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    60V TRANSISTOR NPN 3A Search Results

    60V TRANSISTOR NPN 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    60V TRANSISTOR NPN 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING KN2

    Abstract: No abstract text available
    Text: DXT651 60V NPN LOW VCE sat TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 3A high Continuous Current  Case material: Molded Plastic. “Green” Molding Compound.  Low saturation voltage VCE(sat) < 300mV @ 1A 


    Original     		PDF DXT651 300mV DXT751 AEC-Q101 J-STD-020 MIL-STD-202, DS31184 MARKING KN2

    2SA2071

    Abstract: 2SC5824 T100
    Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100

    2SA2071

    Abstract: 2SC5824 T100
    Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100

    Untitled

    Abstract: No abstract text available
    Text: TSC5904 Low Vcesat NPN Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCBO 80V BVCEO 60V IC 3A VCE SAT Features   Ordering Information High Collector-Emitter BVCEO=60V High Collector Current IC =3A Part No. TSC5904CX RF


    Original     		PDF TSC5904 OT-23 TSC5904CX 300mA

    Code A08 RF Semiconductor

    Abstract: NPN planar RF transistor marking code B2 RF POWER TRANSISTOR NPN A08 marking A08 SOT23 a08 transistor
    Text: TSC5904 Low Vcesat NPN Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCBO 80V BVCEO 60V IC 3A VCE SAT Features ● ● Ordering Information High Collector-Emitter BVCEO=60V High Collector Current IC =3A Part No. TSC5904CX RF


    Original     		PDF TSC5904 OT-23 TSC5904CX 300mA Code A08 RF Semiconductor NPN planar RF transistor marking code B2 RF POWER TRANSISTOR NPN A08 marking A08 SOT23 a08 transistor

    FZT651

    Abstract: transistor fzt651 FZT marking code FZT651QTC fzt651tc FZT651TA
    Text: A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 60V Maximum continuous current IC cont = 3A Low Saturation Voltage


    Original     		PDF FZT651 OT223 FZT751 AEC-Q101 OT223 J-STD-020 FZT651TA FZT651QTA FZT651TC FZT651 transistor fzt651 FZT marking code FZT651QTC

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 60V Maximum continuous current IC = 3A Low Saturation Voltage


    Original     		PDF FZT651 OT223 FZT751 AEC-Q101 OT223 J-STD-020 MIL-STD-202, DS33149

    2SC5824

    Abstract: 2SA2071 T100 2SC582 2SA20
    Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 zExternal dimensions (Unit : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) zApplications NPN Silicon epitaxial planar transistor 0.4 1.5 0.4


    Original     		PDF 2SC5824 200mV 200mA) 2SA2071. 2SC5824 2SA2071 T100 2SC582 2SA20

    ZNS66

    Abstract: No abstract text available
    Text: DSS60601MZ4 60V NPN LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data •     BVCEO > 60V IC = 6A High Continuous Current ICM = 12A Peak Pulse Current Low Saturation Voltage VCE sat < 60mV @ 1A Complementary PNP Type: DSS60600MZ4


    Original     		PDF DSS60601MZ4 OT223 DSS60600MZ4 AEC-Q101 J-STD-020 MIL-STD-202, DS31587 ZNS66

    Untitled

    Abstract: No abstract text available
    Text: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825


    Original     		PDF 2SA2701 2SA2702 2SA2071 SC-62) OT-89> 2SC5824 2SC5825 -500mV 2SA2072 SC-63)

    C5103

    Abstract: transistor C5103 C5103 Transistor
    Text: 2SC5103 Datasheet NPN 5A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 5A CPT3 Collector Base Emitter 2SC5103 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=3A/0.15A)


    Original     		PDF 2SC5103 SC-63) OT-428> 2SA1952 C5103 R1102A C5103 transistor C5103 C5103 Transistor

    SOT89 transistor marking 851

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.


    Original     		PDF ZXTN2010Z J-STD-020 ZXTP2012Z MIL-STD-202, DS33661 SOT89 transistor marking 851

    2sa1952

    Abstract: No abstract text available
    Text: 2SA1952 Datasheet PNP -5A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -5A CPT3 Collector Base Emitter 2SA1952 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5103 3) Low VCE(sat) VCE(sat)= -0.3V(Max.) (IC/IB= -3A/ -0.15A)


    Original     		PDF 2SA1952 SC-63) OT-428> 2SC5103 A1952 R1102A 2sa1952

    transistor d2012

    Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
    Text: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF D2012 TRANSISTOR--D2012 transistor d2012 d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012

    transistor d2012

    Abstract: D2012
    Text: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF D2012 transistor d2012 D2012

    D2012

    Abstract: No abstract text available
    Text: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF D2012 D2012

    d880 transistor

    Abstract: transistor D880
    Text: D880 YOUDA TRANSISTOR Si NPN TRANSISTOR—D880 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DSS4160DS 60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26 Features Mechanical Data • BVCEO > 60V   IC = 1A high Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = 2A Peak Pulse Current  UL Flammability Classification Rating 94V-0


    Original     		PDF DSS4160DS J-STD-020 250mV MIL-STD-202, DS36556

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT651 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •             BVCEO > 60V IC = 3A High Continuous Current ICM = 6A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A


    Original     		PDF FZT651 OT223 300mV FZT751 AEC-Q101 J-STD-020 DS33149

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • BVCEO > 60V • • IC = 1A Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound


    Original     		PDF FMMT491 500mW FMMT591 AEC-Q101 DS33091

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FCX491 60V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V   IC = 1A Continuous Collector Current   ICM = 2A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic. “Green” Molding Compound.


    Original     		PDF FCX491 FCX591 AEC-Q101 DS33054

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FCX491 60V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V   IC = 1A Continuous Collector Current     ICM = 2A Peak Pulse Current RCE sat = 195mΩ for a Low Equivalent On-Resistance


    Original     		PDF FCX491 FCX591 AEC-Q101 DS33054

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •


    Original     		PDF FZT651Q OT223 J-STD-020 300mV MIL-STD-202, DS36917

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23


    Original     		PDF FMMT491Q J-STD-020 MIL-STD-202, DS37009