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    5SMY 12M3300

    Abstract: 5SMY12M3300 C621-25
    Text: VCE IC = = 3300 V 62 A IGBT-Die 5SMY 12M3300 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1311-01 May 08 • • • • Ultra low loss IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: SIPOS Nitride plus Polyimide Maximum rated values Parameter


    Original     		PDF 12M3300 5SYA1311-01 CH-5600 5SMY 12M3300 5SMY12M3300 C621-25

    abb traction motor

    Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
    Text: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the


    Original     		PDF CH-5600 1768/138a 29palms abb traction motor diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12