600v 15a
Abstract: igbt 600v 6mbi 6MBI 15LS-060 IGBT 600V 15A
Text: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A
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15LS-060
600v 15a
igbt 600v
6mbi
6MBI 15LS-060
IGBT 600V 15A
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T32 fuse l 250v
Abstract: LPCC-20 LPJ600SP NOS 600 amp fuses LPSRK1712SP LPJ-20SP CDF30J3 EFJ30X-3PB6 fuse base IEC 269 KRPC2000SP
Text: Low Voltage, Branch Circuit Rated Fuses Page 12-14 15-16 Class Fuses Volts CC . . . . . . LP-CC . . . . . . . . . . . . . . . 600V . . . . . 17 FNQ-R . . . . . . . . . . . . . . . KTK-R . . . . . . . . . . . . . . . 600V . . . . . 600V . . . . . 18 19 600V . . . . .
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SA-3-2/10*
SA-10*
SA-15*
SA-20*
SA-30*
SA-1-6/10
SA-3-2/10
SA-10
SA-15
SA-20
T32 fuse l 250v
LPCC-20
LPJ600SP
NOS 600 amp fuses
LPSRK1712SP
LPJ-20SP
CDF30J3
EFJ30X-3PB6
fuse base IEC 269
KRPC2000SP
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600v
Abstract: igbt igbt 600V
Text: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 972 733-1700 - www.fujisemiconductor.com
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15LS-060
600v
igbt
igbt 600V
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mosfet 600V 20A
Abstract: L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera
Text: TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION. Page 1 of 3 TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE TO INCREASE POWER EFFICIENCY 12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce
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releases/2008/power
mosfet 600V 20A
L084
to220sis equivalent
toshiba mosfet
TK12J60U
TK15A60U
mosfet 12A 600V
tk12d60u
TK20A60U
toshiba cmos memory camera
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YG972S6
Abstract: TO-220F torque ips circuit diagram YG972S6R TO-220F JEDEC YG971S6R PH967C6 YG971S6 PH965C6 YA975C6R
Text: Super LLD For PFC circuit Device Type PH965C6 PH967C6 YA971S6R YA972S6R YA975C6R Features Super LLD(For PFC circuit) ‚hp 20A/600V Super LLD(For PFC circuit) ‚hp 30A/600V Super LLD2(For PFC circuit) ‚ho 8A/600V Super LLD2(For PFC circuit) ‚ho 10A/600V
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PH965C6
PH967C6
YA971S6R
YA972S6R
YA975C6R
0A/600V
A/600V
YG972S6
TO-220F torque
ips circuit diagram
YG972S6R
TO-220F JEDEC
YG971S6R
PH967C6
YG971S6
PH965C6
YA975C6R
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igbt 600V
Abstract: 15LS-060 6MBI 15LS-060
Text: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com
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15LS-060
igbt 600V
15LS-060
6MBI 15LS-060
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600v
Abstract: 090-30 Trench 10kw inverter igbt 600V infineon IGBT 1200v 1200V
Text: High-Voltage Products [A] 4 6 8 10 15 20 25 30 40 50 60 75 1200V TRENCHSTOPTM 1200V HS3 Family 600V TRENCHSTOPTM 600V RC-Drives 600V HS3 Family IGBTs – For all Your Hard Switching Requirements INFINEON’S 600V AND 1200V TRENCHSTOP IGBTs are the most efficient devices
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40kHz,
O-247
O-220
O-220
INF-09030
600v
090-30
Trench
10kw inverter
igbt 600V
infineon IGBT 1200v
1200V
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10si6
Abstract: 07.311.4153.0 57.910.5053.0
Text: Modular Fuse Terminal & Feed-through Terminal with Universal Foot 10mnr Wire Size fine stranded 1-10 CSA_ 600V* 16-6 AWG 15A 600V 22-6 AWG 15A UL A p p ro va ls 10mrrr stranded 10-16 fine stranded 1-10 600V 16-6 AWG stranded 10-16 65A ' Ä ® ««&<§ <m
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OCR Scan
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10mnr
10mrrr
10/Si
10si6
07.311.4153.0
57.910.5053.0
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Untitled
Abstract: No abstract text available
Text: IRAM630-1562F Intelligent Power Module for Energy Efficient Compressor Applications 15A, 600V IPM with Integrated PFC and Open Emitter Pins Description International Rectifier's IRAM630-1562F is a 15A, 600V PFC+Inverter Intelligent Power Module IPM with
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IRAM630-1562F
IRAM630-1562F
AN-1049
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Untitled
Abstract: No abstract text available
Text: A130 30 AMP ADAPRTER Voltage / Amperage Rating Maximum Voltage: 600V Maximum Amperage: 15A & 30A Agency Listing N/A Copyright 2007 Test Products International, Inc. Category Rating Insulation Material CAT III 600V Silicone ø4.0 Dimensions Lead Length: 43.30inches
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30inches
1100mm)
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Untitled
Abstract: No abstract text available
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT15D60B APT15D60S 600V 600V 15A 15A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT15D60B
APT15D60S
O-247
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SIDC06D60F6
