Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage.
|
Original
|
ENN3093
2SA1707/2SC4487
2SA1707/2SC4487]
2SA1707
|
PDF
|
2SA1707
Abstract: No abstract text available
Text: Ordering number:EN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage.
|
Original
|
EN3093
2SA1707/2SC4487
2SA1707/2SC4487]
2SA1707
2SA1707
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number : EN3093A 2SA1707/2SC4487 Bipolar Transistor http://onsemi.com - 50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage • • Large current capacity, wide ASO
|
Original
|
EN3093A
2SA1707/2SC4487
2SA1707
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SA1707 / 2SC4487 Ordering number : EN3093A SANYO Semiconductors DATA SHEET 2SA1707 / 2SC4487 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Features • • Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage
|
Original
|
2SA1707
2SC4487
EN3093A
2SA1707
|
PDF
|
2044B
Abstract: 2SA1732
Text: Ordering number:EN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Features • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions
|
Original
|
EN3136
2SA1732
2045B
2SA1732]
2044B
2044B
2SA1732
|
PDF
|
2SA1707
Abstract: 2SC4487 ITR04304 ITR04305 ENN3093
Text: Ordering number:ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage.
|
Original
|
ENN3093
2SA1707/2SC4487
2SA1707/2SC4487]
2SA1707
2SA1707
2SC4487
ITR04304
ITR04305
ENN3093
|
PDF
|
"Marking 121"
Abstract: 2SA1502 FC121
Text: Ordering number:EN3190 FC121 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistances (R1=2.2kΩ, R2=10kΩ). · Composite type with 2 transistors contained in the
|
Original
|
EN3190
FC121
FC121
2SA1502,
FC121]
"Marking 121"
2SA1502
|
PDF
|
2SA1732
Abstract: 2044B ITR04435
Text: Ordering number:ENN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.
|
Original
|
ENN3136
2SA1732
2045B
2SA1732]
2044B
2SA1732
2044B
ITR04435
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number:EN3190 FC121 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistances (R1=2.2kΩ, R2=10kΩ). · Composite type with 2 transistors contained in the
|
Original
|
EN3190
FC121
FC121
2SA1502,
FC121]
|
PDF
|
2044B
Abstract: 2SA1732 ITR04435
Text: Ordering number:ENN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.
|
Original
|
ENN3136
2SA1732
2045B
2SA1732]
2044B
2044B
2SA1732
ITR04435
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage.
|
Original
|
ENN3093
2SA1707/2SC4487
2SA1707/2SC4487]
2SA1707
|
PDF
|
IC TA 31101
Abstract: pa 2030a equivalent pa 2030a FC102 ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor
Text: SANYO SEMICONDUCTOR CORP 55E D 7 EH707fci Q D 0 7 M 4 D Q T - Z 7 -Ö 7 FC102 # NPN Epitaxial Planar Silicon Com posite Transistor 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3110 F eatu res •Composite type with 2 transistors contained in the CP package currently in use, im proving the
|
OCR Scan
|
00Q7M40
FC102
FC102
2SC4211,
IC TA 31101
pa 2030a equivalent
pa 2030a
ts 3110 TRANSISTOR
2SC4211
C-03
DDD744S
08/bup 3110 transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SANYO SEM ICO ND UC TOR CORP 22E D 7*n707fa 00073=12 4 FC121 T - 37-/3 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications with Bias Resistances R1=2.2kO, R2=10k0 3190 Features • On-chip bias resistances (Ri=2.2kQ,R2=lOkfl)
|
OCR Scan
|
n707fa
FC121
FC121
2SA1502,
100pA
6299MO
