irf1010 MOSFET
Abstract: IRF1010
Text: PD - 94826 IRFZ44VPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free Description HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ
|
Original
|
IRFZ44VPbF
O-220
O-220AB.
O-220AB
IRF1010
irf1010 MOSFET
IRF1010
|
PDF
|
IRF1010
Abstract: IRFZ44VPBF diode marking 17
Text: PD - 94826 IRFZ44VPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free Description HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ
|
Original
|
IRFZ44VPbF
O-220
IRF1010
IRFZ44VPBF
diode marking 17
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ßßDRIVENßBY E981.01 MULTIPHASE CONTROLLER ADVANCE PRODUCT INFORMATION - JUL 4, 2011 Features General Description ÿ Multiphase SMPS controller for Boost, SEPIC and Flyback Converters ÿ Wide input voltage range from 5V to 60V ÿ 20µA typical shutdown current
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SDB360 Semiconductor Schottky Barrier Diode Applications • Portable equipment battery applications • SMPS applications Features • • • • Low switching loss High reliability Low forward voltage: VF=0.65V Max. @ IF=3A Low reverse current: IR=0.35mA Max. @ VR=60V
|
Original
|
SDB360
SDB360
OD-106
KSD-D6A003-001
KSD-D6A003-001
|
PDF
|
SDB360
Abstract: No abstract text available
Text: SDB360 Semiconductor Schottky Barrier Diode Applications • Portable equipment battery applications • SMPS applications Features • • • • Low switching loss High reliability Low forward voltage: VF=0.65V Max. @ IF=3A Low reverse current: IR=500 ㎂ Max. @ VR=60V
|
Original
|
SDB360
OD-106
KSD-D6A003-000
SDB360
|
PDF
|
IRF1010
Abstract: IRFZ44VPBF
Text: PD - 94826 IRFZ44VPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free Description HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ
|
Original
|
IRFZ44VPbF
O-220
O-220AB
IRF1010
IRF1010
IRFZ44VPBF
|
PDF
|
IRFZ48V
Abstract: No abstract text available
Text: PD-94834 IRFIZ48VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V
|
Original
|
PD-94834
IRFIZ48VPbF
O-220
IRFZ48V
|
PDF
|
IRFZ48V
Abstract: No abstract text available
Text: PD-94834 IRFIZ48VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V
|
Original
|
PD-94834
IRFIZ48VPbF
O-220
I840G
IRFZ48V
|
PDF
|
AN-994
Abstract: IRFZ34V IRFZ34VL IRFZ34VS 94180
Text: PD - 94180 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description IRFZ34VS IRFZ34VL l HEXFET Power MOSFET l D VDSS = 60V
|
Original
|
IRFZ34VS
IRFZ34VL
AN-994
IRFZ34V
IRFZ34VL
IRFZ34VS
94180
|
PDF
|
AN-994
Abstract: IRFZ34V IRFZ34VL IRFZ34VS
Text: PD - 94180A Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description IRFZ34VS IRFZ34VL l HEXFET Power MOSFET l D VDSS = 60V
|
Original
|
4180A
IRFZ34VS
IRFZ34VL
EIA-418.
AN-994
IRFZ34V
IRFZ34VL
IRFZ34VS
|
PDF
|
AN-994
Abstract: IRFZ34V IRFZ34VL IRFZ34VS
Text: PD - 94180 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description IRFZ34VS IRFZ34VL l HEXFET Power MOSFET l D VDSS = 60V
|
Original
|
IRFZ34VS
IRFZ34VL
AN-994
IRFZ34V
IRFZ34VL
IRFZ34VS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 96187 IRFS3006-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS 60V RDS on typ. 1.5m: max. 2.1m:
|
Original
|
IRFS3006-7PPbF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary SDB360 Semiconductor Schottky Barrier Diode Applications • Portable equipment battery applications • SMPS applications Features • • • • Low power rectified High reliability Low forward voltage: VF=0.65V max. @ IF=3A Low reverse current: IR=500 ㎂ max. @ VR=60V
|
Original
|
SDB360
OD-106
|
PDF
|
TO-263CB
Abstract: AN-994 irfs3006 DT1410 1000T
Text: PD - 96187 IRFS3006-7PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G S VDSS 60V RDS on typ. 1.5m: max.
|
Original
|
IRFS3006-7PPbF
TO-263CB
AN-994
irfs3006
DT1410
1000T
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: PD - 95623 IRFZ24VPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description l D l VDSS = 60V
|
Original
|
IRFZ24VPbF
O-220
O-220AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 93959A IRFZ48V HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 12mΩ
|
Original
|
3959A
IRFZ48V
O-220
|
PDF
|
035H
Abstract: IRFPE30
Text: PD - 95500A IRFP054VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V
|
Original
|
5500A
IRFP054VPbF
IRFPE30
035H
IRFPE30
|
PDF
|
IRF1010
Abstract: No abstract text available
Text: PD - 95757A IRFB4215PbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free D VDSS = 60V
|
Original
|
5757A
IRFB4215PbF
O-220AB
O-220AB
IRF1010
|
PDF
|
cds 151a
Abstract: diode aa 90 IRF530S IRFZ48VS
Text: PD - 94051A IRFZ48VS HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 12mΩ
|
Original
|
4051A
IRFZ48VS
IRF530S
F530S
cds 151a
diode aa 90
IRFZ48VS
|
PDF
|
51a marking
Abstract: IRFZ44VS
Text: PD - 94050 IRFZ44VS l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications HEXFET Power MOSFET D VDSS = 60V RDS on = 16.5mΩ
|
Original
|
IRFZ44VS
moun14
F530S
51a marking
IRFZ44VS
|
PDF
|
IRF530S
Abstract: IRFZ48VS surface mount diode 3F
Text: PD - 94051A IRFZ48VS HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 12mΩ
|
Original
|
4051A
IRFZ48VS
IRF530S
F530S
IRFZ48VS
surface mount diode 3F
|
PDF
|
48V SMPS circuit
Abstract: IRFB4215
Text: PD - 95884 IRFB4215 HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 9.0mΩ
|
Original
|
IRFB4215
O-220AB
O-220AB
48V SMPS circuit
IRFB4215
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94051 IRFZ48VS HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 12mΩ
|
Original
|
IRFZ48VS
F530S
|
PDF
|
IRFIZ48V
Abstract: IRFZ48V
Text: PD-94072 IRFIZ48V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D l VDSS = 60V RDS on = 12mΩ
|
Original
|
PD-94072
IRFIZ48V
O-220
IRFIZ48V
IRFZ48V
|
PDF
|