5BA DIODE
Abstract: No abstract text available
Text: SiC SCHOTTKY DIODE SML01SC06D3A/SML01SC06D3B • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available
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SML01SC06D3A/SML01SC06D3B
SML01SC06D3A-JQRS
5BA DIODE
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R1019
Abstract: No abstract text available
Text: Main Catalog Pilot Devices the complete offering News in this Catalog • Joysticks • Compact Mushrooms • Compact Illuminated Pushbuttons • Additional Legend Plate Holders • 50 Ω Potentiometer • Mounting Tool for Power Tool Contents Introduction. 2
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920R8128
1SFA619821R1000
1SFA619811R1000
CA1-8053
1SFA619920R8053
CA1-8054
1SFA619920R8054
MA1-8131
1SFA611920R8131
1SFC151004C0201.
R1019
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SMD DIODE 517
Abstract: crank sensor HAL621 marking code 4e SMD MARKING CODE TRANSISTOR 501 HAL629 HAL629UA-E SPGS0022-5-A3 Bipolar Static Induction Transistor
Text: MICRONAS Edition Feb. 5, 2001 6251-109-4E 6251-504-2DS HAL621, HAL629 Hall Effect Sensor Family MICRONAS HAL62x Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts
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6251-109-4E
6251-504-2DS
HAL621,
HAL629
HAL62x
12this
SMD DIODE 517
crank sensor
HAL621
marking code 4e
SMD MARKING CODE TRANSISTOR 501
HAL629
HAL629UA-E
SPGS0022-5-A3
Bipolar Static Induction Transistor
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crank sensor
Abstract: No abstract text available
Text: MICRONAS Edition Feb. 3, 2000 6251-504-1DS HAL621, HAL629 Hall Effect Sensor Family MICRONAS HAL62x Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range
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HAL621,
HAL629
6251-504-1DS
HAL62x
HAL621
crank sensor
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hall marking code A04
Abstract: No abstract text available
Text: MICRONAS Edition Feb. 3, 2000 6251-504-1DS HAL621, HAL629 Hall Effect Sensor Family MICRONAS HAL62x Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range
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6251-504-1DS
HAL621,
HAL629
HAL62x
HAL621
hall marking code A04
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D 16027 G
Abstract: No abstract text available
Text: CSD20030–Silicon Carbide Schottky Diode Zero R ecovery VRRM = 300V Rectifier IF = 20A Qc = 11.5nC Features • • • • • • • Package 300 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD20030â
O-247-3
CSD20030
D 16027 G
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Untitled
Abstract: No abstract text available
Text: CSD20060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 20A Qc = 28nC Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD20060â
O-247-3
CSD20060
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Untitled
Abstract: No abstract text available
Text: CSD20120–Silicon Carbide Schottky Diode VRRM = 1200V Zero Recovery Rectifier IF = 20A Qc = 61nC Features • • • • • • • Package 1200 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD20120â
O-247-3
CSD20120
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Untitled
Abstract: No abstract text available
Text: CSD10120D–Silicon Carbide Schottky Diode Zero Recovery Rectifier VRRM = 1200V IF = 10A Qc = 28nC Features • • • • • • • Package 1200 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior
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CSD10120Dâ
O-247-3
CSD10120D
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KV1298M
Abstract: 621 marking diode 94B DIODE SSOP-10 KV1294BM kv1298mtl C1 diode 298 sop8 KV1298BM
Text: Variable capacitance diode for AM tuning AMチューナ用電圧可変容量ダイオード KV1294BM, KV1298M, KV1298BM FEATURES Excellet Matching Between Elements Excellent Linearity of The CV Curve High Q: Q=200 to Extra Llarge Capacitance Ratio: A=17.0 to
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KV1294BM,
KV1298M,
KV1298BM
KV1294BM
KV1294BMTL.
KV1298MTL.
KV1298BMTL.
KV1298M
SSOP-10
KV1298M
621 marking diode
94B DIODE
SSOP-10
KV1294BM
kv1298mtl
C1 diode
298 sop8
KV1298BM
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Catalog Sensors for Process Applications
Abstract: NCB1.5-8GM25-N0 5M
Text: FACTORY AUTOMATION CATALOG SENSORS FOR PROCESS APPLICATIONS 1FQQFSM 'VDIT°6OCFBUBCMFGPSRVBMJUZBOEDIPJDF 8F BSF B MFBEJOH NBOVGBDUVSFS PG JOEVTUSJBM TFOTPST BOE TFOTPS TZTUFNT
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199003130E
Catalog Sensors for Process Applications
NCB1.5-8GM25-N0 5M
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diode marking M18
Abstract: VT18
Text: Diffuse mode sensor VT18-8-400-M-LAS/40a/118/128 Dimensions 4 Detail "A" M18 x 1 24 2 43.8 44.6 47.1 53.9 65 78 Detail "A" Indicating/ Operating means D 7.8 L 11.2 Light/dark switch SENS. LED yellow LED green Sensing range adjuster Model Number VT18-8-400-M-LAS/40a/118/128
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VT18-8-400-M-LAS/40a/118/128
VT18-8-400-M-LAS/40a/118/128
diode marking M18
VT18
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znr 14 k 201 varistor
Abstract: znr 14 k 221 varistor znr 10 k 621 varistor znr k 821 varistor znr k 201 varistor znr 14 k 361 varistor znr 20 k 391 varistor thyristor CSG2001-14A04 Znr 14 k 391 znr k 391 varistor
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.