00Q73T3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number: EN 3 0 9 3 _2SA1707/2SC4487 No.3093 PNP/NPN Epitaxial Planar Silicon Transistors S A iY O i High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Large current capacity, wide ASO • Low collector-to-emitter saturation voltage
|
OCR Scan
|
2SA1707/2SC4487
2SA1707
6299MO
1707/2SC4487
|
PDF
|
|
|
pa 2030a
Abstract: 25CC 2SA1622 FC103 2018Al IC 7443
Text: SANYO SEMICONDUCTOR CORP 7^ 7 0 7 1 3 22E » 0QG7443 h T~ 21 'Oc{ FC103 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Low-Frequency General-Purpose Amp, Differential Amp Applications 3111 F e a tu re s • Com posite type w ith 2 tran sisto rs contained in the CP package c u rre n tly in use, im p ro v in g th e
|
OCR Scan
|
FC103
2SA1622,
pa 2030a
25CC
2SA1622
2018Al
IC 7443
|
PDF
|
2sa1502
Abstract: No abstract text available
Text: Ordering n u m b e r:EN 3190 F C 12 1 PNP Epitaxial P lanar Silicon Composite Transistor Switching Applications with Bias Resistance F eatu re s • On-chip bias resistances (Ri —2.2kQ,R2 = lOkft) • Composite type with 2 transistors contained in the CP package currently in use, im proving the
|
OCR Scan
|
FC121
2SA1502,
2sa1502
|
PDF
|
2044B
Abstract: 2SA1732
Text: Ordering number: EN 3 1 3 6 2 S A 1 73 2 No.3136 PN P E pitaxial P la n ar Silicon T ransistor High-Speed Switching Applications F e a tu re s - Adoption of FBET, MBIT processes • Large cu rren t capacity •Low collector-to-em itter saturation voltage ■F ast switching speed
|
OCR Scan
|
|
PDF
|
m4871
Abstract: 2SA1707 2SA17C 2SC448 5A170 CBO 40V CEO 25V EBO 5V transistors 2SA 2SA707
Text: Ordering num ber: EN 3093 2SA1707/2SC4487 No.3093 i SANYO PNP/NPN Epitaxial Planar Silicon Transistors i High-Current Switching Applications F eatu res • Adoption of FBET, MBIT processes - Large current capacity, wide ASO • Low collector-to-emitter saturation voltage
|
OCR Scan
|
2SA1707/2SC4487
2SA1707
m4871
2SA17C
2SC448
5A170
CBO 40V CEO 25V EBO 5V
transistors 2SA
2SA707
|
PDF
|
SANYO SS 1001
Abstract: FC101 FC101 cp6 MA 2067
Text: SANYO SEMICONDUCTOR CORP ESE D T'HTGTb Q007437 Q T 'Z 7 ~ 0 9 f c io i PNP E pitaxial P lanar S ilic o n C o m p o s ite T ra n s is to r 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3109 F e a tu re s - Composite type w ith 2 tran sisto rs contained in the CP package cu rre n tly in use, im proving th e
|
OCR Scan
|
FC101
2SA1622,
SANYO SS 1001
FC101 cp6
MA 2067
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering num beriE N 3136 2SA1732 No.3136 SA W O PN P E p itax ial P la n a r Silicon T ra n sisto r I High-Speed Switching Applications Features • Adoption of FBET, MBIT processes •Large c u rre n t capacity • Low collector-to-em itter sa tu ra tio n voltage
|
OCR Scan
|
2SA1732
20uft
6299MO
|
PDF
|
Transistor A1707
Abstract: A1707 2SA17 transistor 2sa1707 K 4005 transistor C4487 2SA1707 24487 TO-92 NPN CBO 40V CEO 25V EBO 5V 3a170
Text: O rdering num ber: EN 3093 2SA1707/2SC4487 No.3093 SAXYO PNP/NPN Epitaxial Planar Silicon Transistors i High-Current Switching Applications Features • Adoption of FBET, MBIT processes • Large current capacity, wide ASO • Low collector-to-emitter saturation voltage
|
OCR Scan
|
2SA1707/2SC4487
2SA1707
2034/2034A
SC-43
7tlt17D7b
Transistor A1707
A1707
2SA17
transistor 2sa1707
K 4005 transistor
C4487
2SA1707
24487
TO-92 NPN CBO 40V CEO 25V EBO 5V
3a170
|
PDF
|
