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    5B1 SOT 23 Search Results

    5B1 SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    5B1 SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5B1 SOT23

    Abstract: 5B1 SOT-23 sot23 marking 5c1 marking 5b1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16LT1 DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC807-16LT1 LBC807-16LT1G 5A1 SOT-23 5B1 SOT-23 5B1 Pb-Free LBC807-40LT1 LBC807-40LT1G


    Original     		PDF LBC807-16LT1 LBC807-16LT1G OT-23 LBC807-40LT1 LBC807-40LT1G LBC807-25LT1 LBC807-25LT1G 5B1 SOT23 5B1 SOT-23 sot23 marking 5c1 marking 5b1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    5B1 SOT-23

    Abstract: BC807 marking 351 sot23 5B1 SOT23 BC807-40LT1 5C MARKING CODE SOT23 5B1 SOT 23
    Text: BC807-16LT1, BC807-25LT1, BC807-40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Packages are Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO −45 V Collector - Base Voltage


    Original     		PDF BC807-16LT1, BC807-25LT1, BC807-40LT1 OT-23 BC807-16LT1) BC807-25LT1) BC807-40LT1) 5B1 SOT-23 BC807 marking 351 sot23 5B1 SOT23 5C MARKING CODE SOT23 5B1 SOT 23

    5C1 SOT-23

    Abstract: sot23 marking 5c1 LBC80725LT3G marking 5b1 5B1 sot23 marking 5a1 sot23 LBC807-40LT3G LBC807-25 LBC807-16LT1G LBC807-16LT3G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape 5C1 SOT-23 sot23 marking 5c1 LBC80725LT3G marking 5b1 5B1 sot23 marking 5a1 sot23 LBC807-40LT3G LBC807-25 LBC807-16LT1G LBC807-16LT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: BC807-16L, SBC807­16L BC807-25L, SBC807­25L, BC807-40L, SBC807-40L General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF BC807-16L, SBC807 BC807-25L, BC807-40L, SBC807-40L BC807â 16LT1/D

    Transistors 5A1 8

    Abstract: SBC80-16L marking 5a1 5B1 SOT-23 BC807 5C
    Text: BC807-16L, SBC807­16L BC807-25L, SBC807­25L, BC807-40L, SBC807-40L General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique


    Original     		PDF BC807-16L, SBC80716L BC807-25L, SBC80725L, BC807-40L, SBC807-40L AEC-Q101 OT-23 BC807-16LT1/D Transistors 5A1 8 SBC80-16L marking 5a1 5B1 SOT-23 BC807 5C

    5B1 SOT-23

    Abstract: LBC807-16LT1G LBC807-16LT3G LBC807-25LT1G LBC807-40LT1G LBC807-40LT3G sot23 marking 5c1 Transistors 5A1 J
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape 5B1 SOT-23 LBC807-16LT1G LBC807-16LT3G LBC807-25LT1G LBC807-40LT1G LBC807-40LT3G sot23 marking 5c1 Transistors 5A1 J

    5B1 SOT-23

    Abstract: MARKING CODE 5B1 5B1 SOT23-3 BC807-40LT1 AI mm sot 25 SOT-23 Package onsemi BC807
    Text: BC807−16LT1, BC807−25LT1, BC807−40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Packages are Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO −45 V Collector - Base Voltage


    Original     		PDF BC807-16LT1, BC807-25LT1, BC807-40LT1 BC807-16LT1/D 5B1 SOT-23 MARKING CODE 5B1 5B1 SOT23-3 BC807-40LT1 AI mm sot 25 SOT-23 Package onsemi BC807

    marking 5b1

    Abstract: On semiconductor date Code sot-23 BC807 BC80740LT1G 5B1 SOT-23 BC807-1 sot-23 Marking B1
    Text: BC807−16LT1, BC807−25LT1, BC807−40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 V Collector − Base Voltage


    Original     		PDF BC807-16LT1, BC807-25LT1, BC807-40LT1 BC807-16LT1/D marking 5b1 On semiconductor date Code sot-23 BC807 BC80740LT1G 5B1 SOT-23 BC807-1 sot-23 Marking B1

    BC807-40LT1G

    Abstract: BC807 BC807-16LT1G BC807-25LT1G
    Text: BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit


    Original     		PDF BC807-16LT1G, BC807-25LT1G, BC807-40LT1G BC807-16LT1/D BC807-40LT1G BC807 BC807-16LT1G BC807-25LT1G

    marking code 5b1

    Abstract: 5B1 SOT-23 BC807 5c sot-23 sot-23 Marking B1 marking b1 sot-23
    Text: BC807−16LT1, BC807−25LT1, BC807−40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 V Collector − Base Voltage


    Original     		PDF BC807-16LT1, BC807-25LT1, BC807-40LT1 BC807-16LT1/D marking code 5b1 5B1 SOT-23 BC807 5c sot-23 sot-23 Marking B1 marking b1 sot-23

    zener 4B7

    Abstract: 5B1 SOT-23 zener 5B1 5B1 zener diode marking 24b sot-23 6b2 zener diode 6b2 zener zener 6b8 28b sot23 5c sot-23
    Text: 1. DATA SHEET BZX84B SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.3 - 39 Volts POWER 410 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .056(1.40) • Ideally Suited for Automated Assembly Processes .103(2.60) • Pb free product are available : 99% Sn above can meet Rohs


    Original     		PDF BZX84B 410mW MIL-STD-202G, OT-23, zener 4B7 5B1 SOT-23 zener 5B1 5B1 zener diode marking 24b sot-23 6b2 zener diode 6b2 zener zener 6b8 28b sot23 5c sot-23

    Untitled

    Abstract: No abstract text available
    Text: 1. DATA SHEET BZX84B SERIES SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 4.3 - 39 Volts POWER 410 mWatts SOT- 23 Unit: inch mm FEATURES .119(3.00) .110(2.80) .056(1.40) • Ideally Suited for Automated Assembly Processes .103(2.60) • Both normal and Pb free product are available :


    Original     		PDF BZX84B 410mW MIL-STD-202G, OT-23,

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G PNP Silicon FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G LBC807 AEC-Q101

    LBC80725LT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G S-LBC807-16LT1G S-LBC807-25LT1G S-LBC807-40LT1G LBC807 AEC-Q101 3000/Tape LBC80725LT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 AEC-Q101 S-LBC807-16LT1G LBC807-16LT3G S-LBC807-16LT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    BC807-40LT1G equivalent

    Abstract: bc807 BC807-16LT1G BC807-25LT1G BC807-40LT1G BC80740LT1G 5B1 SOT-23
    Text: BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit


    Original     		PDF BC807-16LT1G, BC807-25LT1G, BC807-40LT1G BC807-16LT1/D BC807-40LT1G equivalent bc807 BC807-16LT1G BC807-25LT1G BC807-40LT1G BC80740LT1G 5B1 SOT-23

    lN5401

    Abstract: 4B20Y 4B10Y 4B40Y 1n4953 ln5400 E100S2 1N1088 PX4A01 1N3231
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A VRRM IFSM (V) (A) Silicon Rectifiers, 10 1N5179 1N4512 1N415S 1N4953 BAT18 S218 5 1.0m 10m 100m 100m 100m 100m 10 15 BAQ33 BAQ34 1N458B 1N5194 OR50 BAQ35 BAY135 1N5195 1N519S OR25 ~:s120 20


    Original     		PDF 1N5179 1N4512 1N415S 1N4953 BAT18 01FSO 01NSO 1N4005 1N4005L 1N3251 lN5401 4B20Y 4B10Y 4B40Y ln5400 E100S2 1N1088 PX4A01 1N3231

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    010530b

    Abstract: 10B1 10B2 10B3 11B1 11B3 16B1 16B2 17B1 SN74CBT16214
    Text: SN74CBT16214 3-T0-1 BUS-SELECT SWITCH S C D S 008G - MAY 1993 - R EVISED A U G U S T 1996 * 5-Q Switch Connection Between Two Ports 1 • TTL-Compatible Input and Output Levels • Package Options Include Plastic Thin Shrink Small-Outline DGG and 300-mil


    OCR Scan     		PDF SN74CBT16214 SCDS008G 300-mil SN74CBT16214 12-bit 010530b 10B1 10B2 10B3 11B1 11B3 16B1 16B2 17B1

    Untitled

    Abstract: No abstract text available
    Text: SN74CBT16212A 24-BIT FET BUS-EXCHANGE SWITCH SCDS0Q7K - NOVEMBER 1992 - REVISED MARCH 1998 5-Q Switch Connection Between Two Ports TTL-Compatible Input Levels Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds 2000 V Per MIL-STD-833, Method 3015; Exceeds 200 V


    OCR Scan     		PDF SN74CBT16212A 24-BIT MIL-STD-833, 300-mil

    J12B2

    Abstract: No abstract text available
    Text: SN74CBT16212A 24-BIT 12-BIT 4-PORT FET BUS-EXCHANGE SWITCH SCDS007J - NOVEMBER <992 - REVISED DECEMBER 1997 L _ • I I I I • • • • • 5-iî Switch Connection Between Two Ports TTL-Compatible Input Levels Latch-Up Performance Exceeds 250 mA Per


    OCR Scan     		PDF SCDS007J SN74CBT16212A 24-BIT 12-BIT JESD17 MIL-STD-833, 300-mil J12B2