VN64GA

Abstract: 1RF720 IRF740 inverter inverter irf840 sec irf840 2N6658 IRF120 IRF122 IRF130 IRF132
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

VN64GA

Abstract: 1rf820 IRF740 VN1001A 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

Contextual Info: MCOTS-N-28V-60-HG Single Output Half-brick Military COTS Non-Isolated DC‑DC Converters 0 - 60 V 40 A Non- Half-brick Continuous Input Output Current Isolated DC-DC Converter a pu d bl va ic n at ce io d n 9-60 V The MCOTS NiQor half-brick dc-dc converter is a

Contextual Info: Technische Information / Technical Information Netz Thyristor Phase Control Thyristor Technische Information / Technical Information T 821N 60.70TOH Netz Thyristor Phase Control Thyristor N T 821N 60.70TOH Technische Information / Technical Information

PCR-B3US-183C

Contextual Info: IEC60320-C13 IEC60320-C5 P/N Cord Length Rating PCR-B3US-37C SVT 3C/18AWG UL: 75°C / CSA: 60°C 370 mm / 14.6 in 125V/10A PCR-B3US-76C SVT 3C/18AWG UL: 75°C / CSA: 60°C 760 mm / 30 in 125V/10A PCR-B3US-183C SVT 3C/18AWG UL: 75°C / CSA: 60°C 1830 mm / 72 in

Contextual Info: STL35N6F3 N-channel 60 V, 0.019 Ω, 10 A STripFET III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features Order code VDSS RDS on max ID STL35N6F3 60 V < 0.022 Ω 10 A • N-channel enhancement mode ■ 100% avalanched rated

Contextual Info: STL35N6F3 N-channel 60 V, 0.019 Ω, 10 A STripFET III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features Order code VDSS RDS on max ID STL35N6F3 60 V < 0.022 Ω 10 A • N-channel enhancement mode ■ 100% avalanched rated

Contextual Info: MCOTS-N-28V-60-HG Single Output Half-brick Military COTS Non-Isolated DC‑DC Converters 9-60 V 0 - 60 V 40 A Non- Half-brick Continuous Input Output Current Isolated DC-DC Converter The MCOTS NiQor half-brick dc-dc converter is a non-isolated buck-boost regulator, which employs

Contextual Info: MCOTS-N-28V-60-HG Single Output Half-brick Military COTS Non-Isolated DC‑DC Converters 9-60 V 0 - 60 V 40 A Non- Half-brick Continuous Input Output Current Isolated DC-DC Converter The MCOTS NiQor half-brick dc-dc converter is a non-isolated buck-boost regulator, which employs

Contextual Info: T N 25C Lji Supertex inc. L ow T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package R d S ON V GS(th) BVtcs (max) (max) TO-243AA* DICE 200V 60 2.0V 1.0A — TN2520ND 240V 60 2.0V 1.0A TN2524N8 TN2524ND

SLA8001

Contextual Info: |_ S A N K E N ELECTRI^ C ^ ^ T ^ ^ ^ SLA8001 55E T> M 7^0741 GD0124Ö 37fl • SA K J Silicon NPN, PNP Epitaxial Planar ■Maximum Ratings 1 Item da=25C Symbol NPN PNP Unit V Collector-to-Base Voltage VCBO 60 -6 0 Collector-to-Emitter Voltage VCEO 60 -6 0

3x18AWG

Abstract: E55943 E315167 LL81924 LL81924 Type SVT 60C 300V SP-305 ul e315167 LL81924 3X18AW
Contextual Info: MARKING: SP-305 E55943 60i0. 10A l o/ m 125V 10A 125 V aj C -i—i 0 i^H nl • 200±30 E-GREEN L-BLACK N-WHITE UL) E315167 SVT 60'C CSA LL81924 TYPE ITEM NO RoHS Com pliant TITLE SVT 3X18AWG(0.824mm) 60‘C 300V VW-1 3X0.824mm2 (18AWG) 300V VW-1 ASSMANN

Contextual Info: Preliminary Data Sheet November 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

"RF Power Amplifier"

Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X
Contextual Info: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

RPM8000

Contextual Info: RP RADIUS POWER Your Power Partner MIL/COTS 3-PH+N EMI Power Line Filter RPM8000 Series RPM8000 MILITARY/ COTS TO 150A 50/60/400Hz MIL-STD-461/ DO-160 SPECIFICATIONS Operating Freq. : 50/60/400Hz Max. Operating Voltage : 480VAC Ambient Temperature : -40 to 70C

Contextual Info: Preliminary Product Brief April 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal

c101 TRANSISTOR

Abstract: transistor A114 AGR19060E transistor C101 AGR19060EF AGR19060EU JESD22-A114
Contextual Info: Preliminary Product Brief May 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Transistor J182

Contextual Info: Preliminary Data Sheet July 2003 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

transistor 7350

Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
Contextual Info: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

Contextual Info: Automotive Relays PCB Single Relays Power Relay PK2 THT – THR n 60% volume reduced Power K at increased performance area requirements minimized by 50% to only 293mm2 n Size optimized to lwh (mm) 18.3x16x15.9 n Limiting continuous current 40A n Maximum switch on current 200A

Contextual Info: PART NUMBER APPROVAL RATING SIZE OF CONDUCTOR AWG COMPOSITION TYPE OF CORDAGE LENGTH TEMPERATURE RATING* E E G L N CONTACT VIEW NEMA 5 -15P 10086 1250W 10A-125V 18 41/0.16 SVT SVT-60½C, 75½C, 105½C 7'6" 2.3m E E G C W L N W L N CONTACT VIEW NEMA 5 -15P

transistor 7350

Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L
Contextual Info: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

agastat 7022

Abstract: agastat 7012 be agastat 7012 AGASTAT RELAY Agastat 7032 agastat Time Delay Relay agastat time delay on drop out agastat timing relays
Contextual Info: Specialty Relays AGASTAT 7000 Series, Industrial Electropneumatic Timing Relay Design & Construction n Available in on-delay, true off-delay, and on/off-delay n Timing from 0.1 seconds to 60 minutes, in linear increments n Oversize adjustment knobs, serrated with high-resolution

F20NF06

Abstract: p20nf06 STP20NF06 STF20NF06
Contextual Info: STP20NF06 STF20NF06 N-CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET II POWER MOSFET Table 1: General Features Figure 1:Package TYPE VDSS RDS on ID STP20NF06 STF20NF06 60 V 60 V < 0.07 Ω < 0.07 Ω 20 A 20 A(*) • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω