ksd5703
Abstract: No abstract text available
Text: KSD5703 KSD5703 High Voltage Color Display Horizontal Deflection Output No Damper Diode • High Collector-Base Voltage : VCBO=1500V • High Switching Speed tF = 0.3µs (Max.) • For Color TV TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor
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KSD5703
ksd5703
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KSD5707
Abstract: No abstract text available
Text: KSD5707 KSD5707 High Voltage Color Display Horizontal Deflection Output • High Collector - Base Voltage : VCBO = 1500V • High Speed Switching tF = 0.4µs Max. TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD5707
KSD5707
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KSC5802a
Abstract: KSC5802 cross reference TRANSISTOR ksc5802 KSC5802
Text: KSC5802 KSC5802 High Voltage Color Display Horizontal Deflection Output • • • • High Breakdown Voltage : BVCBO=1500V High Speed Switching : tF=0.1µs Typ. Wide S.O.A For C-Monitor(69KHz) TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor
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KSC5802
69KHz)
KSC5802TBTU
KSC5802ATBTU
KSC5802AYDTBTU
KSC5802SDTBTU
KSC5802ASDTBTU
KSC5802
KSC5802a
KSC5802 cross reference
TRANSISTOR ksc5802
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KSC5345TU
Abstract: No abstract text available
Text: KSC5345 KSC5345 High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area TO-220 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO
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KSC5345
O-220
Cycle10%
KSC5345TU
O-220
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1400v npn transistor
Abstract: using of damper in Horizontal Output Transistor FJAF6706D
Text: FJAF6706D FJAF6706D High Voltage Color Display Horizontal Deflection Output Damper Diode Built In Equivalent Circuit C • High Collector-Base Breakdown Voltage (BVCBO=1500V) B • High Switching Speed (tF. typ=0.1µs) • For Color TV 50Ω typ. TO-3PF
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FJAF6706D
1400v npn transistor
using of damper in Horizontal Output Transistor
FJAF6706D
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Untitled
Abstract: No abstract text available
Text: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for ElectronicBallast Application Small Variance in Storage Time
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FJP5304D
O-220
FJP5304D
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KSC2518
Abstract: No abstract text available
Text: KSC2518 KSC2518 High Speed, High Voltage Switching • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Load TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSC2518
O-220
PW350
KSC2518
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HLB122L
Abstract: HLB122
Text: UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage
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HLB122
HLB122
O-251
HLB122L
QW-R213-014
HLB122L
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HLB123
Abstract: HLB123SA IC DATE CODE ha2006
Text: HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2009.04,02 Page No. : 1/5 MICROELECTRONICS CORP. HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls
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HA200601
HLB123SA
217oC
260oC
10sec
HLB123
HLB123SA
IC DATE CODE
ha2006
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Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2009.04.17 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls
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HT200210
HMJE13003
O-126
183oC
217oC
260oC
10sec
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J5502
Abstract: KSC5502TU KSC5502 transistor npn 12V 1A Collector Current NPN Transistor 600V TO-220 vbe 12v, vce 600v NPN Transistor
Text: KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • Small Variance in Storage Time • Wide Safe Operating Area • Suitable for Electronic Ballast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings *
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KSC5502
O-220
KSC5502
J5502
KSC5502TU
transistor npn 12V 1A Collector Current
NPN Transistor 600V TO-220
vbe 12v, vce 600v NPN Transistor
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HLB123
Abstract: HLB123SA ha2006 HA-2006
Text: HI-SINCERITY Spec. No. : HA200601 Issued Date : 2006.12.01 Revised Date : 2006.12.28 Page No. : 1/5 MICROELECTRONICS CORP. HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls
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HA200601
HLB123SA
217oC
260oC
10sec
HLB123
HLB123SA
ha2006
HA-2006
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN1068C NPN Triple Diffused Planar Silicon Transistor 2SC3149 800V/1.5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2010C [2SC3149] 10.2
