5DIP32 Search Results

A1273

Abstract: No abstract text available
Text: S G S -T H O M S O N G f. M28F1001 ilLt 1024K 128 x 8 CMOS FLASH MEMORY ADVANCE DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 ms. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES.