621664H Search Results

Contextual Info: 621664H/HM621864H Series — — Preliminary 65536-word x 16/18-bit High Speed CM O S Static RAM T he H M 621664H /H M 621864H is an asyncronous high speed static R A M organized as 64 kw ord x 1 6 /1 8 b it. It r e a liz e h ig h s p e e d a c c e s s tim e

Contextual Info: 621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349 A Z Rev. 1.0 Sep. 11, 1996 Description The 621664HB is an asynchronous high speed static RAM organized as 64-kword X 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am CMOS process and high speed circuit designing

Contextual Info: 621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349A Z Rev. 1.0 Sep. 11, 1996 Description The 621664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 nm CMOS process and high speed circuit designing

Contextual Info: 621664H / HM621864H Series 65,536-word x 16/18-bit High Speed CMOS Static RAM HITACHI The H M 6 2 1 6 6 4 H /H M 6 2 1 8 6 4 H is an asynchronous high speed static RAM organized as 64-kword x 16/18-bit. It realize high speed access tim e 20 /2 5 ns w ith em p lo y in g 0.8 pm C M O S

27C256AG

Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Contextual Info: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

Contextual Info: 621664HBI Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-786 A Z Rev. 1.0 May. 19, 1997 Description The 621664HBI is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (20 ns) with employing 0.8 Jim CMOS process and high speed circuit designing

Contextual Info: 621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349A Z Rev. 1.0 Sep. 11, 1996 Description The 621664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 jJ.m CMOS process

Contextual Info: RPR 2 0 '993 621664H Series Preliminary 65536-Word X 16-Bit High Speed CMOS Static RAM Rev. 2 Jun.16,1992 ^ H IT A C H I T he H M 6 2 1 6 6 4 H is an asyncronous high speed static R A M organized as 64 kword x 16 b it It realize high speed access time 15/20/25 ns with

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

Contextual Info: 621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349 A Z Rev. 1.0 Sep. 11,1996 Description The 621664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 Jim CMOS process and high speed circuit designing

Contextual Info: 621664HB Series 1 M High Speed SRAM 64-kword x 16-bit HITACHI ADE-203-349B(Z) Rev. 2.0 Nov. 1997 Description The 621664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am CMOS process and high speed circuit designing