BB409
Abstract: BB505B BB801 BB304 BB505 BB204 BB610 BB314 BB505G bb609b
Text: flñ D E Í f lH 3b 32 0 0 0 1 4 2 5 4 □ | 8236320 SIEMENS/ S P C L , SEMICONDS 88D 14254 D f " 07" Diodes Silicon tuning diodes Glass package DO 35 Characteristics TA = 25°C Type Applications Figure rs C ti/ C t2 V r \/Vr2 PF Vr V BB 409 4 .5 . 5.6
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aS3b320
55itiB
35max.
E30ES30H
BB409
BB505B
BB801
BB304
BB505
BB204
BB610
BB314
BB505G
bb609b
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SOT23 marking 619
Abstract: SN74AHCT MARKING 313 sc70 359 SOT23 Buffer gate 6 pin sot23 SOT23 MARKING SB AHC* marking marking 619 sot23 abstract Buffer gate sot23
Text: LL Non-Inverting Buffer and Driver - LL Buffer Gate with 3-State Output - SN74AHCT. TI Home > Semiconductors > Logic > Little Logic > LL Buffer, Driver and Transceiver > LL Non-Inverting Buffer and Driver > LL Buffer Gate with 3-State Output > SN74AHCT1G125 Status:
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SN74AHCT.
SN74AHCT1G125
SN74AHCT1G125
75LVT1624
SN74AUC125
SN74AHC595
Huang85261,
SN74AHCT1G125:
com/product/sn74ahct1g125
SOT23 marking 619
SN74AHCT
MARKING 313 sc70
359 SOT23
Buffer gate 6 pin sot23
SOT23 MARKING SB
AHC* marking
marking 619 sot23
abstract
Buffer gate sot23
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M80C186
Abstract: 80C186RP
Text: I R a d i a t i o n H a r d e n e d 80C186RP CHMOS Field 16 - bit Microprocessor For Space Applications s El’s 80C186RP RP for RAD-PAK high speed CMOS microcircuit fea tures a minimum 100 kilorad (Si) total dose toler ance. Using SEI's radia tion hardened RAD-PAK®
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80C186RP
80C186RP
M80C18616-bit
16-bit
A19-S6
A19-A16
A15-A0
M80C186
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MARKING CODE 618 SOT23
Abstract: No abstract text available
Text: MMBT489LT1 High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS 2.0 AMPS NPN TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector-Emitter Voltage VCEO 30 Vdc
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MMBT489LT1
0E-01
0E-02
0E-03
1E-05
MARKING CODE 618 SOT23
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EMC3DXV5T5
Abstract: No abstract text available
Text: EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com 3 R1 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MAXIMUM RATINGS TA = 25°C unless otherwise noted, common for Q1
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OT-553
EMC3DXV5T5
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AN-000004-11
Abstract: GALEP32 40PIN GALEP-4 FMEMCU-AN-000004-11 QFP100 QFP120 QFP48 QFP64 MB90F340 AN-900031
Text: Fujitsu Microelectronics Europe Application Note FMEMCU-AN-000004-11 F²MC-8L/16LX/FR FAMILY 8/16/32-BIT MICROCONTROLLER ALL SERIES GALEP-4 APPLICATION NOTE GALEP-4 Revision History Revision History Date 2004-04-14 2004-04-20 Issue V1.0, HWe, Initial Version
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FMEMCU-AN-000004-11
MC-8L/16LX/FR
8/16/32-BIT
AN-000004-11
220Ohm
SUB-D15
Pin19
AN-000004-11
GALEP32
40PIN GALEP-4
FMEMCU-AN-000004-11
QFP100
QFP120
QFP48
QFP64
MB90F340
AN-900031
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PDF
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GALEP32
Abstract: 40PIN GALEP-4 SubD25m 300004 AN-300 QFP100 QFP120 QFP48 QFP64 Sub-D25
Text: Fujitsu Microelectronics Europe Application Note MCU-AN-300004-E-V11 F²MC-8L/16LX/FR FAMILY 8/16/32-BIT MICROCONTROLLER ALL SERIES GALEP-4 APPLICATION NOTE GALEP-4 Revision History Revision History Date 2004-04-14 2004-04-20 Issue V1.0, HWe, Initial Version
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MCU-AN-300004-E-V11
MC-8L/16LX/FR
8/16/32-BIT
220Ohm
SUB-D15
Pin19
GALEP32
40PIN GALEP-4
