5P J TRANSISTOR MARKING Search Results

5P J TRANSISTOR MARKING Result Highlights (5)

Part	Manufacturer	Description
54F139/BEA	Rochester Electronics LLC	54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA)
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)
54F151/BFA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA)
54F157/BEA	Rochester Electronics LLC	Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA)
54F153/BEA	Rochester Electronics LLC	54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA)

5P J TRANSISTOR MARKING Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MIP2F3 Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent	PDF
mip411 Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
KEP32 Abstract: HEP32 HP32 MC100EP32 MC10EP32 Text: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 1 8 8 1 VCC = 3.0 V to 5.5 V with VEE = 0 V	Original	MC10EP32, MC100EP32 KEP32 HEP32 506AA MC100 MC10EP32/D KEP32 HEP32 HP32 MC100EP32 MC10EP32	PDF
KEP32 Abstract: HEP32 HP32 MC100EP32 MC10EP32 Text: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description Features • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • http://onsemi.com MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751	Original	MC10EP32, MC100EP32 KEP32 HEP32 506AA MC100 MC10EP32/D KEP32 HEP32 HP32 MC100EP32 MC10EP32	PDF
KEP32 Abstract: MC100EP32DTG HEP32 HP32 MC100EP32 MC10EP32 Text: MC10EP32, MC100EP32 3.3V / 5V ECL B2 Divider Description • 350 ps Typical Propagation Delay • Maximum Frequency > 4 GHz Typical Figure 3 • PECL Mode Operating Range: • MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 1 8 8 1 VCC = 3.0 V to 5.5 V with VEE = 0 V	Original	MC10EP32, MC100EP32 KEP32 HEP32 506AA MC100 MC10EP32/D KEP32 MC100EP32DTG HEP32 HP32 MC100EP32 MC10EP32	PDF
5P J TRANSISTOR MARKING Abstract: No abstract text available Text: Ordering number:ENN1066A NPN Epitaxial Planar Silicon Transistor 2SC3142 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • FBET series. · Compact package enabling compactness of sets. · High fT and small cre fT=750MHz typ, cre=0.6 typ .	Original	ENN1066A 2SC3142 750MHz 2018B 2SC3142] 5P J TRANSISTOR MARKING	PDF
IC TA 31101 Abstract: pa 2030a equivalent pa 2030a FC102 ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor Text: SANYO SEMICONDUCTOR CORP 55E D 7 EH707fci Q D 0 7 M 4 D Q T - Z 7 -Ö 7 FC102 # NPN Epitaxial Planar Silicon Com posite Transistor 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3110 F eatu res •Composite type with 2 transistors contained in the CP package currently in use, im proving the	OCR Scan	00Q7M40 FC102 FC102 2SC4211, IC TA 31101 pa 2030a equivalent pa 2030a ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor	PDF
693F TRANSISTOR Abstract: 693F transistor 693f 2SC2814 P3NF Text: O rdering number : EN 693F _ 2SC2814 N0.693F NPN Epitaxial P lanar Silicon Transistor SANYO High-Frequency General-Purpose Amp Applications I Features . Very small package enabling compactness and slimness of sets. . High fx and small Cre* fT=320MHz typ, cre=0.95pF typ	OCR Scan	2SC2814 320MHz 693F TRANSISTOR 693F transistor 693f P3NF	PDF
2SC4399 Abstract: AC303 Text: Ordering number: EN 3020 2 S C 4 3 99 No.3020 NPN Epitaxial Planar Silicon Transistor SAiYO i High-Frequency General-Purpose Amp Applications F eatu re s • High power g a in : PG=25dB typ f= 100MHz • Very small-sized package permitting the 2SC4399-applied sets to be made small and slim	OCR Scan	EN3020 100MHz) 2SC4399-applied 2SC4399 AC303	PDF
693F TRANSISTOR Abstract: 693F N20J transistor 693f 2SC2814 2SC28H II04A Text: SAN YO S E M I C O N D U C T O R CORP TTTTOTb 5SE D OQDbTl? T • ' 3 'I S 2SC2814 ♦ NPN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 693F Features . V ery small pack a g e ena b l i n g compactness and slimness of sets.	OCR Scan	320MHz 693F TRANSISTOR 693F N20J transistor 693f 2SC2814 2SC28H II04A	PDF
2SA1177 Abstract: hf power amplifiers 2-30 mhz Text: Ordering number: EN 7 tì ci7G7ti 0 0 1 5 5 1 5 851G 44D 2SA1177 SAiYO PNP Epitaxial Planar Silicon Transistor i HF Amp Applications Use f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , . Id e a lly s u ite d IF a m p l i f i e r s .	OCR Scan	2SA1177 230MHz 2034/2034A SC-43 7tlt17D7b 2SA1177 hf power amplifiers 2-30 mhz	PDF
k 2059 TRANSISTOR Abstract: TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR Text: SANY O S E M I C O N D U C T O R 2SE CORP D 7 cH ? 0 7 b 000 3^33 7 2SC4400 T -3 I-IS 'r;' ,>V ^ ’sx'*>V:- N P N Epitaxial Planar Silicon Transistor 2059 High-Frequency General-Purpose Amp Applications F eatu res . High power gain • High cutoff frequency	OCR Scan	2SC4400 2SC4400-applied k 2059 TRANSISTOR TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR	PDF

