Untitled
Abstract: No abstract text available
Text: APTCV60HM70BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 70m max @ Tj = 25°C CoolMOS™ Q5: VDSS = 600V
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APTCV60HM70BT3G
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Untitled
Abstract: No abstract text available
Text: APTCV60HM70BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C CoolMOS™ Q5: VDSS = 600V
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APTCV60HM70BT3G
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Untitled
Abstract: No abstract text available
Text: APTCV60HM70BT3G Full – Bridge + boost chopper CoolMOS & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C CoolMOS™ Q5: VDSS = 600V
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APTCV60HM70BT3G
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Untitled
Abstract: No abstract text available
Text: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C
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APTGV50H60BT3G
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APTGV50H60BT3G
Abstract: No abstract text available
Text: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C
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APTGV50H60BT3G
APTGV50H60BT3G
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Untitled
Abstract: No abstract text available
Text: APTGV50H60BT3G Full – Bridge + boost chopper NPT & Trench + Field Stop IGBT3 Power module Trench & Field Stop IGBT3 Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q5: VDSS = 600V RDSon = 45m max @ Tj = 25°C
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APTGV50H60BT3G
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1000V 20A transistor
Abstract: fast recovery diode 600v 1200A 500V 100A thyristors diode 500A diode IC data book free download 600v RM400HA-34S DIODE 200A 600V fast recovery
Text: Powerex Fast Recovery Single Diode Modules 7/3/2003 500V 600V 600V 1000V 1200V CS340602 20A Ic A *click on the products for additional information 1200V 1400V 25A CS240650 QRS0620T30 250A 50A 100A CS241210 200A 35A RM35HG-34S CS240610 CS241020 QRS1220T30
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CS340602
CS341202
RM25HG-24S
CS241250
CS240650
CS240610
CS241210
QRS0620T30
CS241020
QRS1220T30
1000V 20A transistor
fast recovery diode 600v 1200A
500V 100A thyristors
diode 500A
diode
IC data book free download
600v
RM400HA-34S
DIODE 200A 600V
fast recovery
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25A 1200V
Abstract: PM100RLA120 PM150CLA120 PM75CLA120 PM75CLA060 PM75CLB120 transistor 600V 75A PM100CLA060 PM150CLA060 PM200CLA060
Text: Powerex L-Series IPM Grid 7/3/2003 VCES 25A 1200V PM25CLA120 PM25CLB120 600V 1200V Seven-Pack Six-Pack 600V Config *click on the products for additional information PM25RLA120 PM25RLB120 50A 75A 100A 150A 200A 300A PM50CLA060 PM50CLB060 PM75CLA060 PM75CLB060
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PM25RLA120
PM25RLB120
PM75CLA060
PM75CLB060
PM100CLA060
PM150CLA060
PM200CLA060
PM300CLA060
PM50CLA120
PM50CLB120
25A 1200V
PM100RLA120
PM150CLA120
PM75CLA120
PM75CLA060
PM75CLB120
transistor 600V 75A
PM100CLA060
PM150CLA060
PM200CLA060
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Untitled
Abstract: No abstract text available
Text: SCT25N60FD Triac 600V, 25A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Features Repetitive Peak Off-State Voltage : VDRM=600V
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SCT25N60FD
O-220F-3L
SCT25N60
KSD-S0O006-000
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Untitled
Abstract: No abstract text available
Text: SCT25N60P Triac 600V, 25A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 „ Features „ Repetitive Peak Off-State Voltage : VDRM=600V
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SCT25N60P
O-220AB-3L
SCT25N60
KSD-S0P006-000
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Untitled
Abstract: No abstract text available
Text: SCT25N60P Triac 600V, 25A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 y Features y Repetitive Peak Off-State Voltage : VDRM=600V
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SCT25N60P
O-220AB-3L
SCT25N60
KSD-S0P006-000
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Untitled
Abstract: No abstract text available
Text: SCT25N60FD Triac 600V, 25A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Features Repetitive Peak Off-State Voltage : VDRM=600V
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SCT25N60FD
O-220F-3L
SCT25N60
KSD-S0O006-000
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R6025FNZ1
Abstract: No abstract text available
Text: R6025FNZ1 Datasheet Nch 600V 25A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.18W ID 25A PD 150W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R6025FNZ1
O-247
R1102A
R6025FNZ1
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Untitled
Abstract: No abstract text available
Text: BUCCANEER 900 Series Buccaneer SPECIFICATION Mechanical: BUCCANEER Electrical: No Poles: 2, 3 4, 5 7 10 Current Rating: 32A 30A, CSA 32A 25A, CSA 32A 10A 25A, CSA* Voltage Rating: 600V ac/dc 600V ac/dc 430V ac/dc 250V ac/dc Contact Resistance: <10mΩ initial
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to10AWG)
18AWG)
PX0911-PX0921
7-13mm
PXA911-PXA921
16-18mm
14-16mm
PX0911
PX0921
PXA911
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Untitled
Abstract: No abstract text available
Text: R6025FNZ Nch 600V 25A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.18W ID 25A PD 150W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.