Abstract: No abstract text available
Text: Preliminary SIDC06D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D60F6 600V IF 15A A This chip is used for:
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SIDC06D60F6
Q67050-A4038A001
4344M,
SIDC06D60F6
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Untitled
Abstract: No abstract text available
Text: ISL9R1560G2_F085 15A, 600V Ultrafast Rectifier Features 15A, 600V Ultrafast Rectifier • High Speed Switching trr=26ns(Typ. @ IF=15A ) The ISL9R1560G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse
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ISL9R1560G2
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4344
Abstract: SIDC06D60F
Text: Preliminary SIDC06D60F Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC06D60F 600V ICn 15A A This chip is used for:
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SIDC06D60F
Q67050-A4038A001
4344E,
4344
SIDC06D60F
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R1560
Abstract: R1560P2 IRF450 ISL9R1560P2 TA49410
Text: [ /Title ISL9 R1560 P2 /Subje ct (15A, 600V Stealth Diode) /Autho r () /Keyw ords (Intersi l Corpor ation, semico nducto r, 15A, 600V Stealth ™ Diode, TO220AC ) /Creato r () /DOCI NFO pdfmar k [ /Page ISL9R1560P2 TM Data Sheet September 2000 File Number
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R1560
O220AC
ISL9R1560P2
ISL9R1560P2
R1560
R1560P2
IRF450
TA49410
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Untitled
Abstract: No abstract text available
Text: Preliminary SIDC06D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC06D60F6 VR 600V IF 15A A This chip is used for:
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SIDC06D60F6
Q67050-A4038sawn
4344M,
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PDF
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Untitled
Abstract: No abstract text available
Text: ISL9R1560G2_F085 15A, 600V Stealth Rectifier Features 15A, 600V Stealth Rectifier • High Speed Switching trr=26ns(Typ. @ IF=15A ) The ISL9R1560G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse
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ISL9R1560G2
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Untitled
Abstract: No abstract text available
Text: SIGC14T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 15A
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SIGC14T60NC
Q67050-A4135A001
7232-M,
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Untitled
Abstract: No abstract text available
Text: SIGC14T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 15A
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SIGC14T60NC
Q67050-A4135A001
7232-M,
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st 85500
Abstract: T90RIA120 T50RIA T50RIA60 T70RIA T70RIA60 T90RIA T90RIA60 ria 120
Text: 2002-07-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 72-079-47 T50RIA60 tyrist 600V 80A 72-080-10 T70RIA60 tyrist 600V 110A 72-080-44 T70RIA120tyrist 1200V 110A 72-080-85 T90RIA60 tyrist 600V 141A
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T50RIA60
T70RIA60
T70RIA120tyrist
T90RIA60
T90RIA120tyrist
I27105
E78996
st 85500
T90RIA120
T50RIA
T70RIA
T90RIA
ria 120
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Untitled
Abstract: No abstract text available
Text: SIGC08T60S 3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE sat • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC08T60S VCE ICn 600V 15A This chip is used for:
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SIGC08T60S
Q67050A4395-A101
L7531D,
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R1560G2
Abstract: IRF450 ISL9R1560G2 TA49410 dt3800
Text: [ /Title ISL9R 1560G 2 /Subjec t (15A, 600V Stealth Diode) /Autho r () /Keyw ords (Intersi l Corpor ation, semico nducto r, 15A, 600V Stealth ™ Diode, TO247) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO ISL9R1560G2 TM Data Sheet September 2000
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1560G
ISL9R1560G2
ISL9R1560G2
R1560G2
IRF450
TA49410
dt3800
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PDF
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SIDC06D60F6
Abstract: No abstract text available
Text: Preliminary SIDC06D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D60F6 600V IF 15A A This chip is used for:
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SIDC06D60F6
Q67050-A4038A001
4344M,
SIDC06D60F6
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PDF
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SIDC06D60F6
Abstract: No abstract text available
Text: Preliminary SIDC06D60F6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D60F6 600V IF 15A A This chip is used for:
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SIDC06D60F6
Q67050-A4038A001
4344M,
SIDC06D60F6
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PDF
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