agilent n3300A
Abstract: N3303
Text: Programming Guide Agilent Technologies DC Electronic Loads Models N3300A, N3301A, N3302A, N3303A N3304A, N3305A, N3306A, and N3307A Part No. 5964-8198 Microfiche No 5964-8199 Printed in Malaysia March, 2002 Safety Summary The beginning of the electronic load User’s Guide has a Safety Summary page. Be sure you are familiar
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N3300A,
N3301A,
N3302A,
N3303A
N3304A,
N3305A,
N3306A,
N3307A
N3307A
agilent n3300A
N3303
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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m1a transistor smd
Abstract: SMD M1A 5964 fet MC-5963 P12331EJ1V0DS00 m1a smd
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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MT3S111P
Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287
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2SC941TM
2SC3136
TIM7179-45SL
TIM7179-60SL
TIM7785-4SL
TIM7785-4UL
TIM7785-6UL
TIM7785-8SL
TIM7785-8UL
TIM7785-12UL
MT3S111P
2SC3136
2SC4250FV
TIM0910-8
TA4029CTC
tim8996-30
TA4029
TMD1925-3
2SC5066
3SK293
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MGFS45H2201G
Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety
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H-CR587-J
KI-0612
MGFS45H2201G
MGFS40H2201G
MGF0909A
sirio
mgfc36v-a
QVC12
MGF1907A
MGF4961
mgf4941al
mitsubishi mgf
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MT4S300T
Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors
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2010/9SCE0004K
2SC1923
MT4S300T
TGI0910-50
MT3S111P
2SC3136
S8850AF
TA4032FT
MT4S300U
VHF-UHF Band oscillator
2sc5108
MT4S301T
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2sc5066
Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs
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SCE0004I
2SC380TM
2sc5066
MT3S111P
MT3S111
toshiba transistors catalog
TIM4450-4UL
TGI1314-50L
MT3S106
MT4S200T
X-band low noise amplifiers toshiba
2SC3136
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RFM70U12D
Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック
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SCJ0004N
2SC2714
2SC2715
2SC2716
2SC3123
2SC5064
2SC5084
2SC5089
2SC5094
2SC5106
RFM70U12D
2SC3136
rfm03u3ct
2SK709
RFM70U12
MT3S106
MT3S111
MT3S111P
tim4450
tpm1919
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 38V 5964 5 .9 ~ 6 .4 G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 38V 5964 is an internally im pedance-matched GaAs power FET especially designed fo r use in 5 .9 — 6 .4 GHz band amplifiers. The hermetically sealed metal-ceramic
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT MC-5963, MC-5964 800 M TO 900 MHz-BAND POWER AMPLIFIER FOR THE ANALOG HAND-HELD PHONE FOR AMPS, E-TACS DESCRIPTION The MC-5963, 5964 are 800 to 900 MHz band GaAs Multi-chip IC’s which were developed for digital Cellular
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MC-5963,
MC-5964
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MC-5* NEC
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT MC-5963, MC-5964 800 M TO 900 MHz-BAND POWER AMPLIFIER FOR THE ANALOG HAND-HELD PHONE FOR AMPS, E-TACS DESCRIPTION The MC-5963, 5964 are 800 to 900 MHz band GaAs Multi-chip IC’s which were developed for digital Cellular
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MC-5963,
MC-5964
MC-5* NEC
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Z5964-4
Abstract: Z5964-8D 1084 1016 dL z5964-4d Z5964-15 Z5964 5964-8D
Text: N E Z5964-15D N E Z5964-15D L N E Z5964-8D N E Z 5964-8D L N E Z5964-4D N E Z 5964-4D L C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • HIGH OUTPUT POWER AND EFFICIENCY vs. INPUT POWER P out 18W 42.5 dBm Typ P idB for NEZ5964-15D/15DL 9W (39.5 dBm) Typ P idB for NEZ5964-8D/8DL
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Z5964-15D
Z5964-8D
5964-8D
Z5964-4D
5964-4D
NEZ5964-15D/15DL
NEZ5964-8D/8DL
NEZ5964-4D/4DL
-15DL
Z5964-4
1084 1016 dL
Z5964-15
Z5964
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MGFC36V5964
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 36V 5964 p 'o d u c,i° " P'a" d lS C O B t W 5 .9 ' 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V5964 is an internally impedance-matched GaAs power F E T especially designed for use in 5.9 ~ 6.4
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MGFC36V5964
Item-01:
Item-51:
27C102P,
RV-15
16-BIT)
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FLM5964-8C
Abstract: No abstract text available
Text: F I M 5964-HC Internally Matched Power ìaAs E E l s ABSOLUTE MAXIMUM RATING (Am bient Temperature Ta=25°C Item Symbol Condition Drain-Source Voltage vds Gate-Source Voltage VGS Tc = 25°C Total Power Dissipation Pt Storage Temperature Tstg Channel Temperature
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5964-HC
10OiL
2200mA
31dBm
27dBm
23dBm
FLM5964-8C
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Fujitsu FLM 150
Abstract: 5964-6D
Text: FLM 5964-6D Internally Matched Power CiaAs I 'E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 31.2 w °c Total Power Dissipation Tc = 25°C pt Storage Temperature
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5964-6D
Voltag50
26dBm
24dBm
22dBm
Fujitsu FLM 150
5964-6D
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Untitled
Abstract: No abstract text available
Text: FLM 5964 12DA - Internally Matched Power ìaAs F ET s ABSOLUTE MAXIMUM RATING (A m bient Tem perature Ta=25°C Hem SymlxM Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 57.6 w Total Power D issipation pt Tc = 25°C Storage Temperature
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28dBm
26dBm
24dBm
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5964 fet
Abstract: C44V5964
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 44V 5964 5 .9 ~ 6 .4 G H z BAND 2 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAW ING The M G F C 4 4 V 5 9 6 4 is an internally impedance-matched Unit: millimeters inches GaAs power F E T especailly designed fo r use in 5 .9 ~ 6.4
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 5964 5 .9 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F C 4 0 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especially designed for use in 5 . 9 — 6 . 4 20.4 ± 0 . 2 0 .8 0 3 ± 0 . 0 0 8
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27C102P,
RV-15
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 44V 5964 5 . 9 —6 .4 G H z BAND 2 4 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION OUTLINE D R A W IN G The M G F C 4 4 V 5 9 6 4 is an internally impedance-matched Unit: millimeters inches GaAs power F E T especailly designed for use in 5.9 ~ 6.4
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x band Gaas Power Amplifier 10W
Abstract: MGFC40V5964 pir 5 r0049 my fet
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 5964 5 . 9 —6 .4 G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especially designed fo r use in 5 . 9 — 6 . 4 G H z band amplifiers. The herm etically sealed metal-ceramic
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MGFC40V5964
MGFC40V5964
ltem-01:
ltem-51
x band Gaas Power Amplifier 10W
pir 5
r0049
my fet
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C38V5964
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 38V 5964 5 .9 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 3 8 V 5 9 6 4 is a n in te rn a lly im p e d a n c e -m a tc h e d GaAs p o w e r F E T especially designed fo r use in 5 . 9 - 6 . 4
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C38V5964
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 38V 5964 5 .9 —6.4G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 3 8 V 5 9 6 4 is a n in te rn a lly im p e d a n c e -m a t c h e d G aA s p o w e r F E T es p ec ially designed fo r use in 5 . 9 — 6 . 4
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C42V5964
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964 S .9 —6.4G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especailly designed fo r use in 5.9 ~ 6.4 GH z band amplifiers. The herm etically sealed metal-ceramic
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MGFC42V5964
C42V5964
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MGF-C34M
Abstract: No abstract text available
Text: MITSUBISHI {DISCRETE SC> tí dF | b s t m a T aoioiaa i MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC34M5964 FOR M ICROW AVE PO W ER A M P L IF IE R S IN TER N A LLY MATCHED Soroe P 1 6 2 49 82 9 MITSUBISHI DISCRETE SC 9 1D 1 0 1 22 D T-tf-Ol D ESCRIPTION T h e M G F C 3 4 M 5 9 6 4 is an internally im pedance m atched
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MGFC34M5964
MGF-C34M
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