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ENN1068C
2SC3149
00V/1
VCBO900V)
2010C
2SC3149]
PW300
Cycle10%
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN1251A NPN Triple Diffused Planar Silicon Transistor 2SC3183 800V/0.2A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2010C [2SC3183] 10.2
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ENN1251A
2SC3183
00V/0
VCBO900V)
2010C
2SC3183]
PW300
Cycle10%
O-220AB
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2SC3083
Abstract: ITR05305 ITR05306 ITR05307 ITR05308 ITR05309
Text: Ordering number:EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3083] 15.6 14.0
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EN947B
2SC3083
00V/6A
VCBO500V)
2SC3083]
2SC3083
ITR05305
ITR05306
ITR05307
ITR05308
ITR05309
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2sc3151
Abstract: No abstract text available
Text: Ordering number:ENN1070C NPN Triple Diffused Planar Silicon Transistor 2SC3151 800V/1.5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3151] 15.6
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ENN1070C
2SC3151
00V/1
VCBO900V)
2SC3151]
PW300
Cycle10%
2sc3151
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN949B NPN Triple Diffused Planar Silicon Transistor 2SC3038 400V/4A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥500V . · Fast switching speed. · Wide ASO. unit:mm 2010C [2SC3038] 10.2 3.6
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ENN949B
2SC3038
00V/4A
VCBO500V)
2010C
2SC3038]
O-220AB
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2sa160
Abstract: 2SA1607 2SC4168 ITR04038 ITR04039 ITR04040 ITR04041
Text: Ordering number:ENN2479B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. unit:mm 2018B 0.4 0.16 0 to 0.1
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ENN2479B
2SA1607/2SC4168
2018B
2SA1607/2SC4168]
2SA1607
2sa160
2SA1607
2SC4168
ITR04038
ITR04039
ITR04040
ITR04041
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2SC3990
Abstract: No abstract text available
Text: Ordering n u m b e r:EN2234C No.2234C 2SC3990 NPN Triple Diffused Planar Silicon Transistor SA V V O i Switching Regulator Applications Features • High breakdown voltage, high reliability. •Fast switching speed. • Wide ASO. • Adoption of MBIT process.
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EN2234C
2234C
2SC3990
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KSC50
Abstract: No abstract text available
Text: KSC5021F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY • HIGH SPEED SWITCHING: tF = 0.1^s Typ • WIDE SOA ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 800 V Collector-Emitter Voltage V CEO 500 V Emitter-Base Voltage
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KSC5021F
KSC50
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Untitled
Abstract: No abstract text available
Text: [ Ordering number: EN 996B 2SC3039 N0.996B NPN Triple Diffused Planar Silicon Transistor K 4Ö0V/7A Switching Regulator Applications Features . High breakdown voltage VCB0£500V . Fast switching speed. . Wide ASO. Absolute Maximum Ratings at Ta;=25°C Collector-to-Base Voltage
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2SC3039
4147KI/3095MW,
200MH
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2SC3458
Abstract: 234S npn 10a 800v NPN Transistor 1.5A 5V
Text: Ordering number: EN 1589C 2SC3458 NPN Triple Diffused Planar Silicon Transistor 800V/3 A Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed tf: 0.1ps typ. . Wide ASO. . Adoption of MBIT process.
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1589C
2SC3458
00V/3
PWi300ps
2SC3458
234S
npn 10a 800v
NPN Transistor 1.5A 5V
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2SD1402
Abstract: No abstract text available
Text: 2SD1402 NPN Triple D iffu se d Planar S ilico n T ransistor 2022 Color TV Horizontal Deflection Output Applications 1.1269B Features: ’ High breakdown voltage and high reliability • High switching speed • Capable of being mounted easily due to one-point fixing type plastic mold
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2SD1402
1269B
200mA
Vtc-200V
5267KI/5033KI
2SD1402
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2SC3458
Abstract: No abstract text available
Text: Ordering number: EN 1589C 2SC3458 NPN T riple Diffused Planar Type S ilico n Transistor For Sw it c h in g Regulators Features . High breakdown voltage and high reliability. * Fast switching speed tf: 0.1ps typ. . Wide ASO. . Adoption of MBIT process. Absolute Maximum Bat logs at Ta=25°C
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1589C
2SC3458
2SC3458
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