Untitled
Abstract: No abstract text available
Text: SKiM 300 GD 063 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 600 600 300 / 220 600 / 440 ± 20 625 – 40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms
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Untitled
Abstract: No abstract text available
Text: SKiM 300 GD 063 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 600 600 300 / 220 600 / 440 ± 20 625 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms
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Untitled
Abstract: No abstract text available
Text: SKiM 300 GD 063 D Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 600 600 300 / 220 600 / 440 ± 20 625 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms
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ixys dsei
Abstract: ixys dsei 8 806-AS
Text: Fast Recovery Epitaxial Diode FRED DSEI 8 IFAVM = 8 A VRSM A V VRRM VRRM = 600 V = 35 ns trr Type C TO-220 AC DSEI 8-06A V C 640 640 600 600 DSEI 8-06A DSEI 8-06AS C Maximum Ratings A A = Anode, C = Cathode TO-263 AA DSEI 8-06AS Symbol Test Conditions I FRMS
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O-220
8-06AS
O-263
50ture.
ixys dsei
ixys dsei 8
806-AS
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60-06A
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED VRSM V 600 VRRM DSEI 60 IFAVM = 60 A VRRM = 600 V = 35 ns trr C A Type TO-247 AD V 600 DSEI 60-06A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM
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O-247
0-06A
60-06A
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60-06A
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED VRSM V 600 VRRM DSEI 60 IFAVM = 60 A VRRM = 600 V = 35 ns trr C A Type TO-247 AD V 600 DSEI 60-06A C C A Symbol Test Conditions I FRMS I FAVM ¬ I FRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM
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O-247
0-06A
60-06A
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PDF
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA VRRM = 600 V MEK 95-06 DA IFAV = 95 A MEE 95-06 DA trr = 250 ns 3 TO-240 AA 2 VRSM V 600 VRRM V 1 Type MEA95-06 DA 600 1 2 MEK 95-06 DA 3 1 2 Symbol Test Conditions I FRMS I FAV ¬ I FRM Tcase = 75°C
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O-240
MEA95-06
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50-90mm
Abstract: 95-06DA
Text: Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA VRRM = 600 V MEK 95-06 DA IFAV = 95 A trr = 250 ns 3 TO-240 AA 2 VRSM V 600 V RRM 1 Type V MEA95-06 DA 600 1 2 MEK 95-06 DA 3 1 2 3 Symbol Test Conditions I FRMS IFAV ① I FRM Tcase = 75°C Tcase = 75°C; 180° sine
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MEA95-06
O-240
D-68623
50-90mm
95-06DA
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Untitled
Abstract: No abstract text available
Text: Surface Mount Attenuator/Switch 50Ω Bi-Phase 600 to 1000 MHz Maximum Ratings Features Operating Temperature • wideband 600 to 1000 MHz -40°C to 85°C Storage Temperature SYAS-860 -55°C to 100°C Control Current • bi-phase modulator Pin Connections
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SYAS-860
TTT166
M112207
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EUPEC DD 600 N K
Abstract: v0215
Text: European PowerSemiconductor and Electronics Company Marketing Information DD 600 N M10 screwing depth max. 18,0 31 50 44 25 25 100 112 124 6 A 144 K AK VWK February 1996 DD 600 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische Spitzensperrspannung
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DD600N7
EUPEC DD 600 N K
v0215
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Untitled
Abstract: No abstract text available
Text: Surface Mount SYAS-860+ SYAS-860 Attenuator/Switch 50Ω Bi-Phase 600 to 1000 MHz Maximum Ratings Features Operating Temperature Storage Temperature -55°C to 100°C Control Current CASE STYLE: TTT166 PRICE: $15.95 ea. QTY. 1-9 • wideband 600 to 1000 MHz
