SC5250t
2SC525Rt
2SC550
400MS
20MSA
028A5
MSP90
2SC5220
BLY95
MSP40
MHT4513
2SC5240
BLY80
STC7644
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MSP90
Abstract: D28A12 2sc910 cross 028A5 MHT4515 B3616 B3617 B3749 D28A5 D28A6
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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NPN110.
USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
MSP90
D28A12
2sc910 cross
028A5
MHT4515
B3616
B3617
B3749
D28A5
D28A6
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028A5
Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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