FCX1051A
Abstract: FCX1151A DSA003684
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;
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FCX1151A
FCX1051A
100ms
FCX1051A
FCX1151A
DSA003684
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;
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FCX1151A
FCX1051A
100ms
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Marking P35
Abstract: transistor p35 Marking P35 sot89 SOT89 transistor marking 5A DPLS350Y Diodes P35
Text: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V IC = -3A High Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound ICM up to -5A Peak Pulse Current
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DPLS350Y
-180mV
AEC-Q101
J-STD-020
MIL-STD-202,
DS31149
Marking P35
transistor p35
Marking P35 sot89
SOT89 transistor marking 5A
DPLS350Y
Diodes P35
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TS16949
Abstract: ZXTN25020DZ ZXTP25020DZ ZXTP25020DZTA SOT89 transistor marking 5A
Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP
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ZXTP25020DZ
-65mV
ZXTN25020DZ
D-81541
TS16949
ZXTN25020DZ
ZXTP25020DZ
ZXTP25020DZTA
SOT89 transistor marking 5A
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Untitled
Abstract: No abstract text available
Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP
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ZXTP25020DZ
-65mV
ZXTN25020DZ
D-81541
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SOT89 transistor marking 851
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V Case: SOT89 IC = 5A High Continuous Current Case Material: Molded Plastic. “Green” Molding Compound.
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ZXTN2010Z
J-STD-020
ZXTP2012Z
MIL-STD-202,
DS33661
SOT89 transistor marking 851
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Untitled
Abstract: No abstract text available
Text: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V IC = -3A High Continuous Collector Current ICM up to -5A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE sat < -180mV @ 1A
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DPLS350Y
-180mV
AEC-Q101
J-STD-020
DS31149
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TS16949
Abstract: ZXTN25040DZ ZXTN25040DZTA ZXTP25040DZ ZXTN
Text: ZXTN25040DZ 40V, SOT89, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 2.4W Complementary part number ZXTP25040DZ Description C Packaged in the SOT89 outline this new low saturation 40V NPN
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ZXTN25040DZ
ZXTP25040DZ
D-81541
TS16949
ZXTN25040DZ
ZXTN25040DZTA
ZXTP25040DZ
ZXTN
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2DD2098
Abstract: KP3Q 4A SOT89 MARKING CODE
Text: 2DB1386Q/R 20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -20V IC = -5A high Continuous Current Low saturation voltage VCE sat < -1V @ -4A Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0
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2DB1386Q/R
2DD2098
AEC-Q101
J-STD-020
MIL-STD-202,
DS31147
KP3Q
4A SOT89 MARKING CODE
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transistor marking 6A
Abstract: ZXTN2010Z ZXTN2010ZTA
Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various
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ZXTN2010Z
transistor marking 6A
ZXTN2010Z
ZXTN2010ZTA
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MARKING 851
Abstract: SOT89 MARKING CODE 5A SOT89 transistor marking 851
Text: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 60V High current capability Max Continuous Current IC = 5A
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ZXTN2010Z
ZXTP2012Z
AEC-Q101
J-STD-020
ZXTN2010Z
DS33661
MARKING 851
SOT89 MARKING CODE 5A
SOT89 transistor marking 851
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Untitled
Abstract: No abstract text available
Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various
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ZXTN2010Z
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npn 120v 10a transistor
Abstract: ZX5T851Z ZX5T851ZTA
Text: ZX5T851Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC
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ZX5T851Z
npn 120v 10a transistor
ZX5T851Z
ZX5T851ZTA
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ZXTN2010ZTA
Abstract: ZXTN2010Z 0019E
Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various
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ZXTN2010Z
