Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    6 TRANSISTOR ARRAY SOURCE Search Results

    6 TRANSISTOR ARRAY SOURCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    6 TRANSISTOR ARRAY SOURCE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ON SEMICONDUCTOR J122

    Abstract: MRF9002NR2
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original     		MRF9002NR2 PFP-16 MRF9002R2 MRF9002R2 ON SEMICONDUCTOR J122 PDF

    J133 mosfet transistor

    Abstract: transistor j239 MRF9002NR2 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original     		MRF9002R2 MRF9002NR2 PFP-16 J133 mosfet transistor transistor j239 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133 PDF

    MRF9002NR2

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original     		MRF9002R2 MRF9002NR2 PFP-16 PDF

    mosfet array vgs 5v 2A

    Abstract: MO-169 HIP0061 HIP0061AS2 MO-169AC diode 3982
    Text: HIP0061 S E M I C O N D U C T O R 60V, 3.5A, 3-Transistor Common-Source ESD Protected Power MOSFET Array March 1995 Features Package JEDEC MO-169 • Three 3.5A Power MOS N-Channel Transistors 7 DRAIN3 6 GATE3 5 DRAIN2 4 SOURCE 3 GATE2 2 DRAIN1 1 GATE1 • Output Voltage to 60V


    Original     		HIP0061 MO-169 100mJ HIP0061 1-800-4-HARRIS mosfet array vgs 5v 2A MO-169 HIP0061AS2 MO-169AC diode 3982 PDF

    TPIC1505

    Abstract: No abstract text available
    Text: TPIC1505 QUAD AND HEX POWER DMOS ARRAY SLIS058 – JUNE 1996 D D D D Low rDS on : 0.25 Ω Typ (Full H-Bridge) 0.35 Ω Typ (Triple Half H-Bridge) Pulsed Current: 6 A Per Channel (Full H-Bridge) 4 A Per Channel (Triple Half H-Bridge) Matched Sense Transistor for Class A-B


    Original     		TPIC1505 SLIS058 TPIC1505 PDF

    TPIC1505

    Abstract: No abstract text available
    Text: TPIC1505 QUAD AND HEX POWER DMOS ARRAY SLIS058 – JUNE 1996 D D D D Low rDS on : 0.25 Ω Typ (Full H-Bridge) 0.35 Ω Typ (Triple Half H-Bridge) Pulsed Current: 6 A Per Channel (Full H-Bridge) 4 A Per Channel (Triple Half H-Bridge) Matched Sense Transistor for Class A-B


    Original     		TPIC1505 SLIS058 TPIC1505 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPIC1505 QUAD AND HEX POWER DMOS ARRAY SLIS058 – JUNE 1996 D D D D Low rDS on : 0.25 Ω Typ (Full H-Bridge) 0.35 Ω Typ (Triple Half H-Bridge) Pulsed Current: 6 A Per Channel (Full H-Bridge) 4 A Per Channel (Triple Half H-Bridge) Matched Sense Transistor for Class A-B


    Original     		TPIC1505 SLIS058 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPIC1505 QUAD AND HEX POWER DMOS ARRAY SLIS058 – JUNE 1996 D D D D Low rDS on : 0.25 Ω Typ (Full H-Bridge) 0.35 Ω Typ (Triple Half H-Bridge) Pulsed Current: 6 A Per Channel (Full H-Bridge) 4 A Per Channel (Triple Half H-Bridge) Matched Sense Transistor for Class A-B


    Original     		TPIC1505 SLIS058 PDF

    M54563WP

    Abstract: 24 V pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY pnp 8 darlington array pnp 8 transistor array ttl
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54563WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54563WP is eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit


    Original     		M54563WP 500mA M54563WP 500mA) Jul-2011 24 V pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY pnp 8 darlington array pnp 8 transistor array ttl PDF

    Untitled

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform


    Original     		M63840KP 500mA M63840KP 500mA) PDF

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high


    Original     		M54562FP 500mA M54562FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY PDF

    Untitled

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high


    Original     		M54563FP 500mA M54563FP 500mA) 20P2N-A PDF

    M54563FP

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high


    Original     		M54563FP 500mA M54563FP 500mA) PDF

    Untitled

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform


    Original     		M63840FP 500mA M63840FP 500mA) PDF

    pnp DARLINGTON TRANSISTOR ARRAY

    Abstract: M54562WP 7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode
    Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54562WP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit


