siemens THY F 75 A 80
Abstract: siemens thyodul Siemens MTT 95 A 12 N siemens THY M 75 A SIEMENS THYRISTOR thyodul siemens thyodul MTT40A 12 n siemens THY F 75 A Siemens MTT 95 A 06 N MTT40A MTT95A
Text: SIEMENS AKTIENGESELLSCHAF QBE t 6235bOS OülSbHS H • S I E Í ■ " p % 3 S~-A3 Circuit Configurations Available MTT40 A . MTT 95 A, MTD 40 A . MTD 95 A MDT40A.MDT95A Fully controlled version MTT AK K |—<>— — » 2 \L. Half-controlled version
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023SbOS
MTT40A.
MTT95A,
MDT40A.
MDT95A
MTT100A.
MTT120A,
MDT100A.
MDT120A,
ThyL75A
siemens THY F 75 A 80
siemens thyodul
Siemens MTT 95 A 12 N
siemens THY M 75 A
SIEMENS THYRISTOR thyodul
siemens thyodul MTT40A 12 n
siemens THY F 75 A
Siemens MTT 95 A 06 N
MTT40A
MTT95A
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Untitled
Abstract: No abstract text available
Text: 25C D • S 3-/3 6235bOS 0004047 4 « S I E G !' BU 426 BU 426 A NPN Silicon Power Transistors - SIEMENS AKTIENGESELLSCHAF BU 426 and BU 426 A are triple diffused silicon power switching transistors in SOT 93 case TOP 3 . They are outstanding for short switching times and high dielectric strength
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6235bOS
Q68000-A5164
Q68000-A5165
curre25
BU426
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Q67100-Q3018
Abstract: Q67100-Q3019
Text: SIEM EN S 8M X 36-Bit EDO-DRAM Module HYM 368035S/GS-60 Advanced Inform ation • 8 388 608 words by 36-Bit organization in 2 banks • Fast access and cycle time 60 ns RAS access time 15 ns CAS access tim e 104 ns cycle time • Hyper page mode EDO capability
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36-Bit
368035S/GS-60
L-SIM-72-17)
L-SIM-72-17
Q67100-Q3018
Q67100-Q3019
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Untitled
Abstract: No abstract text available
Text: 47E D SIEMENS • ÔE35bD5 □03101,0 b « S I E G SIEMENS AK TIE NG ESE LLSCHAF ^ 5 3 - 3 3 - ^ Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Preliminary • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,
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E35bD5
8-/16-Bit
16-bit
16/8-bit
flS35b05
T-52-33-7g
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Untitled
Abstract: No abstract text available
Text: Electrical Characteristics SIEM ENS 5 Electrical Characteristics Absolute Maximum Ratings Parameter Symbol Limit Values Unit Voltage on any pin with respect to ground Vs - 0.4 to V Am bient temperature under bias Ta O to 70 Storage temperature 7stg - 6 5 to 125
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P-LCC-44-1
fl235b
Db4b01
P-MQFP-64-1
fl235bG5
0Gb4fci02
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Untitled
Abstract: No abstract text available
Text: SIEMENS Triple 8-Bit Analog-to-Digital-Converter SDA 9205-2 CMOS 1C Preliminary Data Features • • • • • • • Three equivalent CMOS A/D converters on chip 30-MHz sample rate 8-bit resolution No external sample & hold required On-chip input buffer for each analog channel
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30-MHz
P-LCC-68-1
Q67100-H5069
fl235b05
P-LCC-44-1
fl23Sfc
A235b05
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sab80188
Abstract: SAB 8086 80188 siemens EM 235 cn
Text: 47E » • SIEMENS B235b05 GG313b4 T « S I E G SIEMENS AKTIENGESELLSCHAF High-lntegration SAB 80188/80188-1 8-Bit Microprocessor Preliminary SAB 80188 8 MHz • Integrated feature set - enhanced SAB 8088-2 CPU - clock generator - 2 independent high-speed DMAchannels
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B235b05
GG313b4
16-bit
T-49-17-07
fl235bOS
SAB80188
fi23SbDS
T-49-77-07
sab80188
SAB 8086
80188
siemens EM 235 cn
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SAB 82258
Abstract: sab82257
Text: 4 7E D Device Specifications • fiSBSbGS SIEI1ENS DD330S1 1 « S IE G AKTI ENGESELLSCHAF Preliminary T - « 3 - 3 3 - l et SAB 82257 High-Performance DMA Controller for 16-Bit Microcomputer Systems SAB 82257 SAB 82257-6 8 MHz 6 MHz • • • • 16 Mbytes addressing range
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DD330S1
16-Bit
SAB82257
fl235b05
003310b
82257-N
Q67120-P176
82257-6-N
SAB 82258
sab82257
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E3043
Abstract: E3062A
Text: fl23Sb05 0001337 4ñ0 S IE M E N S HITFET BTS 949 Smart Lowside Power Switch Features Product Summary • Logic Level Input Continious drain source • Input protection ESO On-state resistance • Thermal shutdown Current limitation • Overload protection
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23SbDS
235bOS
TQ220/5
Q67060-XX
GPT0S165
T0220/5
E3043
TQ220/5
E3062A
E3043
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N1475
Abstract: No abstract text available
Text: f l 235 bOS G G 37 b 47 7 • MKT Capacitors SI EMENS A KT I EN 6 E S E L L S C H A F M7E D - - SIEG E3 B 3 2 5 2 0 .B 3 2 52 9 / f 'C f S l 7 ' O S. M e t a liz a d p o ly e s t e r film c a p a c it o r s in a c c o r d a n c e w it h D IN 4 4 1 1 2
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Untitled
Abstract: No abstract text available
Text: ÜÖD D • 88D û23StiQS QQISQbô 2 H S I E â 15068 D BUZ 360 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel Draln-source voltage K>s Continuous drain current ii Draln-source on-reslstance ^DS on 800 V 3,6 A 3,0 Si Description FREDET with fast-recovery reverse diode, N-channel, enhancement mode
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23StiQS
6235bOS
QQ15Q72
235b05
G--02
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SDA5241
Abstract: sda 5241 a5006 sda 5231-2 sync STT 3 SIEMENS
Text: SIE D • fl53SbG5 DD441S2 TT4 « S I E G S IE M E N S - c - - n ~ c > - t- i3 SIEMENS AKTIENGESELLSCHAF SD A 5231-2 Data Slicer for Teletext Bipolar IC Preliminary Data Features • Crystal-stable data clock regeneration for a bit rate of 6.9375 MHz • Separation and regeneration of teletext infor
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fl53SbG5
DD441S2
P-DIP-28
67000-A5006
T-77-07-13
E35bOS
T--77--07--13
SDA5241
sda 5241
a5006
sda 5231-2
sync
STT 3 SIEMENS
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Microcontroller Family SAB 8051 Pocket Guide
Abstract: pin diagram of ic 8032 80513-P SAB 8051a p Microcontroller Family SAB 8051A Pocket Guide 8032b-p B158-H6497-X-X-7600 siemens 8032 SAB 8051 p 8052B-P
Text: S1E D • a23Sb05 SIEM ENS 0044641 515 « S I E G SIEMENS AKTI ENGESELLSCHAF - ¡ ^ « - 1 ^ - 0 5 8-Bit Single-Chip Microcontroller SAB 8052/8032 Family Preliminary SAB 8052B Microcontroller with factory-maskprogrammable ROM 8K SAB 80513 Microcontroller with factory mask-programmable ROM (16 K)
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a23Sb05
8052B
8032B
16-bit
PL-CC-44
P-DIP-40
PL-CC-44
Microcontroller Family SAB 8051 Pocket Guide
pin diagram of ic 8032
80513-P
SAB 8051a p
Microcontroller Family SAB 8051A Pocket Guide
8032b-p
B158-H6497-X-X-7600
siemens 8032
SAB 8051 p
8052B-P
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Untitled
Abstract: No abstract text available
Text: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be
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64-bit/s
128-kbit/s
IA-BIDfCl80x
1A-BID180x
0235b05
54CC2
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633sb
Abstract: No abstract text available
Text: fl235bOS D037b47 7 SIEG □ M K T Capacitors SIEMENS A KT IE N G E S E L L S C H A F M7E D B 32520 .B 32529 ft~ O S l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.
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fl235bOS
D037b47
633sb
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m8334
Abstract: No abstract text available
Text: fl235bOS D037b47 7 SIEG M K T Capacitors □ SIEMENS A K T I E N G E S E L L S C H A F M7E D B 32520 .B 3 2 5 2 9 ft~OS l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.
