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    60V N-CHANNEL LOGIC LEVEL QFET Search Results

    60V N-CHANNEL LOGIC LEVEL QFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    60V N-CHANNEL LOGIC LEVEL QFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN7260

    Abstract: AN7254 RFW2N06RLE TB334 Logic Level N-Channel Power MOSFET
    Text: RFW2N06RLE Data Sheet January 2002 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET Features • 2A, 60V The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching


    Original     		RFW2N06RLE RFW2N06RLE AN7260 AN7254 TB334 Logic Level N-Channel Power MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD4N06L, RFD4N06LSM Data Sheet 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs January 2002 Features • 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5 volt driving sources in


    Original     		RFD4N06L, RFD4N06LSM RFD4N06LSM TA09520. TB334 RFD4N06LSM9A O-252 PDF

    AN7254

    Abstract: RFD4N06L RFD4N06LSM TA09520 TB334
    Text: RFD4N06L, RFD4N06LSM Data Sheet 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs January 2002 Features • 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5 volt driving sources in


    Original     		RFD4N06L, RFD4N06LSM RFD4N06LSM TA09520. AN7254 RFD4N06L TA09520 TB334 PDF

    0N06L

    Abstract: RFP30N06
    Text: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil


    Original     		RFP30N06LE, RF1S30N06LESM 0N06L RFP30N06 PDF

    5n06

    Abstract: 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3
    Text: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs [ /Title RFD1 5N06L E, RFD15 N06LE SM /Subject (15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil


    Original     		RFD15N06LE, RFD15N06LESM 5N06L RFD15 N06LE 5n06 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3 PDF

    5N05

    Abstract: No abstract text available
    Text: RFP15N05L, RFP15N06L Data Sheet July 1999 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs [ /Title RFP1 5N05L , RFP15 N06L /Subject (15A, 50V and 60V, 0.140 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation,


    Original     		RFP15N05L, RFP15N06L 5N05L RFP15 TA0522. 5N05 PDF

    6407D

    Abstract: AN9321 HUF76407D3 HUF76407D3S HUF76407D3ST TB334 407D3 106E3 76407D
    Text: [ /Title HUF7 6407D HUF76 407D3 /Subjec t (60V, 0.072 Ohm, 4A, NChann HUF76407D3, HUF76407D3S Data Sheet /Keyw ords (Fairch Corpor ation, Chann Logic Level UltraF Power MOSF ET, 4664.2 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging


    Original     		6407D HUF76 407D3 HUF76407D3, HUF76407D3S O-251AA O-252AA HUF76407D3 6407D AN9321 HUF76407D3 HUF76407D3S HUF76407D3ST TB334 407D3 106E3 76407D PDF

    f3055l

    Abstract: FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		RFD3055LE, RFD3055LESM, RFP3055LE TA49158. f3055l FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A PDF

    AN7254

    Abstract: AN7260 RFW2N06RLE TB334
    Text: RFW2N06RLE Data Sheet Title FW2 6RL bt A, V, 60 m, gic vel, Cha el wer OST utho July 1999 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET Features The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET


    Original     		RFW2N06RLE RFW2N06RLE AN7254 AN7260 TB334 PDF

    FP3055LE

    Abstract: f3055l
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		RFD3055LE, RFD3055LESM, RFP3055LE TA49158. FP3055LE f3055l PDF

    F3055L

    Abstract: FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		RFD3055LE, RFD3055LESM, RFP3055LE TA49158. F3055L FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334 PDF

    RFD14N06L

    Abstract: RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334
    Text: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet January 2002 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives


    Original     		RFD14N06L, RFD14N06LSM, RFP14N06L RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334 PDF

    16n06l

    Abstract: AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334
    Text: RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		RFD16N06LESM 16n06l AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		RFD16N06LESM PDF

    TA0522

    Abstract: RFP15N06L RFP15N05L RFP15N05 AN7254 AN7260 TB334 RFP15N
    Text: RFP15N05L, RFP15N06L Data Sheet January 2002 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs Features • 15A, 50V and 60V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		RFP15N05L, RFP15N06L TA0522. RFP15N05L O-220AB RFP15Nopment. TA0522 RFP15N06L RFP15N05L RFP15N05 AN7254 AN7260 TB334 RFP15N PDF

    kp 1006

    Abstract: HUFA76504DK8 HUFA76504DK8T MS-012AA TB334 HARRIS SOP8
    Text: HUFA76504DK8 Data Sheet 2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 Packaging JEDEC MS-012AA 6400S BRANDING DASH K8 /Subject (60V, 0.072 1 2 Ohm, 3 4 4A, NChannel, Symbol Logic Level SOURCE1 (1) UltraFE GATE1 (2)


    Original     		HUFA76504DK8 MS-012AA 6400S kp 1006 HUFA76504DK8 HUFA76504DK8T MS-012AA TB334 HARRIS SOP8 PDF

    03n06

    Abstract: MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6
    Text: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet January 2002 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs Features • 0.30A, 60V These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener


    Original     		RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE 03n06 MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6 PDF

    16n06l

    Abstract: 16N06 16N06LE AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334
    Text: RFD16N06LE, RFD16N06LESM Data Sheet 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		RFD16N06LE, RFD16N06LESM 16n06l 16N06 16N06LE AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 PDF

    AN9321

    Abstract: AN9322 RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 215e3
    Text: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    Original     		RFD15N06LE, RFD15N06LESM TA49165. AN9321 AN9322 RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 215e3 PDF

    P30N06L

    Abstract: No abstract text available
    Text: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		RFP30N06LE, RF1S30N06LESM TA49027. P30N06L PDF

    P30N06

    Abstract: p30n06le P30N06L RFP30N06LE AN9321 RF1S30N06LESM RF1S30N06LESM9A TB334
    Text: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		RFP30N06LE, RF1S30N06LESM TA49027. P30N06 p30n06le P30N06L RFP30N06LE AN9321 RF1S30N06LESM RF1S30N06LESM9A TB334 PDF

    F30N06LE

    Abstract: AN9321 RF1S30N06LESM RF1S30N06LESM9A RFP30N06LE TB334 F30N06L 1S30N06L
    Text: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		RFP30N06LE, RF1S30N06LESM TA49027. F30N06LE AN9321 RF1S30N06LESM RF1S30N06LESM9A RFP30N06LE TB334 F30N06L 1S30N06L PDF

    RFP4N05L

    Abstract: RFP4N06L AN7254 AN7260 TA09520 TB334
    Text: RFP4N05L, RFP4N06L Data Sheet January 2002 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching


    Original     		RFP4N05L, RFP4N06L RFP4N05L RFP4N06L AN7254 AN7260 TA09520 TB334 PDF

    FDS9945

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode
    Text: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		FDS9945 FDS9945 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode PDF