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znr 14 k 361 varistor
Abstract: znr 14 k 221 varistor thyristor CSG2001-14A04 znr k 391 varistor znr 14 k 201 varistor znr 14 k 330 varistor znr k 201 varistor znr3 ZNR 471
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.
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Untitled
Abstract: No abstract text available
Text: CSD10120D Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=1200V IF=10A Features Benefits _ • 1200 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD10120D
CSD10120D,
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Untitled
Abstract: No abstract text available
Text: CSD20120 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=1200V IF=20A Features Benefits _ • 1200 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD20120
CSD20120D
CSD20120,
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D 16027 G
Abstract: No abstract text available
Text: CSD20030 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=300V IF=20A Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD20030
CSD20030D
CSD20030,
D 16027 G
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1MPT4618
Abstract: 1PMT4099 1PMT4135 1PMT4614 1PMT4615 1PMT4616 1PMT4617 1PMT4627
Text: POWERMITE LOW NOISE 1 WATT Zener Diodes 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 602 941-6300 Fax: (602) 947-1503 1PMT4614 thru 1PMT4627 and 1PMT4099 thru 1PMT4135 Description In Microsemi's Powermite® surface mount package, these zener diodes provide power-handling capabilities found in larger packages. In addition to
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1PMT4614
1PMT4627
1PMT4099
1PMT4135
DO-216
MSC0994
1MPT4618
1PMT4135
1PMT4615
1PMT4616
1PMT4617
1PMT4627
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transistor collector diode protection
Abstract: marking 720 transistor
Text: DTDG14GP Digital transistor, NPN, with resistor and Zener diode Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: DTDG14GP; E01 • in addition to standard features of digital transistor, this transistor has:
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DTDG14GP
SC-62)
DTDG14GP;
DTDG14GP
transistor collector diode protection
marking 720 transistor
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Untitled
Abstract: No abstract text available
Text: • bbsa^ai □□25712 621 M A P X N AMER PHILIPS/DISCRETE PMBD 914 b?E D J V SILICON PLANAR EPITAXIAL HIGH SPEED DIODES Silicon epitaxial high speed diodes in a microminiature plastic envelope. It is intended for high-speed switching in thick and thin-film circuits.
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LL53T31
7Z613261
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TPB200S
Abstract: TPB245S TPB265S
Text: [ Z J SCS-THO M SO N IM«Q [I[L[l« QM(gS TPB200S TPB245S/TPB265S SURGE ARRESTORS FEATURES • SOLID STATE SURGE ARRESTOR PACKAGED IN AXIAL DIODE. ■ VOLTAGE RANGE = 200 V TO 265 V ■ TIGHT VOLTAGE TOLERANCE ■ FAST RESPONSE TIME ■ VERY LOW AND STABLE LEAKAGE
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TPB200S
TPB245S/TPB265S
TPB200S/TPB245S/TPB265S
TPB200S
TPB245S
TPB265S
TPB265S
00b3R33
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Untitled
Abstract: No abstract text available
Text: U - U T .Ç 'tt- K Super Fast Recovery Diode Axial Diode m m t vt-Äm outline dimensions S3L40 Case : 1.4¿ 7 -n 5 25 « ; 25« 400V 3A i 4.4 -8Ï 1 " 1 * • f î y 'i'X D ° w- •trrS O n s • S ii S ? g * f f 5 * s e s ij( £ ) ^ Color code (Yellow)
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S3L40
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Diode MARKING S37
Abstract: transient voltage suppressor diode LDP24AS DTR7637 DIODE MARKING CODE 623
Text: r= 7 SG S-TtfO M SO N * 7 £ [M M iL E g ïM O g S LDP24AS TRANSIL LOAD DUMP PROTECTION FEATURES • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION ■ HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS
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LDP24AS
Diode MARKING S37
transient voltage suppressor diode
LDP24AS
DTR7637
DIODE MARKING CODE 623
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VQE 22 led
Abstract: transistor sec 623 transistor sec 621 MOCD208 transistor D207
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD207 MOCD208 [CTR « 100-200%] Transistor Output [CTR = 40-125%] These devices consist of two gallium arsenide Infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface
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RS481A
CD207
MOCD208
VQE 22 led
transistor sec 623
transistor sec 621
MOCD208
transistor D207
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