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    5A 800V Search Results

    5A 800V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CR2AS-16A-T13#B00 Renesas Electronics Corporation 800V - 2A - Thyristor Low Power Use Visit Renesas Electronics Corporation
    CR03AM-16A-B#BD0 Renesas Electronics Corporation 800V-0.3A-Thyristor Low Power Use Visit Renesas Electronics Corporation
    CR12CS-16B-T2#BH0 Renesas Electronics Corporation 800V-12A-Thyristor Medium Power Use Visit Renesas Electronics Corporation
    CR12CS-16B#BH0 Renesas Electronics Corporation 800V-12A-Thyristor Medium Power Use Visit Renesas Electronics Corporation
    CR03AM-16A-A2#B00 Renesas Electronics Corporation 800V-0.3A-Thyristor Low Power Use Visit Renesas Electronics Corporation
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    5A 800V Price and Stock

    Vishay Intertechnologies S2K-E3/52T

    Rectifiers 2.0 Amp 800 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI S2K-E3/52T Reel 190,500 750
    • 1 -
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    • 100 -
    • 1000 $0.0376
    • 10000 $0.0376
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    Vishay Intertechnologies GBPC3508-E4/51

    Bridge Rectifiers 35 Amp 800 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI GBPC3508-E4/51 Bulk 65,100 100
    • 1 -
    • 10 -
    • 100 $3.03
    • 1000 $2.69
    • 10000 $2.69
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    Vishay Intertechnologies W08G-E4/51

    Bridge Rectifiers 1.5 Amp 800 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI W08G-E4/51 Bulk 34,600 100
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    • 10 -
    • 100 $0.202
    • 1000 $0.198
    • 10000 $0.189
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    Vishay Intertechnologies GBPC2508W-E4/51

    Bridge Rectifiers 25 Amp 800 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI GBPC2508W-E4/51 Bulk 34,224 3
    • 1 -
    • 10 $2.42
    • 100 $2.42
    • 1000 $2.42
    • 10000 $2.42
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    Vishay Intertechnologies GSIB2580-E3/45

    Bridge Rectifiers 800 Volt 25 Amp 350 Amp IFSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI GSIB2580-E3/45 Tube 30,260 20
    • 1 -
    • 10 -
    • 100 $1.22
    • 1000 $0.96
    • 10000 $0.96
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    Find more 5A 800V price and stock on Findchips.com

    5A 800V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DC-2000

    Abstract: STP5NB80 STP5NB80FP
    Text: STP5NB80 STP5NB80FP N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP5NB80 STP5NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 2.2 Ω < 2.2 Ω 5A 5A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STP5NB80 STP5NB80FP O-220/TO-220FP DC-2000 STP5NB80 STP5NB80FP PDF

    Untitled

    Abstract: No abstract text available
    Text: STP5NB80 STP5NB80FP N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP5NB80 STP5NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 2.2 Ω < 2.2 Ω 5A 5A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STP5NB80 STP5NB80FP O-220/TO-220FP PDF

    STP5NB100

    Abstract: STP5NB100FP AC to DC smps circuit diagram schematic diagram smps supply SWITCHING WELDING SCHEMATIC BY MOSFET
    Text: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STP5NB100 STP5NB100FP O-220/TO-220FP STP5NB100 STP5NB100FP AC to DC smps circuit diagram schematic diagram smps supply SWITCHING WELDING SCHEMATIC BY MOSFET PDF

    STP5NB100FP

    Abstract: STP5NB100
    Text: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STP5NB100 STP5NB100FP O-220/TO-220FP STP5NB100FP STP5NB100 PDF

    STP5NB100

    Abstract: STP5NB100FP
    Text: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STP5NB100 STP5NB100FP O-220/TO-220FP STP5NB100 STP5NB100FP PDF

    ERC20M

    Abstract: No abstract text available
    Text: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability


