600V 4A MOSFET Search Results
600V 4A MOSFET Result Highlights (5)
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Description |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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600V 4A MOSFET Datasheets Context Search
Catalog Datasheet |
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Contextual Info: R6004ENJ Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source |
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R6004ENJ SC-83) R1102A | |
zener diode 4.7 vContextual Info: STP4NM60 N-CHANNEL 600V - 1.4Ω - 4A TO-220 Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP4NM60 600V < 1.6 Ω 4A TYPICAL RDS(on) = 1.4 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY |
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O-220 STP4NM60 O-220 zener diode 4.7 v | |
Contextual Info: R6004END Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 20W (2) CPT3 (SC-63) <SOT-428> (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source |
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R6004END SC-63) OT-428> R6004E R1102A | |
Contextual Info: R6004END Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 20W (2) CPT3 (SC-63) <SOT-428> (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source |
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R6004END SC-63) OT-428> R6004E R1102A | |
Contextual Info: R6004ENJ Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.980W ID 4A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source |
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R6004ENJ SC-83) R1102A | |
Contextual Info: R6004ENX Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. |
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R6004ENX 980mW O-220FM R1102A | |
STL4NM60Contextual Info: STL4NM60 N-CHANNEL 600V - 1.5Ω - 4A PowerFLAT MDmesh Power MOSFET PROPOSAL DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STL4NM60 600V < 1.8Ω 4A TYPICAL RDS(on) = 1.5Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE |
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STL4NM60 STL4NM60 | |
Contextual Info: R6004ENX Nch 600V 4A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. |
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R6004ENX 980mW O-220FM R1102A | |
mosfet 337
Abstract: Vdss 2000V
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OCR Scan |
FS4KM-12 mosfet 337 Vdss 2000V | |
P4N60
Abstract: F4N60
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PJP4N60 PJF4N60 O-220AB ITO-220AB O-220AB 2002/95/EC ITO-220AB MIL-STD-750 P4N60 F4N60 | |
FAN7171
Abstract: SOIC127P600X175-8M FAN7171M FAN7371 JESD51-2 Q100 fan71 fan7371 application
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FAN7171 SOIC127P600X175-8M FAN7171M FAN7371 JESD51-2 Q100 fan71 fan7371 application | |
fan7371 application
Abstract: FAN7171MX_F085 fan7371
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FAN7171 fan7371 application FAN7171MX_F085 fan7371 | |
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTA7N60PM IXTP7N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol |
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IXTA7N60PM IXTP7N60PM O-220 7N60P 06-17-08-D | |
R460p2
Abstract: ISL9R460S2 ISL9R460S3S ISL9R460S3ST TA49408 TB334 ISL9R460P2
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ISL9R460P2, ISL9R460S2, ISL9R460S3S ISL9R460S2 ISL9R460S3S 175oC R460p2 ISL9R460S3ST TA49408 TB334 ISL9R460P2 | |
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Contextual Info: AP04N70BI RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS 600V Fast Switching Characteristic RDS ON 2.4 Simple Drive Requirement ID 4A Description Advanced Power MOSFETs from APEC provide the |
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AP04N70BI O-220CFM | |
R460PContextual Info: ISL9R460P2, ISL9R460S2, ISL9R460S3S 4A, 600V Stealth Diode General Description Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . t b / ta > 3 The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are Stealth™ diodes optimized for low loss performance in |
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ISL9R460P2, ISL9R460S2, ISL9R460S3S ISL9R460S2 ISL9R460S3S R460P | |
AOTF4N60
Abstract: AOT4N60
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AOT4N60/AOTF4N60 AOT4N60 AOTF4N60 O-220 O-220F AOTF4N60 AOT4N60 | |
BLV4N60
Abstract: mosfet 600V N-CHANNEL
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BLV4N60 BLV4N60 mosfet 600V N-CHANNEL | |
BLV4N60Contextual Info: BLV4N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 600V • Fast Switching RDS ON 2.2Ω Ω • Simple Drive Requirements ID 4A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. |
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BLV4N60 BLV4N60 | |
Contextual Info: AOT4N60/AOTF4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. |
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AOT4N60/AOTF4N60 AOT4N60 AOTF4N60 AOT4N60L AOTF4N60L O-220 O-220F AOTF4N60 | |
Contextual Info: Advance Technical Information Polar3 TM HiPerFETTM Power MOSFETs VDSS ID25 IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 4A Ω ≤ 2.2Ω TO-252 (IXFY) G S Symbol Test Conditions D (Tab) |
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IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 O-252 O-263 IXFY4N60P3 4N60P3 | |
Contextual Info: AOT4N60/AOTF4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. |
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AOT4N60/AOTF4N60 AOT4N60 AOTF4N60 AOT4N60L AOTF4N60L O-220 O-220F AOTF4N60 | |
AOTF4N60L
Abstract: AOT4N60
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AOT4N60/AOTF4N60 AOT4N60 AOTF4N60 AOT4N60L AOTF4N60L O-220 O-220F AOT4N60 AOTF4N60L | |
Contextual Info: AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC |
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AOD4N60/AOI4N60/AOU4N60 AOD4N60 AOI4N60 AOU4N60 O251A |