IKW40N120H3
Abstract: IKW40N60 30100 transistor IKW25N120H3 welding inverter IKW40N120T2 Induction Heating Resonant Inverter IGW40N120H3 IKW50N60T IKW40N60H3
Text: Discrete IGBT Selection Tree YES IGBT NO Single IGBT IGBT + Anti-Parallel Diode Soft Hard Diode Commutation Frequency Range 2 – 20 kHz TRENCHSTOP 20 – 100 kHz HighSpeed 2 – 20 kHz TRENCHSTOP™ Duopack 8 – 60 kHz RC series (monolythic) 2 – 20 kHz
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IGpccN60H3
IGpccN120H2
IGpccN120H3
IGpccN60T.
IGpccN100T
IGpccT120.
IGpccN120
IHpccN60T.
IHpccT60.
IHpccN90T
IKW40N120H3
IKW40N60
30100 transistor
IKW25N120H3
welding inverter
IKW40N120T2
Induction Heating Resonant Inverter
IGW40N120H3
IKW50N60T
IKW40N60H3
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NIA050SA-P925F33 preliminary datasheet NPC Application flowNPC0 600V/50A General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 8Ω 8Ω Vout= 230 VAC Figure 1. Buck IGBT BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 8Ω 8Ω Figure 2.
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10-FZ06NIA050SA-P925F33
00V/50A
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Untitled
Abstract: No abstract text available
Text: 10-xx06NIA100SA-M135Fxx NPC Application flowNPC 1 600V/100A General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 8Ω 8Ω Vout= 230 VAC Figure 1. Buck IGBT BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 8Ω 8Ω Figure 2. Typical average static loss as a function of
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10-xx06NIA100SA-M135Fxx
00V/100A
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NRA084FP02-P969F78 10-PZ06NRA084FP02-P969F78Y NPC Application flowNPC 0 600V/75A & 99mΩ PS* General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff + 15 V - 15 V 4Ω 4Ω Vout= 230 VAC Figure 1. Buck MOSFET+IGBT BOOST = = = = VGEon VGEoff Rgon Rgoff
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10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
00V/75A
350nS
16kHz
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Untitled
Abstract: No abstract text available
Text: F206NIA300SA-M106F preliminary datasheet NPC Application flowNPC2 600V/300A General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4Ω Vout= 230 VAC Figure 1. Buck IGBT BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4Ω Figure 2.
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F206NIA300SA-M106F
00V/300A
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Untitled
Abstract: No abstract text available
Text: 10-FZ12NMA080SH-M269F datasheet mixed voltage NPC Application flowmNPC0 1200V/80A & 600V/50A General conditions VGEon VGEoff Rgon Rgoff half bridge IGBT = = = = 15 V -15 V 8Ω 8Ω Vout= 230 VAC Figure 1. half bridge IGBT Typical average static loss as a function of
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10-FZ12NMA080SH-M269F
200V/80A
00V/50A
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Untitled
Abstract: No abstract text available
Text: F206NIA200SA-M105F preliminary datasheet NPC Application flowNPC2 600V/200A General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4Ω Vout= 230 VAC Figure 1. Buck IGBT BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4Ω Figure 2.
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F206NIA200SA-M105F
00V/200A
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Untitled
Abstract: No abstract text available
Text: 10-FY06BIA050SG-M523E18 preliminary datasheet DC Boost Application flowSOL 1 BI 600V/50A General conditions BOOST = = = = VGEon VGEoff Rgon Rgoff Figure 1. IGBT 15 V -15 V 4Ω 4Ω Figure 2. Typical average static loss as a function of input current IiRMS
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10-FY06BIA050SG-M523E18
00V/50A
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Untitled
Abstract: No abstract text available
Text: 10-F006PPA020SB-M685B preliminary datasheet Output Inverter Application flowPIM0+PFC 2nd 600V/20A General conditions 3phase SPWM VGEon = 15 V VGEoff = -15 V Rgon = 16 Ω Rgoff = 16 Ω IGBT Figure 1 Typical average static loss as a function of output current
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10-F006PPA020SB-M685B
00V/20A
20kHz
160kHz
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Untitled
Abstract: No abstract text available
Text: 10-F006PPA015SB-M684B preliminary datasheet Output Inverter Application flowPIM0+PFC 2nd 600V/15A General conditions 3phase SPWM VGEon = 15 V VGEoff = -15 V Rgon = 16 Ω Rgoff = 16 Ω IGBT Figure 1 FWD Figure 2 Typical average static loss as a function of output current
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10-F006PPA015SB-M684B
00V/15A
20kHz
160kHz
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Untitled
Abstract: No abstract text available
Text: V23990-P723-F04-PM final datasheet V23990-P723-F04-01-19 fastPACK 0 2nd gen, 600V/ 60A Output inverter application Phase shifted ZVS, Vgeon= 15 V Vgeoff=0V Rgon= Figure 1. Typical static loss of shifted switch as a function of output current IGBT Figure 2.
