Contextual Info: TGF2060 600um Discrete GaAs pHEMT Applications •     Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features         Functional Block Diagram Frequency Range: DC - 20 GHz

Contextual Info: TGF2060 600um Discrete GaAs pHEMT Applications • • • • • Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features • • • • • • • • Functional Block Diagram Frequency Range: DC - 20 GHz

Contextual Info: TGF2060 600um Discrete GaAs pHEMT Applications • • • • • Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features • • • • • • • • Functional Block Diagram Frequency Range: DC - 20 GHz

320l 79l05

Abstract: 79L05 NSC 79L05 Transistor 79L05 79L05 transistor 79L05 NS LM79L05AC LM79L12AC 79l12 transistor 320L
Contextual Info: LM79L05,LM79L05AC,LM79L12,LM79L12AC, LM79L15,LM79L15AC LM79LXXAC Series 3-Terminal Negative Regulators Literature Number: SNOSBR8J LM79LXXAC Series 3-Terminal Negative Regulators General Description The LM79LXXAC series of 3-terminal negative voltage regulators features fixed output voltages of −5V, −12V, and −15V

floppy disk magnetic read write head assembly

Abstract: floppy disk Stepping Motors floppy disk motor head step 12V SM 39 Z 2 STEPPER MOTOR ERA-33 Fdd spindle motor circuit floppy disk read photo toshiba motor step magnetic head FDD smps 10w 5V
Contextual Info: INTEGRATED CIRCUIT H IB A TECHN|CAL D a t A TO TC8602F TC8602F Floppy Disk Mectiariism Controller INTRODUCTION 33 32 3] 3U 33 IS 27 26 25 24 23 F D M C - I I LSI T C 8 6 0 2 F is a s i n g l e c h i p C M O S LSI for the f l o p p y d i s k d r i v e d i g i t a i c o n t r o l logic, c o n s i s t i n g of

Contextual Info: Product Data Sheet November 21, 2002 2 - 20 GHz Power Amplifier TGA8334-SCC Key Features and Performance • • • • • • • 2 to 20 GHz Frequency Range 0.4-W Output Power at 1 dB Gain Compression at Midband Positive Gain Slope Across Frequency On-Chip Input DC-Blocking Capacitor

CFS0303-SB-0G0T

Abstract: TRANSISTOR BD 137-10 PB-CFS0303-SB-00B0 transistor 2440 bd 9473
Contextual Info: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package May 2006 - Rev 23-May-06 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA

a42 a92 transistor

Abstract: a92 TRANSISTOR transistor A92 A92 at
Contextual Info: A92 A92 Silicon PNP Epitaxial Transistor Description: The A92 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone Features: ●High voltage: VCEO=300V ●Complementary to A42 Chip Appearance Chip Size

TRANSISTOR A42

Abstract: a42 TRANSISTOR a42 a92 transistor
Contextual Info: A42 A42 Silicon NPN Epitaxial Transistor Description: The A42 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone Features: ●High voltage: VCEO=300V ●Complementary to A92 Chip Appearance Chip Size

Contextual Info: LM49150 LM49150 Mono Class D Audio Subsystem with Earpiece Driver and StereoGround Referenced Headphone Amplifiers Literature Number: SNAS439B March 4, 2009 Mono Class D Audio Subsystem with Earpiece Driver and Stereo Ground Referenced Headphone Amplifiers

TGA1073B-SCC

Contextual Info: Product Datasheet February 13, 2001 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA

Contextual Info: LM49150 Mono Class D Audio Subsystem with Earpiece Driver and Stereo Ground Referenced Headphone Amplifiers General Description Key Specifications The LM49150 is a fully integrated audio subsystem designed for portable handheld applications such as cellular phones.

