Untitled
Abstract: No abstract text available
Text: IDD15E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C 600VV Emitter • 600 EmConControlled technologytechnology • Fast recovery • Soft switching • Low reverse recovery charge
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Original
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IDD15E60
PG-TO252-3
D15E60
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PDF
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Untitled
Abstract: No abstract text available
Text: IDB45E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Product Summary Feature • 600V 600 VEmitter EmConControlled technologytechnology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax
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Original
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IDB45E60
PG-TO263-3-2
D45E60
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PDF
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Untitled
Abstract: No abstract text available
Text: IDB15E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Product Summary Feature • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 15 A VF 1.5 V T jmax
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Original
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IDB15E60
-TO263-3-2
PG-TO263-3-2
D15E60
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PDF
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Untitled
Abstract: No abstract text available
Text: IDB30E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature 600VV Emitter • 600 EmConControlled technologytechnology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 30 A VF 1.5 V T jmax 175 °C
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Original
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IDB30E60
PG-TO263-3-2
D30E60
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PDF
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Untitled
Abstract: No abstract text available
Text: IDB23E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature 600VV Emitter • 600 EmConControlled technologytechnology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C
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Original
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IDB23E60
-TO263-3-2
D23E60
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PDF
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Untitled
Abstract: No abstract text available
Text: IDD15E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C
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Original
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IDD15E60
PG-TO252-3-1
D15E60
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PDF
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Untitled
Abstract: No abstract text available
Text: IDB09E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary VRRM Feature 600VV Emitter • 600 EmConControlled technologytechnology 600 V IF 9 A VF 1.5 V T jmax 175 °C • Fast recovery • Soft switching 2 • Low reverse recovery charge
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Original
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IDB09E60
PG-TO263-3
D09E60
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PDF
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Untitled
Abstract: No abstract text available
Text: IDB15E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Product Summary Feature VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C 600VV Emitter • 600 EmConControlled technologytechnology • Fast recovery 2 • Soft switching • Low reverse recovery charge
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Original
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IDB15E60
PG-TO263-3
D15E60
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PDF
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Untitled
Abstract: No abstract text available
Text: IDB23E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature • 600 EmConControlled technologytechnology 600VV Emitter VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C • Fast recovery • Soft switching 2 • Low reverse recovery charge
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Original
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IDB23E60
PG-TO263-3
-TO263-3
D23E60
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PDF
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Untitled
Abstract: No abstract text available
Text: IDB30E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Fast Product Summary VRRM 600 V IF 30 A Feature VF 1.5 V • 600 EmConControlled technologytechnology 600VV Emitter T jmax 175 °C • Fast recovery • Soft switching 2 • Low reverse recovery charge
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Original
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IDB30E60
PG-TO263-3
D30E60
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PDF
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Untitled
Abstract: No abstract text available
Text: IDD06E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature 600 V IF 6 A VF 1.5 V T jmax 175 °C VRRM • 600 EmConControlled technologytechnology 600VVEmitter • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage
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Original
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IDD06E60
PG-TO252-3-1
D06E60
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PDF
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idd06e60
Abstract: D06E6
Text: IDD06E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary VRRM Feature 600 V IF 6 A VF 1.5 V T jmax 175 °C • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage
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Original
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IDD06E60
PG-TO252-3
D06E60
idd06e60
D06E6
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PDF
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Untitled
Abstract: No abstract text available
Text: IDB09E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature VRRM • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO263-3-2
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Original
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IDB09E60
PG-TO263-3-2
D09E60
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PDF
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Untitled
Abstract: No abstract text available
Text: IDB45E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Fast Product Summary Feature VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery 2 • Soft switching • Low reverse recovery charge
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Original
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IDB45E60
PG-TO263-3
D45E60
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PDF
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DIODE 1000a
Abstract: D15E60 IDP15E60 IEC61249-2-21
Text: IDP15E60 Fast EmCon Diode Product Summary Features VRRM 600 V IF 15 A • Fast recovery VF 1.5 V • Soft switching T jmax 175 °C • 600 V diode technology • Low reverse recovery charge PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant
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Original
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IDP15E60
PG-TO220-2
IEC61249-2-21
D15E60
DIODE 1000a
D15E60
IDP15E60
IEC61249-2-21
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PDF
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smd diode 46A
Abstract: IDP23E60 IEC61249-2-21 DIODE 1000a PG-TO220-2
Text: IDP23E60 Fast Switching Diode Product Summary Features • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant
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Original
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IDP23E60
PG-TO220-2
IEC61249-2-21
D23E60
smd diode 46A
IDP23E60
IEC61249-2-21
DIODE 1000a
PG-TO220-2
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PDF
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D45E60
Abstract: INFINEON D45E60 DIODE 1000a IDP45E60 Diode 400V 5A fast recovery diode 400v 5A IEC61249-2-21 if45a 1000A diode switching DIODE 1000A
Text: IDP45E60 Fast Switching Diode Product Summary Features • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant
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Original
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IDP45E60
PG-TO220-2
IEC61249-2-21
PG-TO220-2-2.
