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    5TE DIODE Search Results

    5TE DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    5TE DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BR7545

    Abstract: No abstract text available
    Text: 5TE ]> • 4ÔSS4S2 0012b3b MTS ■ INR PD-2.326 INTERNATIONAL RECTIFIER Intemaitional gelRectffier MBR7535 MBR7545 SCHOTTKY RECTIFIER 70 Amp Major Ratings and Characteristics Description/Features Characteristics M BR75. Units lF AV Rectangular waveform


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    PDF 0012b3b BR7535 BR7545 -65to150 MBR75. 300ps, DO-203AB D-276 BR7545

    Untitled

    Abstract: No abstract text available
    Text: 5TE D • 4ÖSS452 0G12b74 5Tb ■ INR PD-2.217A INTERNATIONAL RECTIFIER htemational S Rectifier 84c n q . s e rie s SCHOTTKY RECTIFIER 80 Amp Description/Features Major Ratings and Characteristics Characteristics 84CNQ. Units lF AV Rectangular waveform


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    PDF SS452 0G12b74 84CNQ. -55to125 j-100Â 84CNQ D-315 D-316

    Untitled

    Abstract: No abstract text available
    Text: 5TE D • 4Ô55452 GÜ12SSÔ *435 ■ INR PD-2.321 INTERNATIONAL RECTIFIER MBR2080CT m b r2 0 9 0 ct m b r2 o io o c t International S Rectifier SCHOTTKY RECTIFIER 20 Amp Description/Features Major Ratings and Characteristics Characteristics MBR20.CT Units


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    PDF MBR2080CT MBR20. 300ms, O-220AB 16CTQ D-168

    Zener Diode White noise

    Abstract: 1N4614-1N4627 AMERICAN POWER DEVICES D313 E zener diode si 18 D313 iran DIODE ZENER 1n4101 PACKAGE 1N4614 1N4615
    Text: 5TE D AMERICAN POWER DEVICES b 4 0737135 GGQ0Ü3T b*îô • APD 'T-//-o<? american 1N4614-1N4627 and 1N4099-1N4135 power devices, inc. Standard tolerances are 5% 2% & 1% are available , SEM IC O N D U C T O R S 400 mW low noise silicon zener diodes FEATURES


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    PDF 1N4614-1N4627 1N4099-1N4135 MIL-S-19500/435 DO-35 1N4614-1N4627 1N4614 Zener Diode White noise AMERICAN POWER DEVICES D313 E zener diode si 18 D313 iran DIODE ZENER 1n4101 PACKAGE 1N4614 1N4615

    Zener diode itt 13

    Abstract: IN4781a 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A
    Text: niCROSEMI CORP 5TE D • bllSflbS DD0n3fl 3t5 ■ / 1N4775 / thru Microisemi Corp. SANTA ANA. CA HSC j 1N4784A SCOTTSDALE. A7. fo t mu 602 94I-6300 FEATURES 8.5 VOLT TEMPERATURE COMPENSATED ZEN ER REFEREN CE DIO DES • ZENER VOLTAGE 8.5V + 5 % (See Note 4)


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    PDF 1N4775 1N4784A 94I-6300 1N4775 Zener diode itt 13 IN4781a 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A

    palce16v8 programming algorithm

    Abstract: No abstract text available
    Text: 5TE D • 02 57 5 2 b 00 32 2 7 1 510 MANDE ADV MICRO PLA/PLE/ARRAYS COM’L: H-7/10/15/25, Q-15/25 -_ MIL: H-10/15/20/25 PALCE16V8 Family AdvS EE CMOS 20-Pin Universal Programmable Array Logic Devices DISTINCTIVE CHARACTERISTICS ■ ■ Pin, function and fuse-map compatible with all


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    PDF H-7/10/15/25, Q-15/25 H-10/15/20/25 PALCE16V8 20-Pin palce16v8 programming algorithm

    Untitled

    Abstract: No abstract text available
    Text: CLARE C P / CP Clare SOLI D STATE CORPORATION 5TE D • eiMMTGM GÜGG17Û 473 B K P C L PowerBLOC Solid State Products Division -r-m -s i PowerBLOC Solid State Switches DESCRIPTION CP Clare’s “JT”/“MX” series solid state switches feature a time and field proven


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    PDF E69938

    gaseous lasers

    Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
    Text: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using