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V23990-P723-F04-PM
V23990-P723-F04-01-19
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NBA075SA-P916L33 preliminary datasheet DC Boost Application flowBOOST0 600V/75A General conditions BOOST = 15 V = 15 V = 8Ω = 8Ω VGEon VGEoff Rgon Rgoff Figure 1. Typical average static loss as a function of input current IiRMS INPUT BOOST IGBT
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10-FZ06NBA075SA-P916L33
00V/75A
Tjmax-25Â
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IC 7415
Abstract: APT13GP120K mosfet 600V 50A
Text: APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT13GP120K
O-220
IC 7415
APT13GP120K
mosfet 600V 50A
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Untitled
Abstract: No abstract text available
Text: 30-F206NBA200SG-M235L25 preliminary datasheet DC Boost Application flowBOOST 2 600V/200A General conditions BOOST = = = = VGEon VGEoff Rgon Rgoff Figure 1. IGBT 15 V -15 V 4Ω 4Ω Figure 2. Typical average static loss as a function of input current IiRMS
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30-F206NBA200SG-M235L25
00V/200A
20nditions:
Tjmax-25Â
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Untitled
Abstract: No abstract text available
Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT25GP90B
O-247
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Untitled
Abstract: No abstract text available
Text: APT15GP90K APT15GP90K TYPICAL PERFORMANCE CURVES 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90K
O-220
APT15GP90
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Untitled
Abstract: No abstract text available
Text: APT15GP90B TYPICAL PERFORMANCE CURVES APT15GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90B
O-247
APT15GP4
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Untitled
Abstract: No abstract text available
Text: APT15GP90B TYPICAL PERFORMANCE CURVES APT15GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90B
O-247
APT154
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T0-247
Abstract: APT13GP120B igbt driver 600V 13A 600V TO247
Text: APT13GP120B APT13GP120B TYPICAL PERFORMANCE CURVES 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT13GP120B
O-247
T0-247
APT13GP120B
igbt driver 600V
13A 600V TO247
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Untitled
Abstract: No abstract text available
Text: APT15GP90K APT15GP90K TYPICAL PERFORMANCE CURVES 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90K
O-220
APT15GP
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APT15GP90K
Abstract: No abstract text available
Text: APT15GP90K APT15GP90K TYPICAL PERFORMANCE CURVES 900V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90K
O-220
APT15GP90K
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D-6020
Abstract: APT25GP90B T0-247
Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT25GP90B
O-247
D-6020
APT25GP90B
T0-247
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Untitled
Abstract: No abstract text available
Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT25GP90B
O-247
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IRG48C20F
Abstract: IRG49C30F ir igbt cpv364m4f QAW0 TOOC OA400
Text: N i H 'N A t i O N A l k f .'T .F If .S International IO R Rectifier IGBTs a kMSivesiAîi ¡ír is v : The IGBT Navigator KEY: COLOR COOING: EXISTING Products • m m m production in last 6-9 months Part number FOD Document # Date for Date for Production Samples
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IRG4P254S
IRG4PC30U
IRG4PC40U
0OO12OU
QA2OOOO120S
A500D0120U
QAS00001206
OA400
D12CU
QA9Q00012SU
IRG48C20F
IRG49C30F
ir igbt
cpv364m4f
QAW0
TOOC
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