    Original     		M54562WP 500mA M54562WP 500mA) Jul-2011 pnp DARLINGTON TRANSISTOR ARRAY 7-Unit 300 mA Source Type Darlington Transistor Array with Clamp Diode PDF

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform


    Original     		M63840FP 500mA M63840FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 -U n it 400m A Transistor Array IR2C26 • IR 2C26 4-Unit 400mA Transistor Array Pin Connections Description The IR 2 C 2 6 is a 4 -circuit d rive r IC, which con­ sists of an input in verter and a current source type output section. The output section is composed of a


    OCR Scan     		IR2C26 400mA 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: G E SOLID STATE 01 D E | 36 75 0 6 1 ODlMtES 7 | _ Arrays CA3097 Thyristor/Transistor Array For Military, Commercial, and Industrial Applications Features: • Complete isolation between elements m n-p-n transistor - VCeo = 30 V min. Ic = 100 mA (max.)


    OCR Scan     		CA3097 221TB PDF

    M54563P

    Abstract: No abstract text available
    Text: M IT S U B IS H I BIPOLAR DIGITAL ICs M54563P 8-UNlT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY W ITH CLAM P DIODE DESCRIPTION The M54563P, 8-channel source driver, is designed for use PIN CONFIGURATION TOP VIEW with + 6 to + 1 6 V M O S logic systems.


    OCR Scan     		M54563P 500mA M54563P, M54563P PDF

    M2981P

    Abstract: M2981 24v 8 channel Relay driver 8-channel NPN darlington array
    Text: MITSUBISHI ELEK -CLINEAR> t>2 ^i| ~]~-<{3>-2<S ; ^ bSMTÖSb QQ04112 3 INDUSTRY STANDARD IND LINEAR ICs MITSUBISHI M2981 SEMICONDUCTORS 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION The M2981, 8-channel source driver, is designed for use with + 6 to


    OCR Scan     		QQ04112 M2981 500mA M2981, M2981P M2981 24v 8 channel Relay driver 8-channel NPN darlington array PDF

    td62782

    Abstract: No abstract text available
    Text: SILICON MONOLITHIC BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62781AP/F/AF TD62782AP/F/AF 8CH HIGH-VOLTAGE SOURCE DRIVER The T D 6 2 7 8 1 A P /F/A F Series are comprised of eight source current Transistor Array. These drivers are specifically designed for fluorescent


    OCR Scan     		TD62781AP/F/AF TD62782AP/F/AF 100ns, 100ns td62782 PDF

    transistor A62

    Abstract: 9709K darlington buffer array A634 DIP18 S0P16 BA12003 A6257 sink 8 low darlington array BA614
    Text: lumm Transistor array Number Output Max.vdtage Output current mA of CHS (V) BA612 5 BA6256 B A664 6 BA13001F hput/output type Input active Output current Circuit level construction type Package Feature 24 450 25 Invert H Sink Darlington DIP14 24 100 25 Invert


    OCR Scan     		BA612 BA614 BA6256 BA13001F BA13002F BA12001 BA12002 BA12003 BA12004 BA618 transistor A62 9709K darlington buffer array A634 DIP18 S0P16 A6257 sink 8 low darlington array PDF

    Untitled

    Abstract: No abstract text available
    Text: TD62781,782AP/F/AF T O SH IB A TO SH IBA BIPO LAR D IGITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TD62781AP, TD62781F, TD62781AF TD62782AP, TD62782F, TD62782AF 8CH HIGH-VOLTAGE SOURCE DRIVER The T D 6 2 7 8 1 A P /F /A F Series are comprised of eight source current Transistor Array.


    OCR Scan     		TD62781 782AP/F/AF TD62781AP, TD62781F, TD62781AF TD62782AP, TD62782F, TD62782AF DIP18-P-300-2 PDF

    16PIN

    Abstract: IEI-1213 MEI-1202 UPA1604 DD 127 D transistor
    Text: DATA SHEET N E C COMPOUND FIELD EFFECT POWER TRANSISTOR r i — I 9 H I ¿ ¿ P A 1 6 4 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The ¿uPA1604 is M onolithic N-channel Pow er M O S FET A rray that built CONNECTION DIAGRAM in 4 circuits, Clump Diode and resistances designed for LED, Relay,


    OCR Scan     		uPA1604 16PIN IEI-1213 MEI-1202 DD 127 D transistor PDF