4202 BD TRANSISTOR

Abstract: lg 8993 f 4556 TRANSISTOR BD 137-10 C 5478 transistor 329 9148 f 9582 dc bd 8050 TRANSISTOR QFN 5853
Contextual Info: CDQ0303-QS 500 MHz to 6000 MHz Dual, Ultra Low-Noise, High IP3 Amplifier Advanced Product Information May 2005 V1.0 1 of 18 Features ❏ Matched Pair of Transistors for Optimum Ballanced Amplifier Design ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT)

TRANSISTOR BD 137-10

Contextual Info: CFS0303-SB Advanced Product Information March 2004 V1.3 1 of 16 Features ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) ❏ High Dynamic Range ❏ Low Current and Voltage. ❏ Bias Point 3V and 60 mA ❏ 0.3 dB noise figure at 2 GHz

STMICRO top-side marking

Abstract: marking code nt amplifier Utah speaker TS4851 TS4851EIJT TS4851IJT TS485IJT TSDC02IJT STmicro marking
Contextual Info: TS4851 Mono 1W Speaker and Stereo 160mW Headset BTL Drivers with Digital Volume Control • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Operating from VCC = 3V to 5.5V Rail to rail input/output Speaker driver with 1 W output @ Vcc = 5V, THD+N = 1%, F = 1kHz, 8Ω load

45W BTL

Abstract: BLM18EG121SN1 TS4962 TS4962M CS210
Contextual Info: TS4962M 3W filter-free class D audio power amplifier Features Pin connections • Operating from VCC = 2.4V to 5.5V ■ Standby mode active low IN+ GND OUT- Output power: 3W into 4Ω and 1.75W into 8Ω with 10% THD+N max and 5V power supply. 1/A1 2/A2 3/A3

Contextual Info: Product Datasheet January 17, 2005 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA

SMD TRANSISTOR MARKING 1F

Abstract: 320l79l05 320L79L15 symbol of Bc 148 transistor 320L79L12
Contextual Info: LM320L/LM79LXXAC Series 3-Terminal Negative Regulators General Description The LM320L/LM79LXXAC dual marked series of 3-terminal negative voltage regulators features fixed output voltages of −5V, −12V, and −15V with output current capabilities in excess of 100mA. These devices were designed using the latest

Contextual Info: AMP 1 4 7 1 -9 REV 3 1 M A R 2 0 0 0 1 2 LOC CE D IS T REVI SI ONS 16 LTR A 1. INSER TION LOS S: D E S C R IP T IO N DWN DATE RELEASED 20FEB06 1.0 0 dB APVD JWD DF MAX. D 2. PRODUCT AND PROCESSING MUST MEET REQUIREMENTS OF TYCO ELECTRONICS STANDARD 2 3 0 - 7 0 2

15165

Abstract: TRANSISTOR BD 137-10 CF003-03 CFS0303-SB CFS0303-SB-0G00 CFS0303-SB-0G0T PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 PB-CFS0303-SB-00C0 2304 sot 353
Contextual Info: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package September 2007 - Rev 28-Sep-07 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA

underfill

Abstract: with or without underfill AN-1281
Contextual Info: National Semiconductor Application Note 1281 May 2003 Table of Contents Introduction and Package Construction . Flip Chip on Substrate Assembly Considerations .

L4946SQ

Contextual Info: LM4946 LM4946 Output Capacitor-Less Audio Subsystem with Programmable National 3D Literature Number: SNAS335E LM4946 Output Capacitor-Less Audio Subsystem with Programmable National 3D General Description Key Specifications The LM4946 is an audio power amplifier capable of delivering

Contextual Info: MAGX-000040-00500P GaN Wideband 5 W CW / Pulsed Transistor in Plastic Package DC - 4.0 GHz Rev. V2 Features •           GaN on SiC D-Mode Transistor Technology Common-Source Configuration Unmatched, Coupled DC and RF Ideal for Pulsed and CW Applications up to 50 V

celeritek LNA

Abstract: microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS CDQ0303-QS-0G00 Coil Craft 104
Contextual Info: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz