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    600V GAN Search Results

    600V GAN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    600V GAN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T32 fuse l 250v

    Abstract: LPCC-20 LPJ600SP NOS 600 amp fuses LPSRK1712SP LPJ-20SP CDF30J3 EFJ30X-3PB6 fuse base IEC 269 KRPC2000SP
    Text: Low Voltage, Branch Circuit Rated Fuses Page 12-14 15-16 Class Fuses Volts CC . . . . . . LP-CC . . . . . . . . . . . . . . . 600V . . . . . 17 FNQ-R . . . . . . . . . . . . . . . KTK-R . . . . . . . . . . . . . . . 600V . . . . . 600V . . . . . 18 19 600V . . . . .


    Original     		PDF SA-3-2/10* SA-10* SA-15* SA-20* SA-30* SA-1-6/10 SA-3-2/10 SA-10 SA-15 SA-20 T32 fuse l 250v LPCC-20 LPJ600SP NOS 600 amp fuses LPSRK1712SP LPJ-20SP CDF30J3 EFJ30X-3PB6 fuse base IEC 269 KRPC2000SP

    HRC Fuse HOLDER

    Abstract: 400 amp hrc fuse HRC fuse CM20CF HRC Fuse 250V 20A HRC fuse 400a C30F APPLICATION OF hrc fuse 355 amp 660v hrc fuse 100CF
    Text: Product Catalog Canadian Fuses & Holders Circuit Protection Table of Contents General Catalog Contents Page Canadian Fuses & Accessories Standard Code Fuses 250V & 600V Fuse Holders KOS/KON/PONC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .93


    Original     		PDF 600Vac C30BS C30FBS C60BS C60FBS HRC Fuse HOLDER 400 amp hrc fuse HRC fuse CM20CF HRC Fuse 250V 20A HRC fuse 400a C30F APPLICATION OF hrc fuse 355 amp 660v hrc fuse 100CF

    Demands for High-efficiency Magnetics in GaN Power Electronics

    Abstract: 20n60cfd TPH3006
    Text: APEC 2014, Fort Worth, Texas, March 16-20, 2014, IS2.5.3 Demands for High-efficiency Magnetics in GaN Power Electronics Yifeng Wu, Transphorm Inc. Table of Contents 1. 1st generation 600V GaN-on-Si HEMT properties and performance 2. GaN HEMT high-frequency application examples


    Original     		PDF 5W/600V 9W/600V Demands for High-efficiency Magnetics in GaN Power Electronics 20n60cfd TPH3006

    400A GenX3TM IGBTs in New Proprietary SMPD Power Packages

    Abstract: IXYS smpd IXYS MMIX1G320N60B3 solar ups features and classification
    Text: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Introduces 600V/400A GenX3TM IGBTs in New Proprietary SMPD Power Packages Milpitas, CA. and Biel, Switzerland. October 12, 2010 – IXYS Corporation NASDAQ:IXYS is pleased to


    Original     		PDF 00V/400A MMIX1G320N60B3 400A GenX3TM IGBTs in New Proprietary SMPD Power Packages IXYS smpd IXYS solar ups features and classification

    Holders

    Abstract: No abstract text available
    Text: CH Series Modular Fuse Holders Class J Class J – 600V 1-60A Features: • Choice of Indication: –easyID window to view indicator on Cooper Bussmann LPJ- amp SPI fuses. –Neon lamp open fuse indicator. • Comes in standard 1-, 2- & 3-Pole ganged assemblies


    Original     		PDF 600Vac/dc BU-SB08182 Holders

    CH30J

    Abstract: 2A1073 CH60J3 CH60-J3 30a dual pole E14853 CH60J3I 460V CH30J2 460VAC
    Text: CH Series Modular Fuse Holders Class J Class J – 600V 1-60A Features: • Choice of Indication: –easyID window to view indicator on Cooper Bussmann LPJ- amp SPI fuses. –Neon lamp open fuse indicator. • Comes in standard 1-, 2- & 3-Pole ganged assemblies


    Original     		PDF 600Vac/dc BU-SB08182 CH30J 2A1073 CH60J3 CH60-J3 30a dual pole E14853 CH60J3I 460V CH30J2 460VAC

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6004WDPK R07DS0897EJ0300 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6005WDPK R07DS0901EJ0200 PRSS0004ZE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


    Original     		PDF RJS6005WDPK R07DS0901EJ0201 PRSS0004ZE-A

    RJS6004TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6004TDPP-EJ R07DS0896EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ

    RJS6005TDPP-EJ

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


    Original     		PDF RJS6005TDPP-EJ R07DS0900EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6005TDPP-EJ