D1803 Abstract: transistor d1803 Transistor 2SB1203 IC D1803 pa 2030a CAW 04 22E SD1803 2SB1203 NPN S2e d1803 transistor Text: SA NY O S E M I C O N D U C T O R 2SB1203, 2SD1803 CORP TWOTb SSE D OdOTnG 3 T - 3 3 -IR T -3 3 • ♦ P N P /N P N Epitaxial Planar Silicon Transistors 2 04 4 High-Current Switching Applications 2085B A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications	OCR Scan	2SB1203, 2SD1803 T-33-O^ 20S5B 2SB1203/2SD1803-applied 2SB1203 D1803 transistor d1803 Transistor 2SB1203 IC D1803 pa 2030a CAW 04 22E SD1803 NPN S2e d1803 transistor	PDF
SOT-23 marking l31 Abstract: wA SOT23 SWITCHING F9 SOT23 marking va transistors C5 MARKING TRANSISTOR transistor dg sot-23 U/25/20/TN26/15/850/F9 SOT23 BCW29 BCW30 BFQ31 Text: FERRANTI * semiconductors FMMT2369 NPN Silicon Planar High Speed Switching Transistor DESCRIPTION This device is intended specificelly fo r use in high speed, lo w current switching epplications. Encapsulated in th e popular SOT-213 package these devices are designed specifically fo r use in thin and thick film	OCR Scan	FMMT2369 OT-23 Continuo00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B BSS82C SOT-23 marking l31 wA SOT23 SWITCHING F9 SOT23 marking va transistors C5 MARKING TRANSISTOR transistor dg sot-23 U/25/20/TN26/15/850/F9 SOT23 BCW29 BCW30 BFQ31	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MMFT5P03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M F T 5P 0 3H D Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistor TMOS MEDIUM POWER FET 5.2 AMPERES	OCR Scan	MMFT5P03HD/D MMFT5P03HD switc82. 318E-04	PDF
marking code AD Abstract: transistor EH sot-23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 Text: FERRANTI semiconductors FMMT2369A NPN Silicon Planar High Speed S w itching Transistor DESCRIPTION This device is intended specifically for use in high speed, low current switching applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid	OCR Scan	FMMT2369A OT-23 Curre00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B BSS82C marking code AD transistor EH sot-23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20	PDF
S5P02H Abstract: No abstract text available Text: MOTOROLA Order this document by MMSF5P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 5P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 8.7 AMPERES	OCR Scan	MMSF5P02HD/D S5P02H	PDF
kn sot23 Abstract: sot-23 Marking KN BSV52 A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR Text: * FERRANTI semiconductors BSV52 NPN Silicon Planar High Speed Switching Transistor D E S C R IP TIO N This d evice is in te n d ed s p e c ific a lly fo r use in high speed, lo w c u rre n t s w itc h in g a p p lica tio n s. Encapsulated in th e p o p u la r S O T -2 3 package th ese devices	OCR Scan	BSV52 OT-23 BSV52 Volt00/300 FMMT2222 FMMT2369A FMMT2369 BSS82B kn sot23 sot-23 Marking KN A12 marking CTC ef 125 33 m8 SOT23 transistor EH sot-23 marking code transistors BSV52 marking code 25X SOT23 C5 MARKING TRANSISTOR	PDF
SOT-23 EBC Abstract: ZD 103 ma transistor marking code 7E SOT-23 TRANSISTOR a43 ferranti marking AG SOT 23 transistor sot-23 Marking AR BSS65 BSS65R BCW30 Text: FERRANTI i semiconductors BSS65 P N P S i l i c o n Plana r Hi gh Sp e e d S w i t c h i n g Transistor DESCRIPTION These devices are intended for use in high speed switchllng and high frequency amplifier applications. Encapsulated in the popular SOT-23 package, those	OCR Scan	BSS65 OT-23 BSS65 Colle00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B SOT-23 EBC ZD 103 ma transistor marking code 7E SOT-23 TRANSISTOR a43 ferranti marking AG SOT 23 transistor sot-23 Marking AR BSS65R BCW30	PDF
BENT LEAD transistor TO-92 Outline Dimensions Abstract: 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c Text: 5. PA C K A G E FO R M S 5.1 PACKAGE FORM SELECTION TABLE 5.1.1 SUPER-MINI DEVICES S-MINI (SC-59 , SMQ (SC-61), SMV, SM6) PACKAGING FORM PACKAGE SPECIFI CATION OUTLINE Pack PACKAGE UNIT - e TE85L Taping EXTERIOR Unit: mm » » » 3000 pcs/ Reel TE85R TE85N	OCR Scan	SC-59) SC-61) TE85L TE85R TE85N SC-70) BENT LEAD transistor TO-92 Outline Dimensions 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c	PDF
LT 1021 Abstract: 5P J TRANSISTOR MARKING LM368 Text: f T u n t _ LT1021 m TECHNOLOGY Precision R eference FEATURES DEBCRIFnOn • Pin Compatible with Most Bandgap Reference Applications, Including Ref 01, Ref 02, LM368, MC1400 and MC1404 with Greatly Improved Stability, Noise and Drift The LT 1021 is a precision reference with ultralow drift	OCR Scan	LM368, MC1400 MC1404 100dB 254mm) LT1019 LT1027 LT1236 200mV LT1389 LT 1021 5P J TRANSISTOR MARKING LM368	PDF
gn2011 Abstract: XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT Text: • z s K e m m m * — 5/ Mini Type 6 -p in P ackage Outline Transistors, Diodes $ .-M { 6 f t ? ) U n it i mm S E ^ O S - S I O S i) ¿ P li/ 'f y 'T -'y V -i'X T h 7 > y ' 7 J 2 m ? k iL tm , - is . i f H ■ 43 f t I L « T A B U S ' < 7 > r -	OCR Scan	tiA-Ac37' MA334 MA345 MA551 MA704 MA152WA MA152WK MA153 MA151WA MA151WK gn2011 XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT	PDF

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5P J TRANSISTOR MARKING Search Results

5P J TRANSISTOR MARKING Result Highlights (5)

5P J TRANSISTOR MARKING Datasheets Context Search

MIP2F3

mip411

2SC5936

2sc5929

KEP32

KEP32

KEP32

5P J TRANSISTOR MARKING

IC TA 31101

693F TRANSISTOR

2SC4399

693F TRANSISTOR

2SA1177

k 2059 TRANSISTOR

D1803

SOT-23 marking l31

Untitled

marking code AD

S5P02H

kn sot23

SOT-23 EBC

BENT LEAD transistor TO-92 Outline Dimensions

LT 1021

gn2011