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SYAS-860+
SYAS-860
TTT166
M111708
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PDF
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Untitled
Abstract: No abstract text available
Text: Surface Mount SYAS-860+ SYAS-860 Attenuator/Switch 50Ω Bi-Phase 600 to 1000 MHz Maximum Ratings Features Operating Temperature • wideband 600 to 1000 MHz -40°C to 85°C Storage Temperature -55°C to 100°C Control Current Applications 30mA + RoHS compliant in accordance
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SYAS-860+
SYAS-860
TTT166
2002/95/EC)
TB-12
PL-079)
SYAS-860
M111708
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PDF
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Untitled
Abstract: No abstract text available
Text: Surface Mount Attenuator/Switch 50Ω Bi-Phase 600 to 1000 MHz Maximum Ratings Features Operating Temperature • wideband 600 to 1000 MHz -40°C to 85°C Storage Temperature SYAS-860 -55°C to 100°C Control Current CASE STYLE: TTT166 PRICE: $15.95 ea. QTY. 1-9
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Original
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SYAS-860
TTT166
TB-12
PL-079)
SYAS-860
M102713
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PDF
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1838 b
Abstract: No abstract text available
Text: Surface Mount Attenuator/Switch 50Ω Bi-Phase 600 to 1000 MHz Maximum Ratings Features Operating Temperature • wideband 600 to 1000 MHz -40°C to 85°C Storage Temperature SYAS-860 -55°C to 100°C Control Current CASE STYLE: TTT166 PRICE: $15.95 ea. QTY. 1-9
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Original
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SYAS-860
TTT166
SYAS-860
M102713
1838 b
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PDF
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35-06AS
Abstract: No abstract text available
Text: □IXYS Fast Recovery Epitaxial Diode FRED DSEI35 V RRM 600 V 37 A FAVM 35 ns v RSM ^ rrm V V 600 600 Symbol *FHMS hvM * ^FRM *FSM Ji2dt Maximum Rating T1 VJ = T1 VJM Tc = 85°C; rectangular, d = 0.5 tp < 10 (j.s; rep. rating, pulse width limited by VJM
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OCR Scan
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DSEI35
O-263
35-06AS
DSEI30-06A
6503A
35-06AS
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PDF
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Untitled
Abstract: No abstract text available
Text: nixYS DSEI19 vRRM IFAVM Fast Recovery Epitaxial Diode FRED 600 V 20 A 35 ns Advanced data v RSM V„rm V V 600 600 f A Type C l \ TO-263 AA C (TAB) DSEI19-06AS A = Anode, C = Cathode, NC = No connection TAB = Cathode Symbol Maximum Ratings Test Conditions
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OCR Scan
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DSEI19-06AS
DSEI19
O-263
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PDF
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Untitled
Abstract: No abstract text available
Text: □IXYS Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA MEK 95-06 DA VRRM = 600 V lFAV = t[r = 250 ns TO-240 AA V_ V_ 600 MEA95- 06 DA 600 1 2 95 A 3 MEK 95- 06 DA 3 1 2 3 i_ - i i _ Symbol Test C onditions
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OCR Scan
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O-240
MEA95-
Mbfib52h
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PDF
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DSEI35-06AS
Abstract: No abstract text available
Text: IXYS Fast Recovery Epitaxial Diode FRED DSEI 35 VRRM = 600 V ^FAVM trr 35 A = 35 ns = Advanced data v v 600 600 DSEI 35-06AS A = Anode, C = Cathode, NC = No connection TAB = Cathode Symbol Test Conditions Maximum Ratings ^FRMS W m ^FRM TVJ - "^"vjm Tc = 65°C; rectangular, d = 0.5