SubD25m
300004
AN-300
QFP100
QFP120
QFP48
QFP64
Sub-D25
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors NPN Silicon 14 13 12 11 10 9 8 *Motorola Preferred Device NPN 1 2 3 MPQ2222 MPQ2222A* 4 5 6 7 14 1 MAXIMUM RATINGS Rating Symbol MPQ2222 MPQ2222A Unit Collector – Emitter Voltage VCEO
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MPQ2222
MPQ2222A
MPQ2222
MPQ2222A
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pm2222a
Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Text: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT
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BA582
OD123
BA482
BA682
BA683
BA483
BAL74
BAW62,
1N4148
pm2222a
SOD80C PHILIPS
BCB47B
1N4148 SOD80C
PMBTA64
PXTA14
BF960
FET BFW11
BF345C
BC558B PHILIPS
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Untitled
Abstract: No abstract text available
Text: 79-3293: Rev. 2; i / l/ l/ J X I / l/ l CMOS Monolithic Voltage Converter _ Genera! Description The MAX660 monolithic, charge-pump voltage inverter converts a +1.5V to +5.5V input to a corresponding -1.5V to -5.5V ou tput. Using only two low -cost
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MAX660
100mA
DO14b11
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duracell dl123a
Abstract: max660 MAX660CPA DL123A ICL7660 MAX660CSA MAX660EPA MAX660ESA MAX660MJA
Text: 19-3293; Rev. 2; 9/96 CMOS Monolithic Voltage Converter _Applications Laptop Computers Medical Instruments Interface Power Supplies Hand-Held Instruments Operational-Amplifier Power Supplies _ Features ®
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100mA
ICL7660
10kHz/80kHz
100mA
MAX660CPA
MAX38
1-0045A
duracell dl123a
max660
MAX660CPA
DL123A
MAX660CSA
MAX660EPA
MAX660ESA
MAX660MJA
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Untitled
Abstract: No abstract text available
Text: 19-3293; Rev. 2; 9/96 CMOS Monolithic Voltage Converter The MAX660 monolithic, charge-pump voltage inverter converts a +1.5V to +5.5V input to a corresponding -1.5V to -5.5V output. Using only two low-cost capacitors, the charge pump’s 100mA output replaces
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MAX660
100mA
1-0045A
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duracell dl123a
Abstract: MAx660 ICL7660 MAX660CPA MAX660CSA MAX660EPA MAX660ESA MAX660MJA
Text: 19-3293; Rev. 2; 9/96 CMOS Monolithic Voltage Converter The MAX660 monolithic, charge-pump voltage inverter converts a +1.5V to +5.5V input to a corresponding -1.5V to -5.5V output. Using only two low-cost capacitors, the charge pump’s 100mA output replaces
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MAX660
100mA
eith38
1-0045A
duracell dl123a
ICL7660
MAX660CPA
MAX660CSA
MAX660EPA
MAX660ESA
MAX660MJA
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duracell dl123a
Abstract: DL123A MAx660 ICL7660 MAX660CPA MAX660CSA MAX660EPA MAX660ESA MAX660MJA Duracell-DL123A
Text: 19-3293; Rev. 2; 9/96 CMOS Monolithic Voltage Converter The MAX660 monolithic, charge-pump voltage inverter converts a +1.5V to +5.5V input to a corresponding -1.5V to -5.5V output. Using only two low-cost capacitors, the charge pump’s 100mA output replaces
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MAX660
100mA
eith38
1-0045A
duracell dl123a
DL123A
ICL7660
MAX660CPA
MAX660CSA
MAX660EPA
MAX660ESA
MAX660MJA
Duracell-DL123A
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smd fl014
Abstract: IRFL4105PBF diode SMD MARKING CODE 607 314P EIA-541 FL014 IRFL014 SMD MARKING 541 DIODE
Text: PD- 95319 IRFL4105PbF HEXFET Power MOSFET Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.045Ω G ID = 3.7A S Description Fifth Generation HEXFETs from International Rectifier
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IRFL4105PbF
OT-223
EIA-481
EIA-541.
EIA-418-1.
smd fl014
IRFL4105PBF
diode SMD MARKING CODE 607
314P
EIA-541
FL014
IRFL014
SMD MARKING 541 DIODE
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MARKING 93 SOT-223
Abstract: fl014 314P AN-994 EIA-541 IRFL014 sot-223 93 marking code 27a sot
Text: PD - 95387 IRLL014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling Lead-Free D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A
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IRLL014PbF
OT-223
EIA-481
EIA-541.
EIA-418-1.
MARKING 93 SOT-223
fl014
314P
AN-994
EIA-541
IRFL014
sot-223 93
marking code 27a sot
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FL014
Abstract: IRFL214PBF IRF 100A 314P AN-994 EIA-541 IRFL014 PD-95318 International Rectifier TO-261AA
Text: PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description
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PD-95318
IRFL214PbF
OT-223
performanc72)
EIA-481
EIA-541.
EIA-418-1.
FL014
IRFL214PBF
IRF 100A
314P
AN-994
EIA-541
IRFL014
PD-95318
International Rectifier TO-261AA
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95320
Abstract: ST 95320 FL014 IRF 100A AN-994
Text: PD - 95320 IRFL9110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A S Description Third Generation HEXFETs from International Rectifier
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IRFL9110PbF
-100V
OT-223
EIA-481
EIA-541.
EIA-418-1.
95320
ST 95320
FL014
IRF 100A
AN-994
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FL014
Abstract: AN-994 irfl110pbf IRFL014 314P EIA-541 519 SOT-223
Text: PD - 95317 IRFL110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 100V RDS on = 0.54Ω G ID = 1.5A S Description
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IRFL110PbF
OT-223
performa72)
EIA-481
EIA-541.
EIA-418-1.
FL014
AN-994
irfl110pbf
IRFL014
314P
EIA-541
519 SOT-223
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IRFL9014PBF
Abstract: FL014 IRF 100A AN-994 irf* p-channel sot-223 95153 TO-261AA DSS 1630
Text: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A
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IRFL9014PbF
OT-223
EIA-481
EIA-541.
EIA-418-1.
IRFL9014PBF
FL014
IRF 100A
AN-994
irf* p-channel sot-223
95153
TO-261AA
DSS 1630
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smd fl014
Abstract: FL014 FL014 Example transistor SMD FL014 EIA-541 IRFL014 IRFL4310 838 infra red i*l014 MARKING 93 SOT-223
Text: PD - 91368B IRFL4310 HEXFET Power MOSFET D l l l l l l Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance VDSS = 100V RDS on = 0.20W G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier
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91368B
IRFL4310
OT-223
smd fl014
FL014
FL014 Example
transistor SMD FL014
EIA-541
IRFL014
IRFL4310
838 infra red
i*l014
MARKING 93 SOT-223
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91368B IRFL4310 HEXFET Power MOSFET D l l l l l l Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance VDSS = 100V RDS on = 0.20W G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier
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91368B
IRFL4310
OT-223
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VISHAY SOT 223 DATE CODE
Abstract: VISHAY SOT LOT CODE
Text: PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description
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PD-95318
IRFL214PbF
OT-223
08-Mar-07
VISHAY SOT 223 DATE CODE
VISHAY SOT LOT CODE
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FL014
Abstract: marking code vishay soic 314P AN-994 EIA-541 IRFL014 International Rectifier TO-261AA
Text: PD - 95317 IRFL110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 100V RDS on = 0.54Ω G ID = 1.5A S Description
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IRFL110PbF
OT-223
12-Mar-07
FL014
marking code vishay soic
314P
AN-994
EIA-541
IRFL014
International Rectifier TO-261AA
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