Sony CXA1191M
Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
Text: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22
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0512d
------------------------------------0512d
z86e04
Sony CXA1191M
philips ecg master replacement guide
FZK101
YD 803 SGS
FZK 101 Siemens
CMC 707 am radio receiver
philips ecg semiconductors master replacement guide
CXA1191M
ym2612
ecg semiconductors master replacement guide
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Untitled
Abstract: No abstract text available
Text: UNR Series www.murata-ps.com Single Output, Non-Isolated, 1.8/2.5/3.3VOUT 3.6-10W DC/DC Converters PRODUCT OVERVIEW Murata Power Solutions' 3.6-10W UNR Series consists of non-isolated, 5V-to-1.8V 2A , 5V-to2.5V (2A), 5V-to-3.3V (3A), and 12V-to-3.3V (3A)
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rig8-1151
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5V 20mA 4 pin Relay
Abstract: No abstract text available
Text: UNR Series www.murata-ps.com Single Output, Non-Isolated, 1.8/2.5/3.3VOUT 3.6-10W DC/DC Converters PRODUCT OVERVIEW Murata Power Solutions' 3.6-10W UNR Series consists of non-isolated, 5V-to-1.8V 2A , 5V-to2.5V (2A), 5V-to-3.3V (3A), and 12V-to-3.3V (3A)
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Untitled
Abstract: No abstract text available
Text: UNR Series www.murata-ps.com Single Output, Non-Isolated, 1.8/2.5/3.3VOUT 3.6-10W DC/DC Converters PRODUCT OVERVIEW Murata Power Solutions' 3.6-10W UNR Series consists of non-isolated, 5V-to-1.8V 2A , 5V-to2.5V (2A), 5V-to-3.3V (3A), and 12V-to-3.3V (3A)
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schematic of TTL XOR Gates
Abstract: TTL XOR Gates ttl 2-bit half adder cmos XOR Gates schematic XOR Gates xnor ttl ALU of 4 bit adder and subtractor "XOR Gates" XNOR GATE cmos gate nand nor xor
Text: 0.8µm Standard Cell General Features • • • • 0.8µm single poly, double metal CMOS technology Operating voltage: 5V/3V Propagation delay of 2-input NAND with fanout=2 – 0.3ns for 5V high performance – 0.5ns for 5V high density – 0.5ns for 3V high performance
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cmos transistor 0.35 um
Abstract: 0.35Um c035 ZENER C035 5V IMD2 transistor bsim3v3 polysilicon 20v zener diode 3.3v zener C035
Text: 0.35µ µm 5V / 3.3V CMOS Process ID: SL [C035] Applications Main Process Flow • Interfacing high density industry- • P Substrate standard 0.35um core logic to 5V • LOCOS Field Oxidation
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Untitled
Abstract: No abstract text available
Text: Circuit Connections of 20mm Magnetic Encoder Technical Library RS Stock No 263-2974 +5V +5V VA VB A B O/P GA O/P GB 0V 0V SWITCH A B S1 S2 RS Components shall not be liable for any liability or loss of any nature howsoever caused and whether or not due to RS components' negligence
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sl 1053
Abstract: ac 0624 transistor 17-33 carry select adder cl 1100 TRANSISTOR PHL 0284 Phil 751 samsung inverter 0377 TRANSISTOR BI 187 d 2095 transistor
Text: STDH90/MDL90 0.35µm 3.3V/5V CMOS Standard Cell Library for Pure Logic/MDL Products STDH90/MDL90 0.35µm 3.3V/5V CMOS Standard Cell Library for Pure Logic/MDL Products Data Book 1998 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior
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STDH90/MDL90
STDH90/MDL90
STD90/MDL90)
sl 1053
ac 0624 transistor 17-33
carry select adder
cl 1100
TRANSISTOR PHL 0284
Phil 751
samsung inverter 0377
TRANSISTOR BI 187
d 2095 transistor
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standard cell library
Abstract: jtag samsung