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fl235bOS
D037b47
m8334
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Untitled
Abstract: No abstract text available
Text: SIEMENS TUA 6110XS preliminary IC-SPECIFICATION Contents SAT Mixer-Oscillator-PLL for 3.3GHz paf>e Contents 1 Functional Description, Application Pin Defintion and Function Block Diagram 5 Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings
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6110XS
S879-A100-V1
6235bOS
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Q67100-Q2018
Abstract: Q67100-Q2019 Q67100-Q976 Q67100-Q977
Text: SIEM EN S 2M X 32-Bit Dynamic RAM Module HYM 322030S/GS-60/-70 Advanced Inform ation 2 097 152 words by 32-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle tim e -60 version 70 ns access time 130 ns cycle tim e (-70 version)
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32-Bit
322030S/GS-60/-70
L-SIM-72-9
A235b05
0D7173Ã
Q67100-Q2018
Q67100-Q2019
Q67100-Q976
Q67100-Q977
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hall sensor 80 L
Abstract: Hall sensors Siemens Hall Siemens hall sensor sot-143 siemens magnetic sensors 80 L hall sensor hall marking 135 hall sensor 120 ksy 13 e R20 marking
Text: SIEM EN S KSY13 Position Hall Sensor Features • • • • High sensitivity High operating temperature Low offset voltage Low of sensitivity and internal resistance • Plastic miniature package SOT 143 for surface mounting SMT TC Typical applications
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GPX0678S
Q62705-K209
18-cm
TC\J20
6235bOS
KSY13
V20at
HS00100
023SbD5
0Dbfl47fl
hall sensor 80 L
Hall sensors Siemens
Hall Siemens
hall sensor sot-143
siemens magnetic sensors
80 L hall sensor
hall marking 135
hall sensor 120
ksy 13 e
R20 marking
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Siemens MKT
Abstract: No abstract text available
Text: fl235bOS D037b47 7 SIEG □ MKT Capacitors SIEMENS AKTIENGESELLSCHAF M7E D B 32520 .B 32529 ft~ O S l7-o Metalized polyester film capacitors in accordance w ith DIN 44112 VR = 63 to 630 Vdc With quality assessment according to CECC 30401-043, edition 1, June 1983.
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fl235bOS
D037b47
Siemens MKT
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siemens igbt BSM 200 GA 120
Abstract: siemens igbt BSM 300 igbt module bsm 300 igbt BSM 300 GA 120 siemens igbt BSM 10 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 SIS00025 C67070-A2017-A70 siemens igbt chip
Text: SIEMENS BSM 300 GA 120 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Package Ordering Code BSM 300 G A 120 DN2 1200V 430A SINGLE SWITCH 1 C67076-A2007-A70 BSM 300 GA 120 DN2 S 1200V 430A
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C67076-A2007-A70
C67070-A2017-A70
023SbGS
fl235b05
SIS00025
235bOS
0Qfi02b3
SIS00041
siemens igbt BSM 200 GA 120
siemens igbt BSM 300
igbt module bsm 300
igbt BSM 300 GA 120
siemens igbt BSM 10
siemens igbt BSM 300 ga 120
siemens igbt BSM 200 GA 100
siemens igbt chip
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6610
Abstract: MPX GPF smd marking KH Q67000-A5126 N10190 TDA i2c tone volume C901 AF19-20 smd AV25 RMS20
Text: SIEMENS TV-Stereo Processor TDA 6610-5 Bipolar IC Features • • • • • A ll functions are I 2C Bus controlled Suitable for m ultistandard including NICAM SCARTinterface Independent headphones output high signal noise ratio Extremely low total harm onic distortion
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Q67000-A5126
P-DIP-28-3
25max
P-DSO-28-1
6610
MPX GPF
smd marking KH
N10190
TDA i2c tone volume
C901
AF19-20
smd AV25
RMS20
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siemens igbt BSM 150 gb 100 d
Abstract: siemens igbt BSM 150 Gb 160 d siemens igbt BSM 100 gb DDMS677 GG45 SIEMENS VF 100 200AH tt200a
Text: bOE D • fl23Sfc.QS G G 4 5 Ô 7 2 05b « S I E G SIEMENS S IE H E N S A K T IE N 6 E S E L L S C H A F T ' & ' - a f BSM 100 GB 100 D BSM100 GAL 100 D IGBT Module Preliminary Data v CE = 1000 v / c = 2 x 1 3 5 A at Tc = 2 5 C I c = 2 x 100 A at r c = 80 C
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23SLGS
2x135
BSM100
C67076-A2103-A2
C67076-A2004-A2
siemens igbt BSM 150 gb 100 d
siemens igbt BSM 150 Gb 160 d
siemens igbt BSM 100 gb
DDMS677
GG45
SIEMENS VF 100
200AH
tt200a
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Untitled
Abstract: No abstract text available
Text: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I 2C Bus Interface SDA 2586-5 Preliminary Data MOS 1C Features • Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V
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Q67100-H5101
0235b05
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