ZXTN2010ZTA
ZXTN2010Z
0019E
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AZ1084T
Abstract: AZ1084T-ADJE1 AZ1084T-ADJ AZ1084
Text: Product Brief VOLTAGE 5A LOW DROPOUT DETECTOR LINEAR REGULATOR Description AZ70XX AZ1084 Parametric Table The AZ1084 isseries a series dropout positive voltage The AZ70XX ICs of arelow under voltage detectors with regulators with a maximum dropout of 1.5V
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AZ70XX
AZ1084
AZ70XXis
AZ1084
AZ70XX
providesAZ70XX
OT-89-3
AZ1084T
AZ1084T-ADJE1
AZ1084T-ADJ
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ZXTN25060BZTA
Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
Text: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in
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ZXTN25060BZ
D-81541
ZXTN25060BZTA
TS16949
ZXTN25060BZ
SOT89 transistor marking 5A
marking 1c7
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TSB1386
Abstract: TSB1386CP TSB1386CY
Text: TSB1386 Low Frequency PNP Transistor BVCEO = - 20V Ic = - 5A VCE SAT , = - 0.35V(typ.) @Ic / Ib = - 4A / - 0.1A Pin assignment: 1. Base 2. Collector 3. Emitter Features Ordering Information Low VCE (SAT). Part No. Excellent DC current gain characteristics
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TSB1386
TSB1386CP
TSB1386CY
O-252
OT-89
OT-89
TSB1386
TSB1386CP
TSB1386CY
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SOT89 transistor marking 5A
Abstract: 2SB1386R marking BHR SOT89 transistor marking 4A 2SB1386 2SD2098 2SB1386-R bhr sot-89 marking BHp SOT-23
Text: 2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Low VCE sat Excellent DC current gain characteristics Complements the 2SD2098 4 1 2
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2SB1386
OT-89
2SD2098
2SB1386-P
2SB1386-Q
2SB1386-R
-50mA,
30MHz
10-Dec-2010
SOT89 transistor marking 5A
2SB1386R
marking BHR
SOT89 transistor marking 4A
2SB1386
2SD2098
2SB1386-R
bhr sot-89
marking BHp SOT-23
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mosfet vgs 5v 5a
Abstract: SGM2306A power mosfet 5a 20v
Text: SGM2306A 5A, 30V,RDS ON 35mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SOT-89 The SGM2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
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SGM2306A
OT-89
SGM2306A
01-Jun-2002
mosfet vgs 5v 5a
power mosfet 5a 20v
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V APPLICATIONS
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2SD965/A
2SD965:
2SD965A:
2SD965G-x-AB3-R
OT-89
2SD965L-x-T92-B
2SD965G-x-T92-B
2SD965L-x-T92-K
2SD965G-x-T92-K
2SD965L-x-TN3-R
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2SD965
Abstract: 2SD965AL 2SD965A 2sd965l 2sd965 transistor sot 89 2sd965 2SD965AG
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V APPLICATIONS
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2SD965/A
2SD965:
2SD965A:
2SD965L/2SD965AL
2SD965G/2SD965AG
2SD965-x-AB3-R
2SD965-x-T92-B
2SD965-x-T92-K
2SD965-x-TN3-R
2SD965A-x-AB3-R
2SD965
2SD965AL
2SD965A
2sd965l
2sd965 transistor
sot 89 2sd965
2SD965AG
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2SD965AL-AB3-R
Abstract: 2SD965 2sd965 transistor 2sd965l ab3r sot 89 2sd965
Text: UNISONIC TECHNOLOGIES CO.,LTD. 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES 1 * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A : Collector-Emitter voltage up to 30 V SOT-89
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2SD965/A
2SD965
2SD965A
OT-89
2SD965L/2SD965AL
2SD965-AB3-R
2SD965L-AB3-R
2SD965A-AB3-R
2SD965AL-AB3-R
OT-89
2SD965
2sd965 transistor
2sd965l
ab3r
sot 89 2sd965
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SOT89 transistor marking 5A
Abstract: BTC5103M3 MARKING 5A SOT-89
Text: CYStech Electronics Corp. Spec. No. : C651M3 Issued Date : 2003.11.07 Revised Date : Page No. : 1/4 NPN Epitaxial Planar Transistor BTC5103M3 Features • High IC, IC DC =5A • Low VCE(sat), 0.3V typically • Good current gain linearity Symbol Outline BTC5103M3
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C651M3
BTC5103M3
OT-89
UL94V-0
SOT89 transistor marking 5A
BTC5103M3
MARKING 5A SOT-89
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Am ps Extrem ely Low Saturation Voltage E.g. 60mv Typ. Extrem ely Low Equivalent On-resistance;
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OCR Scan
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FCX1151A
FCX1051A
-50mA,
50MHz
-20mA,
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