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60V0DPM R07DS0669EJ0200 Rev.2.00 Apr 02, 2014 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60V0DPM R07DS0669EJ0200 PRSS0003ZA-A therma2886-9022/9044

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR2PM-12RE R07DS1239EJ0200 Previous: REJ03G1468-0100 Rev.2.00 Dec 24, 2014 600V - 2A - Triac Low Power Use Features • Insulated Type • Planar Passivation Type • The product guaranteed maximum junction temperature 150°C. • IT (RMS) : 2 A


    Original     		PDF BCR2PM-12RE R07DS1239EJ0200 REJ03G1468-0100) PRSS0003AA-B O-220F BCR2PM-12RE Non-repe2886-9022/9044

    BCR12PM

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR12PM-12LC R07DS1242EJ0400 Previous: REJ03G1261-0300 Rev.4.00 Dec 24, 2014 600V – 12A - Triac Medium Power Use Features • • • • • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Passivation Type


    Original     		PDF BCR12PM-12LC R07DS1242EJ0400 REJ03G1261-0300) PRSS0003AA-B O-220F R07DS1242EJ0400 BCR12PM

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0200 Rev.2.00 Apr 02, 2014 Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60V0DPM-80 R07DS1036EJ0200 PRSS0003ZD-A th2886-9022/9044

    BCR6CM-12RA

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR6CM-12RA R07DS1150EJ0100 Rev.1.00 Jan 24, 2014 600V - 6A - Triac Medium Power Use Features • IT RMS : 6 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline


    Original     		PDF BCR6CM-12RA R07DS1150EJ0100 PRSS0004AG-A O-220AB) BCR6CM-12RA

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6011DJA 600V - 0.1A - MOS FET High Speed Power Switching R07DS0873EJ0200 Rev.2.00 Jan 28, 2014 Features • Low on-resistance RDS on = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting


    Original     		PDF RJK6011DJA R07DS0873EJ0200 PRSS0003DA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60T04DPQ-A1 600V - 30A - IGBT Application:Current resonance circuit R07DS1191EJ0200 Rev.2.00 Apr 02, 2014 Features • Optimized for current resonance application • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60T04DPQ-A1 R07DS1191EJ0200 PRSS0003ZH-A O-247A) Ga2886-9022/9044

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6011DJE R07DS1153EJ0400 Previous: REJ03G1577-0300 Rev.4.00 Jan 28, 2014 600V - 0.1A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C) • Low drive current


    Original     		PDF RJK6011DJE R07DS1153EJ0400 REJ03G1577-0300) PRSS0003DC-A

    BCR20CM-12LB

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR20CM-12LB R07DS1151EJ0100 Rev.1.00 Jan 29, 2014 600V - 20A - Triac Medium Power Use Features • IT RMS : 20 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III :30 mA(20mA) Note6 • Tj: 150 °C • Planar Passivation Type • Non-Insulated Type


    Original     		PDF BCR20CM-12LB R07DS1151EJ0100 BCR20CM-12LB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR25CM-12LB R07DS1152EJ0100 Rev.1.00 Jan 29, 2014 600V - 25A - Triac Medium Power Use Features • IT RMS : 25 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 50 mA • Tj: 150 °C • Planar Passivation Type • Non-Insulated Type


    Original     		PDF BCR25CM-12LB R07DS1152EJ0100

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR1AM-12A R07DS0177EJ0400 Rev.4.00 Jul 31, 2014 600V-1A-Triac Low Power Use Features • IT RMS : 1 A • VDRM : 600 V • IFGTI , IRGTI, IRGT III : 7 mA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A


    Original     		PDF BCR1AM-12A R07DS0177EJ0400 00V-1A-Triac PRSS0003EA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BCR5CM-12RA R07DS1149EJ0100 Rev.1.00 Jan 23, 2014 600V - 5A - Triac Medium Power Use Features • IT RMS : 5 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 15 mA (10 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline


    Original     		PDF BCR5CM-12RA R07DS1149EJ0100 PRSS0004AG-A O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: GaN 600V SBD < m Nihon Inter Electronics Corporation Gallium Nitride 600V SBD Vr-V Characteristics H //// -PFC Circuit Applied Reverse Voltage [V] -Reduce VF rise due to current collapse to below 20% Recovery waveform GaN vs Si Si GaN FSU05A60 SÌ-FRD/5A/600V


    OCR Scan     		PDF FSU05A60 -FRD/5A/600V) 40ns/div FSA06A60 GaN-SBD/6A/600V) FSA04B60 O-220 FSA06B60