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OCR Scan
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DSEI35
DSEI35-06AS
O-263
DSEI35-06AS
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PDF
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DIXYS
Abstract: No abstract text available
Text: DIXYS 600 V DSEI35 v Fast Recovery Epitaxial Diode FRED RRM 35 A 35 ns FAVM rr Advanced data v nsM V rrm V V 600 600 f ^1 A Type TO-263 AA \ C NC c (TAB) DSEI35-06AS A = Anode, C = Cathode, NC = No connection TAB = Cathode Maximum Ratings Symbol Test Conditions
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OCR Scan
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DSEI35
O-263
DSEI35-06AS
DIXYS
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PDF
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95-06DA
Abstract: No abstract text available
Text: DIXYS Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA MEK 95-06 DA RRM 'FAV t rr = 600 V = 95 A = 250 ns TO-240 AA 600 RRM Type V MEA95-06 DA 600 1 Symbol Test Conditions ^FRMS Ifav 1 Ifrm Tease = T case = Ifsm T VJ l2t MEK 95-06 DA 2 1 2 Maximum Ratings
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OCR Scan
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O-240
MEA95-06
M5x10
80-----------------J
95-06DA
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PDF
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MEA160-06DA
Abstract: MEK160-06DA
Text: MEA 160-06DA FAVM MEE 160-06DA V,RRM MEK 160-06DA trr Fast Recovery Epitaxial Diode FRED Modules 162 A 600 V 250 ns Preliminary data Type ' RRM V 600 MEA160-06DA 1 600 MEK 160-06DA MEE 160-06DA 2 2 1 1 2 ! H4-L-W-J I ! 1 >i I w 1! !1•h 1 H ' ] I_ J I- J I-i
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OCR Scan
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160-06DA
160-06DA
MEA160-06DA
MEK160-06DA
MEA160-06DA
MEK160-06DA
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PDF
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Untitled
Abstract: No abstract text available
Text: n ix Y S Fast Recovery Epitaxial Diode FRED v V rrm V V ¥ rsm 640 640 DSEI8 IFAVM vrRRM t. A T yp e 600 600 / \ \ C 8A 600 V 35 ns TO-220 AC DSEI 8-06A m DSEI 8-06A DSEI 8-06AS A = Anode, C = Cathode TO-263 AAk DSEI 8-06AS S ym bo l T e s t C o n d itio n s
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OCR Scan
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O-220
8-06AS
O-263
DSE119
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PDF
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CHN 747
Abstract: oms 450 DIODE RK 306 CHN 450 E72873 MDD220-06N1 MDD220-08N1 MDD220-12N1 MDD220-14N1 rectifier bridge VU
Text: H71 B IIX Y 4t>flb22b 000171A n iX Y S Diode Modules MDD220 iTAV= 2 x 270 A VRRM = 600-1600 V Vmm V rm , Type V V Version 1 700 900 1300 1500 1700 600 600 1200 1400 1600 M D D 220-08N1 M D D 220-08N 1 M D D 220-12N 1 / z k S - M D D 220-16N1 Sym bol T e s t conditions
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OCR Scan
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4bflb52b
000171a
MDD220
MDD220-06N1
MDD220-08N1
MDD220-12N1
MDD220-14N1
MD0220-16N1
MDD220
CHN 747
oms 450
DIODE RK 306
CHN 450
E72873
MDD220-06N1
MDD220-08N1
MDD220-12N1
MDD220-14N1
rectifier bridge VU
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IC 7476
Abstract: BSTD0313S6 BSTD0313 7476 IC BSTC0326S6 BSTD0366 BSTD0353S6 BSTC0340S6 TW7N BSTC0353S6
Text: Low power thyristors Type V EUPEC ' tsm 'trm sm drm / i 2dt ' tavm^ c t lE V TO 11 • It 3^D3^‘,7 000131,4 037 " UPEC (di/dt)cr (dv/dt)cr VffT Igt Rthjc W j m ax Outline V rrm V A T 3,5 N 400 600 800 T 5 N 400 600 800 T 7,5 N DIN IEC 747-6 tvj = tvj max
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OCR Scan
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34032T7
DD0134A
IC 7476
BSTD0313S6
BSTD0313
7476 IC
BSTC0326S6
BSTD0366
BSTD0353S6
BSTC0340S6
TW7N
BSTC0353S6
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