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    PDF 3030blD C86093E 200ns 910nm C86093E 900to gaseous lasers C86083E 910nm laser rca rca 019 1200cu general electric laser 910nm

    MSC 5511

    Abstract: L 3055
    Text: 5TE D • 0 3 N a tio n a l b5D112b GGbb'iSb S3b ^ ÆM Semiconductor - P 6 > 7 '7 > i - S 5 54VHC/74VHC139 Dual 2-to-4 Decoder/Demultiplexer General Description Features The VHC139 is an advanced high speed CMOS 2 to 4 line decoder/demultiplexer fabricated with silicon gate CMOS


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    PDF 54VHC/74VHC139 b5D112b VHC139 Cep-01451, MSC 5511 L 3055

    2SKI34

    Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
    Text: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t


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    PDF J22587 90-3D 2SKI34 TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576

    40CPQ40

    Abstract: TO-3P Jedec package outline
    Text: 5TE D • 4055452 DÜ1ES52 754 M I N R PD-2.308 RECTIFIER International S Rectifier 4o c p q o 5o 4o c p q o 6o SCHOTTKY RECTIFIER 40 Amp Description/Features The 40CPQ. center tap Schottky rectifier has been opti­ mized for very low forward voltage drop, with moderate


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    PDF 1ES52 Tj-125 40CPQ. O-247 D-193 DD125SS 40CPQ050 40CPQ060_ D-194 40CPQ40 TO-3P Jedec package outline

    ns537

    Abstract: N5522 NS546 n5s4 diode yz zener 1N5518 1N5546 1N5546B-1 N5519 N5533
    Text: HICROSEHI 5TE D coRP • b l l 5 ñ t . S 0 0 Ql ñ ^3 274 1N5518 thru 1N5546 M icm em i Corp. ¥ Tftetítoóe e*pe/ts SANTA AN A, CA SC O 'i 1S D A U . A / F or m ore i 602 941-6300 FEATURES LOW VOLT/ AVALANCHE DIODES DO-35 • LOW ZENER NOISE SPECIFIED


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    PDF 1N5518 1N5546 1N5518-I 1N5546B-1 MIL-S-19500/437 DO-35 ns537 N5522 NS546 n5s4 diode yz zener 1N5518 1N5546 N5519 N5533

    Untitled

    Abstract: No abstract text available
    Text: AMERICAN POWER D E V IC E S 5TE D 0 737 135 00G0077 american SEM ICO N D U CTO R S 4T1 • A P D /-H -JlS 1N6267 - 1N6303 1N6267A - 1N6303A p o w e r d evices, inc. 1500 W silicon voltage transient suppressors FEATURES MAXIMUM RATINGS • 1500 W of peak pulse power


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    PDF 00G0077 1N6267 1N6303 1N6267A 1N6303A

    1N33218

    Abstract: 1N3305 1N3305B 1N3350B 1N4549B 1N4550B 1N4552B 1N4555B 1N4556B 1N4564B
    Text: n i C R O S E n i coRP 5TE D MicrosemiCorp. j . r , SANTA ANA, CA • bll5flti5 D 0 0 1 ñ b 3 S3? ■ t„ vwniirt. SCOTTSDALE, AZ F o r m o r e i n f o r m a ti o n c a ll: / NSC 1N 3 3 0 5 thru 1N 3350B and 1N.4549B thru m,*jm e g p n ^ 602 941-6300


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    PDF 1N3305 1N3350B 1N4549Bthru N4550D 1N4549B 1N4550B 1N4651B 1N4552B t1N4553B 1N4564B 1N33218 1N3305B 1N3350B 1N4555B 1N4556B

    laser diode chip

    Abstract: nec 2222 NDL5850D DIODE CHIP
    Text: N E C ELECTRONI CS I NC fc.EE D • b4 5 7 S2 S 0 0 3 0 0 4 3 b5b H N E C E DATA SHEET NEC LASER DIODE NDL5850D ELECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M UNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE FOR 2 .4 Gb/s DESCRIPTION NDL5850D is 1550 nm DFB Distributed Feed-back laser diode chip on carrier with ribbon lead. This device is designed


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    PDF NDL5850D NDL5850D bM27SES laser diode chip nec 2222 DIODE CHIP