D45E60
D45E60
INFINEON D45E60
DIODE 1000a
IDP45E60
Diode 400V 5A
fast recovery diode 400v 5A
IEC61249-2-21
if45a
1000A diode
switching DIODE 1000A
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PDF
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Diode smd code 9a
Abstract: diode MARKING CODE 18A D09E60 IDP09E60 IEC61249-2-21
Text: IDP09E60 Fast Switching Diode Product Summary Features VRRM • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant
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Original
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IDP09E60
PG-TO220-2
IEC61249-2-21
D09E60
Diode smd code 9a
diode MARKING CODE 18A
D09E60
IDP09E60
IEC61249-2-21
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PDF
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diode 400V 6A
Abstract: D06E60 smd diode marking 6a 400v 3a low vf diode diode 6a 400v 6A SMD diode diode fast recovery 400V 3A 6A FAST DIODE IDP06E60 IEC61249-2-21
Text: IDP06E60 Fast Switching Diode Product Summary Features VRRM • 600 V diode technology 600 V IF 6 A • Fast recovery VF 1.5 V • Soft switching T jmax 175 °C • Low reverse recovery charge PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant
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Original
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IDP06E60
PG-TO220-2
IEC61249-2-21
D06E60
diode 400V 6A
D06E60
smd diode marking 6a
400v 3a low vf diode
diode 6a 400v
6A SMD diode
diode fast recovery 400V 3A
6A FAST DIODE
IDP06E60
IEC61249-2-21
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PDF
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24N60AU
Abstract: ixsh24n60au1 24n60au1 TO-247 weight
Text: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V
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OCR Scan
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24N60U1
24N60AU1
IXSH24N60AU1
1999IXYS
24N60AU
ixsh24n60au1
TO-247 weight
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PDF
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d06s60
Abstract: diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ
Text: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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Original
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SDB06S60
P-TO220-3
Q67040-S4370
D06S60
d06s60
diode schottky 600v
T-1228
SDB06S60
SDP06S60
smd diode marking code UJ
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PDF
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smd diode marking code UJ
Abstract: Q67040-S4370
Text: SDB06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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Original
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SDB06S60
P-TO220-3
D06S60
Q67040-S4370
smd diode marking code UJ
Q67040-S4370
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PDF
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D06S60
Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
Text: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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Original
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SDB06S60
Q67040-S4370
D06S60
D06S60
Q67040-S4370
P-TO263-3-2
T-1228
SDB06S60
SDP06S60
smd schottky diode marking 6a
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PDF
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mj 340
Abstract: MJ340 50n60 50N60AU1 IXSX50N60AU1 IXSX50N60AU1S
Text: Preliminary data VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 VCE sat = 2.7 V IGBT with Diode Combi Pack Short Circuit SOA Capability Symbol TO-247 Hole-less SMD (50N60AU1S) Test Conditions C (TAB) G Maximum Ratings E VCES TJ = 25°C to 150°C 600
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Original
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IXSX50N60AU1
IXSX50N60AU1S
O-247
50N60AU1S)
IXSX50N60AU1S
mj 340
MJ340
50n60
50N60AU1
IXSX50N60AU1
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PDF
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