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    600V 25A ULTRAFAST DIODE APT Search Results

    600V 25A ULTRAFAST DIODE APT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    600V 25A ULTRAFAST DIODE APT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET 25A 600V

    Abstract: APT25GP120BDF1 T0-247 IC-125A mosfet 1200V 25A
    Text: APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power


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    PDF APT25GP120BDF1 O-247 MOSFET 25A 600V APT25GP120BDF1 T0-247 IC-125A mosfet 1200V 25A

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    Abstract: No abstract text available
    Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    PDF APT25GP90BDF1 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    PDF APT25GP90BDF1 O-247

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT25GP120BDF1 APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power


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    PDF APT25GP120BDF1 O-247

    APT25GP90BDF1

    Abstract: T0-247 T0247 package NF 833
    Text: APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    PDF APT25GP90BDF1 O-247 APT25GP90BDF1 T0-247 T0247 package NF 833

    APT25GP90BDF1

    Abstract: No abstract text available
    Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    PDF APT25GP90BDF1 O-247 APT25GP90BDF1

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90BDF1 TYPICAL PERFORMANCE CURVES APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    PDF APT25GP90BDF1 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT25GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT25GP120BDQ1 APT25GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


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    PDF APT25GP120BDQ1 APT25GP120BDQ1 APT25GP120BDQ1G*

    APT25GP120BDQ1

    Abstract: APT25GP120BDQ1G 600V 25A Ultrafast Diode 600V 25A Ultrafast Diode APT APT10078BLL
    Text: APT25GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT25GP120BDQ1 APT25GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


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    PDF APT25GP120BDQ1 APT25GP120BDQ1 APT25GP120BDQ1G* APT25GP120BDQ1G 600V 25A Ultrafast Diode 600V 25A Ultrafast Diode APT APT10078BLL

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    Abstract: No abstract text available
    Text: APT25GP90BDQ1 G 900V TYPICAL PERFORMANCE CURVES APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


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    PDF APT25GP90BDQ1 APT25GP90BDQ1 APT25GP90BDQ1G*

    IC 7476

    Abstract: 7476 IC datasheet IC 7476 datasheet datasheet IC 7476 APT25GP90BDQ1G 7476 data sheet 7476 datasheet APT25GP90BDQ1
    Text: APT25GP90BDQ1 G 900V TYPICAL PERFORMANCE CURVES APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


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    PDF APT25GP90BDQ1 APT25GP90BDQ1 APT25GP90BDQ1G* Volta10) IC 7476 7476 IC datasheet IC 7476 datasheet datasheet IC 7476 APT25GP90BDQ1G 7476 data sheet 7476 datasheet

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT50GT60BRDL G 600V APT50GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


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    PDF APT50GT60BRDL O-247

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT50GT60BRDL G 600V APT50GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


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    PDF APT50GT60BRDL O-247

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT50GT60BRDL G 600V APT50GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.


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    PDF APT50GT60BRDL

    IC 7436

    Abstract: APT50GP60B2DF2
    Text: APT50GP60B2DF2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    PDF APT50GP60B2DF2 IC 7436 APT50GP60B2DF2

    APT50GP60JDF2

    Abstract: APT50G
    Text: APT50GP60JDF2 600V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    PDF APT50GP60JDF2 APT50GP60JDF2 APT50G

    APT10078BLL

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT25GT120BRDL G 1200V APT25GT120BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT TO -2 47 The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior


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    PDF APT25GT120BRDL APT10078BLL

    D-6020

    Abstract: APT25GP90B T0-247
    Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    PDF APT25GP90B O-247 D-6020 APT25GP90B T0-247

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    PDF APT25GP90B O-247

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    PDF APT25GP90B O-247

    Untitled

    Abstract: No abstract text available
    Text: APT25GP90B TYPICAL PERFORMANCE CURVES APT25GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


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    PDF APT25GP90B O-247

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT50GP60LDL G APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high


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    PDF APT50GP60LDL O-264

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT50GP60LDL G APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high


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    PDF APT50GP60LDL O-264

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT50GP60LDL G APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high


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    PDF APT50GP60LDL