    1NS817

    Abstract: 1n5823a motorola 1w zener diodes 1n*23a 1n6933 k 3067 1N5914A 1N5915A 1N5916A 1N5920A
    Text: AM ER I C A N PO WER D E V I C E S STE D Ü 7 37 13 S 0 0 0 0 0 4 e] 537 • 1N5913-1N5949 american SE M IC O N D U C T O R S W r -it-tS " Standard tolerances of 5% 10%, 5%, 2% & 1% are available power devices, inc. 1.5 watt silicon zener diodes MECHANICAL


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    PDF 073713S 000004e] 1N5913-1N5949 DO-41 1NS817 1n5823a motorola 1w zener diodes 1n*23a 1n6933 k 3067 1N5914A 1N5915A 1N5916A 1N5920A

    Untitled

    Abstract: No abstract text available
    Text: IOR 4ass4sa Goicmi a • T-oi-as IN T E R N A T IO N A L R E C T IF IE R 199 R77R SERIES 500Q-4400 VOLTS RANGE 2 9 5 0 A MP A V G H O C K E Y P U K DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS I PART I NUH6SR i 1 X * Î X ! R77B5M 1 j ! i • I 1 S


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    PDF 500Q-4400 R77B5M R77R4Â R77R488 R77R440 5S452

    Untitled

    Abstract: No abstract text available
    Text: International @ Rectifier P D -9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 1200V • Short circuit rated -10ps @125°C, VGE= 10V 5^s @ VGE = 15V • Switching-loss rating includes all “tail" losses


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    PDF IRGPH50KD2 -10ps O-247AC S5452 C-1036

    irkv 300

    Abstract: d337 diode current source inverter D345 irkt 350 IRKH 180 base triggering circuit of 3 phase inverters
    Text: S IE 4Ô5SMS2 D 0Ü13373 International S Rectifier I INR SERIES IRK.170, .230, .250 SCR / SCR and SCR / DIODE INTERNATIONAL 504 NEW MAGN-A-pak Power Modules R EC TIFIER Features • ■ ■ ■ ■ ■ ■ ■ ■ High v o lta g e . E le c tric a lly is o la te d ba se p la te


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    PDF 5S452 0D133Ã 10ohm: 20ahms; 34-Thermal irkv 300 d337 diode current source inverter D345 irkt 350 IRKH 180 base triggering circuit of 3 phase inverters

    Untitled

    Abstract: No abstract text available
    Text: 4055452 □□1E4ÖE 5DD • INR international PD-2.325 Re c t i f i e r htemational Hü Rectifier MBR735 mbr745 SCHOTTKY RECTIFIER 7.5 Amp Major Ratings and Characteristics Description/Features Characteristics MBR7. Units lF AV Rectangular waveform 7.5


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    PDF -65to150 100Khz O-220AC D-122

    57141

    Abstract: S410
    Text: HARK IV/ GULTON GRAPHIC ÜS D • S7T4im 000G3D0 1 T - S i - 1S gulton. Graphic Instruments Division 011 39 TEXTHEAD, 6 X 7 DOTS - 062 • .010 ^ - T he 0 1 1 3 9 is arranged in six groups or columns of seven dots on 0 .0 1 6 8 " centers w ith 0 .0 5 0 " spacing between


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    PDF 000G3D0 57141 S410

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER S1E » • 48SS452 OOlSIbS 227 « I N R 3 Â //2 X M G o 6 1990 Bulletin 12018 INTERNATIONAL RECTIFIER I O R 25F. SERIES 25 Amp Average MEDIUM POWER SILICON RECTIFIER DIODES Features Description ■ W ide current range This range of low power


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    PDF 48SS452 MflS54SB

    10MQ040

    Abstract: No abstract text available
    Text: STE D • 4ASS4SS Gü l23 b4 bOM ■ INR P D -2.284 INTERNATIONAL RECTIFIER Intemsitional Iior IRectifier 10MQ040 SCHOTTKY RECTIFIER 1.1 Amp Description/Features Major Ratings and Characteristics Characteristics 10MQ040 Units lF AV Rectangular waveform 1.1


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    PDF 10MQ040 10MQ040 S5452

    Untitled

    Abstract: No abstract text available
    Text: • 46 55 4 5 2 DD12442 T24 ■ INR PD-2.047C INTERNATIONAL RECTIFIER International Rectifier sosq . s e r ie s SCHOTTKY RECTIFIER 8 Amp Description/Features Major Ratings and Characteristics The 80SQ axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The


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    PDF DD12442 Q01244S