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R6025FNZ
R1102A
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F8JZ47
Abstract: f8gz47 f8gz47 symbol SF8JZ47 SF8GZ47
Text: SF8GZ47,SF8JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8GZ47,SF8JZ47 Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400, 600V : VRRM = 400, 600V Average On−State Current : IT AV = 8A
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SF8GZ47
SF8JZ47
SF8GZ47
400transportation
F8JZ47
f8gz47
f8gz47 symbol
SF8JZ47
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SF8j41
Abstract: SF8G41 SF8G41A SF8J41A
Text: SF8G41A,SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A,SF8J41A Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V Average On−State Current : IT AV = 8A
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SF8G41A
SF8J41A
SF8G41A
SF8j41
SF8G41
SF8J41A
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SF8G41A
Abstract: SF8J41A
Text: SF8G41A, SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A, SF8J41A MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 8A
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SF8G41A,
SF8J41A
SF8G41A
SF8G41A
SF8J41A
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12n60d1c
Abstract: 12n60d1 600V Current Sensing N-Channel IGBT equivalent 12n60d1c ICL7667 HGTB12N60D1C 10A 600V MOS 12A, 600V Current Sensing N-Channel IGBT HGTB12N60D1C equivalent TS-001AA Package
Text: S E M I C O N D U C T O R HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT April 1995 Features • • • • • • • Package 12A, 600V rDS ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27Ω
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HGTB12N60D1C
100ns
100oC.
TS-001AA
O-220)
HGTB12N60D1C
ICL7667
12n60d1c
12n60d1
600V Current Sensing N-Channel IGBT
equivalent 12n60d1c
ICL7667
10A 600V MOS
12A, 600V Current Sensing N-Channel IGBT
HGTB12N60D1C equivalent
TS-001AA Package
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TOSHIBA Thyristor
Abstract: SF8G48 SF8J48 USF8G48 USF8J48
Text: SF8G48,SF8J48,USF8G48,USF8J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF8G48, SF8J48, USF8G48, USF8J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage: VDRM=400V,600V Repetitive Peak Reverse Voltage: VRRM=400V,600V Average On-State Current: IT AV =8A
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SF8G48
SF8J48
USF8G48
USF8J48
SF8G48,
SF8J48,
USF8G48,
SF8J48
TOSHIBA Thyristor
USF8J48
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SF8G41
Abstract: SF8G41A SF8J41 SF8J41A
Text: SF8G41A,SF8J41A TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8G41A,SF8J41A Unit: mm MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V l Average On−State Current : IT AV = 8A
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SF8G41A
SF8J41A
SF8G41A
SF8G41
SF8J41
SF8J41A
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Untitled
Abstract: No abstract text available
Text: r n o le x WIRE 10 BARRIER K B TERMINAL BLOCKS Series 4HRBi Style Spacing BEAU Terminal Blocks Rating Page .250 10A, 300V 214, 215 61 .250 10A, 300V 216,217 63 .438 25A, 600V 218, 219 .438 25A, 600V 220, 221 .500 45A, 600V 222, 223 69 .325 20A, 300V 224, 225
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Untitled
Abstract: No abstract text available
Text: Connector Blocks Series Spacing Style Rating Page C15 .315” 10 A, 250V 12 4 ,1 2 5 C15 .315” 10A, 250V 12 4 ,1 2 5 C 40 .394” 16A, 125 V 12 6 ,1 2 7 .394” 16A, 250V 12 6 ,1 2 7 .472” 25A, 600V 12 8 ,1 2 9 .472” 25A, 600V 12 8 ,1 2 9 .591” 40A, 600V
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Untitled
Abstract: No abstract text available
Text: DESIGN UNITS METRIC nn [INCHES] -4 | P REVISION — 1-FIRST ANGLE PRDJECTIDN REV. DESCRPTIDN DATE [ P BY. J l ECN ND. U IBmaenggannrl DP2 IEC 6 059 4 7 -7 -1 630V 2.5mm*. 600V 25A 22~12AWG I C T \Iw Med. [„ CTInoJ 5.1 NOTES: 1. Rating: UL 600V 25A IEC 630V 24A
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12AWG
DP25-GY
DP25-BU
P25-LK
DP25-GY/DP25-BU/DP25-LK
QJ/1208
ON/1204
QE/1201
04E17
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