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    CEM8434

    Abstract: No abstract text available
    Text: March 1998 P-Channel Enhancement Mode Field Effect Transistor FEATURES • -2 0 V , -6.5A, RDS ON =35mQ @ V gs =-4.5V. R ds(on)=60itiQ @ V gs =-2.5V. D D D • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.


    OCR Scan     		CEM8434 35itiQ 60itiQ CEM8434 PDF