    Original     		ERC20M SC-67 ERC20M PDF

    dd 22 s 800

    Abstract: STB5NB80
    Text: STB5NB80 N - CHANNEL 800V - 1.8Ω - 5A - D2PAK PowerMESH MOSFET TYPE V DSS R DS on ID STB5NB80 800 V < 2.2 Ω 5A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		STB5NB80 dd 22 s 800 STB5NB80 PDF

    power Diode 800V 5A

    Abstract: ERC20M
    Text: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability


    Original     		ERC20M SC-67 ERC20M power Diode 800V 5A PDF

    power Diode 800V 5A

    Abstract: diode 5A 800V
    Text: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability


    Original     		ERC20M SC-67 ERC20M power Diode 800V 5A diode 5A 800V PDF

    Untitled

    Abstract: No abstract text available
    Text: R8005ANJ Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source


    Original     		R8005ANJ SC-83) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: YG226S8 5A (800V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design


    Original     		YG226S8 13Min SC-67 PDF

    Untitled

    Abstract: No abstract text available
    Text: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		R8005ANX O-220FM R1102A PDF

    power Diode 800V 5A

    Abstract: No abstract text available
    Text: YG226S8 5A (800V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design


    Original     		YG226S8 13Min SC-67 power Diode 800V 5A PDF

    Untitled

    Abstract: No abstract text available
    Text: STB5NB80 N - CHANNEL 800V - 1.8Ω - 5A - D2PAK PowerMESH MOSFET TYPE V DSS R DS on ID STB5NB80 800 V < 2.2 Ω 5A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STB5NB80 O-263 PDF

    ERC20

    Abstract: No abstract text available
    Text: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ


    Original     		ERC20 O-220AB SC-46 ERC20 PDF

    power Diode 800V 5A

    Abstract: No abstract text available
    Text: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ


    Original     		ERC20 O-220AB SC-46 ERC20 power Diode 800V 5A PDF

    d400 e

    Abstract: power Diode 800V 5A
    Text: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ


    Original     		ERC20 O-220AB SC-46 te-04 ERC20 d400 e power Diode 800V 5A PDF

    ERC20

    Abstract: No abstract text available
    Text: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ


    Original     		ERC20 O-220AB SC-46 ERC20 PDF

    2SC3927

    Abstract: DSA0016508
    Text: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 5 A VCE(sat) IC=5A, IB=1A 0.5max PC


    Original     		2SC3927 MT-100 100max 550min Pulse15) 105typ 2SC3927 DSA0016508 PDF

    2SC4557

    Abstract: No abstract text available
    Text: 2SC4557 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 28 A VCE(sat) IC=5A, IB=1A 0.5max 80(Tc=25°C)


    Original     		2SC4557 100max 550min Pulse20) 105typ FM100 2SC4557 PDF

    2SC4557

    Abstract: No abstract text available
    Text: 2SC4557 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 10(Pulse20) A hFE V 5 A VCE(sat) IC=5A, IB=1A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=5A, IB=1A


    Original     		2SC4557 100max Pulse20) 550min 105typ 50eristics FM100 2SC4557 PDF

    TM583S-L

    Abstract: TM583S tm583sl triac 800V 1A triac 1500v
    Text: TO-220F 5A Triac TM583S-L • Features External Dimensions ●Gate trigger current: IGT =20mA max MODE , , 13.0 min ●Isolation voltage: VISO=1500V (50Hz Sine wave, RMS) 0.2 0.2 3.9± 0.8± 0.3 16.9± 0.2 8.4± ●RMS on-state current: I T(RMS) =5A 10.0


    Original     		O-220F TM583S-L TM583S-L TM583S tm583sl triac 800V 1A triac 1500v PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5UM-16A HIGH-SPEED SWITCHING USE FS5UM-16A • VOSS . 800V • TDS ON (MAX) . 2 .3 ÎÎ • I D . 5A


    OCR Scan     		FS5UM-16A PDF

    diode 1000V 10a

    Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
    Text: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A


    OCR Scan     		O-220AB O-220AB 750ns BU407 BUV28 BUV28A BUV27 BUV27A diode 1000V 10a 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV PDF