Text: STDH90/MDL90 0.35µm 3.3V/5V CMOS Standard Cell Library for Pure Logic/MDL Products STDH90/MDL90 0.35µm 3.3V/5V CMOS Standard Cell Library for Pure Logic/MDL Products Data Book 1998 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior
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STDH90/MDL90
STDH90/MDL90
STD90/MDL90)
standard cell library
jtag samsung
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NA21 transistor
Abstract: kt 825 equivalent DF101 NA21 MGMC51 DL651 NA51 transistor power transistor na51 ami equivalent gates ami equivalent gates of each core cell
Text: “The new 0.8µm Standard Cell family from AMI delivers superior performance and flexibility . . . one of the lowest cost and highest performance 0.8µm standard cell ASIC products available today . . .” • Designed for 3V, 5V, or 3V/5V mixed supplies
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transorb
Abstract: No abstract text available
Text: ® INNOVATION and EXCELLENCE Triple Output A-Series, TWR Models High-Reliability, Wide-Input 12-15 Watt, DC/DC Converters A-SERIES Features • Low cost! Highly Reliable! • Output voltages: +5V/±12V or +5V/±15V • Ultra-wide, 18-72V, input voltage ranges
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8-72V,
1500Vdc
EN60950
DC/-01
transorb
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isolated low ripple 1w dc dc converter
Abstract: DCP010515BP
Text: DCP DCP0105 Series 010 DCP 5 010 5 Miniature 5V Input, 1W Isolated UNREGULATED DC/DC CONVERTERS FEATURES DESCRIPTION ● STANDARD JEDEC PLASTIC PACKAGE The DCP0105 family is a series of high efficiency, 5V input isolated DC/DC converters. In addition to 1W
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DCP0105
EN55022
1000Vrms
400kHz
szza046
DCP01/02
sbaa035a
sbva012
isolated low ripple 1w dc dc converter
DCP010515BP
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Untitled
Abstract: No abstract text available
Text: ® INNOVATION and EXCELLENCE Triple Output A-Series, TWR Models High-Reliability, Wide-Input 12-15 Watt, DC/DC Converters A-SERIES Features • Low cost! Highly Reliable! • Output voltages: +5V/±12V or +5V/±15V • Ultra-wide, 18-72V, input voltage ranges
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8-72V,
1500Vdc
EN60950
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transorb failure
Abstract: sp 500 48v datel converter us
Text: ® INNOVATION and EXCELLENCE Triple Output A-Series, TWR Models High-Reliability, Wide-Input 12-15 Watt, DC/DC Converters A-SERIES Features • Low cost! Highly Reliable! • Output voltages: +5V/±12V or +5V/±15V • Ultra-wide, 18-72V, input voltage ranges
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8-72V,
1500Vdc
EN60950
DC/-01
transorb failure
sp 500 48v
datel converter us
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CS61
Abstract: P1394 fujitsu lvds standard
Text: CS61 Series Standard Cell ▼ 0.28µm Leff Features ▼ • 0.28µm effective channel length • Over 3 million gates • 0.3µW/gate/MHz power dissipation @ 3.3V • 3.3V, 5V, 5V tolerant I/O interfaces • High-performance embedded SRAM • Analog and digital PPLs
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E9/15/19/25/35/45/59/71,
F20/30/40/50/60/70/80
E15/19/25/35/45/58/71,
F30/40/50/60/70/80
F40/50/60/70/80
E35/45/59/71,
F50/60/70/80
E19/25/35/45/59/71
E15/19,
F40/50
CS61
P1394
fujitsu lvds standard
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8-bit johnson
Abstract: verilog code for johnson counter 4 to 2 priority encoder modulo 16 johnson counter AD1032 phbx T74153 16 bit ripple adder verilog code for barrel shifter SEC 022D
Text: KG80/KGM 80 Gate Array Library 0.5nm 5V CMOS Process PRELIMINARY Library Description SEC ASIC offers KG80 5V gate array family and KGM80 3.3 V gate array family. KG80 and KGM80 are 0.5 Am CMOS processes supporting double-layer or triple-layer metal interconnection options.
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KG80/KGM
KGM80
8-bit johnson
verilog code for johnson counter
4 to 2 priority encoder
modulo 16 johnson counter
AD1032
phbx
T74153
16 bit ripple adder
verilog code for barrel shifter
SEC 022D
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HG62G
Abstract: HG51BS "gate array" HG62G HG71G HG51B hg51 QFP-296 HG62G010 HG71C HG62S
Text: ASICs Cell-Based ICs HG51 Series Product HG51BS HQ51CS HG51D Remarks Process 0.8 jim CMOS 0.7 nm CMOS 0.6 urn CMOS — Maximum raw gate count 200k 200k 350k — Supply voltage 5V 3V 5V 3V — Operating speed'1 0.23 ns 0.35 ns — — High-speed version library
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HG51BS
HQ51CS
HG51D
CRAM03A)
TQFP-80/100/120,
QFP-64/80/100/136/168/208/256/296
PLCC-44/68/84,
LQFP-144/176,
HG62S
14x20
HG62G
"gate array" HG62G
HG71G
HG51B
hg51
QFP-296
HG62G010
HG71C
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TC160G
Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
Text: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate
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TC170C
250ps
TC160G
toshiba LGA Nand
TC170C14
TC26SC
TC170C1
TC170C29
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block diagram of automatic college bell
Abstract: 28F Intel 297372 28010* intel 29043
Text: intei ADVANCE INFORMATION 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFile MEMORY Backwards-Compatible with 28F016SA, 28F008SA Command Set SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — User-Selectable 5V or 12V VPP Revolutionary Architecture
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28F016SV
16-MBIT
28F016SA,
28F008SA
56-Lead
16-Mbit
/0795/3K/M
block diagram of automatic college bell
28F Intel
297372
28010* intel
29043
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TC170G35
Abstract: No abstract text available
Text: TOSHIBA TC170G CMOS Gate Array 0.7fim, 5.0V ASICs The 0.7 |im, 5V TC170G allows higher system perfor mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate
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TC170G
260ps
TC160G
T0T7247
IS09000.
TC170G35
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UNR18
Abstract: No abstract text available
Text: IN N O V A T IO N a n d E X C E L L E N C E Single Output UNR SM Series Surface-Mount, Non-lsolated 1.8/2.5/3.3V, 3.6-1 OW DC/DC Converters Features DATEL's new 3.6-1 OW UNR SM Series consists of non-isolated, 5V-to-1,8V 2A , 5V-to-2.5V (2A), 5V-to-3.3V (3A), and 12V-to-3.3V (3A) DC/DC converters in
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realiz8/99
0004A25
UNR18
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TOSHIBA TC160G
Abstract: TC160G CH7E47 0.4mm pitch flip chip 256 pin toshiba graphics toshiba LGA Nand TC170C1 tc170c
Text: TOSHIBA TC170C CMOS Standard Cell 0.7nm, 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CM O S process with fast 250ps gate
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TC170C
250ps
IS09000.
Q0207
TOSHIBA TC160G
TC160G
CH7E47
0.4mm pitch flip chip 256 pin
toshiba graphics
toshiba LGA Nand
TC170C1
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ap393 "pin compatible"
Abstract: 297372
Text: 28F016SV • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — User-Selectable 5V or 12V Vpp ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block ■ 30.8 MB/sec Burst Write Transfer Rato ■ Backwards-Compatible with 28F016SA, 28F008SA Command Set
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28F016SV
56-Lead
28F016SA,
28F008SA
28F016SV
16-Mbit
ap393 "pin compatible"
297372
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Untitled
Abstract: No abstract text available
Text: 28F016SV • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — User-Selectable 5V or 12V VPP ■ Backwards-Compatible with 28F016SA, 28F008SA Command Set ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block ■ 30.8 MB/sec Burst Write Transfer Rate
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28F016SV
56-Lead
28F016SA,
28F008SA
28F016SV
16-Mbit
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