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    635R Search Results

    635R Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TPS26635RGET Texas Instruments 60V, 6A Power limiting, surge protection industrial eFuse 24-VQFN -40 to 125 Visit Texas Instruments Buy
    TPS26635RGER Texas Instruments 60V, 6A Power limiting, surge protection industrial eFuse 24-VQFN -40 to 125 Visit Texas Instruments Buy
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    635R Price and Stock

    MERITEK Electronics Corporation CR1635R7F

    RES SMD 35.7 OHM 1% 1/10W 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CR1635R7F Reel 15,000 5,000
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    • 10000 $0.0017
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    Vishay Dale CRCW120635R7FKEA

    RES SMD 35.7 OHM 1% 1/4W 1206
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CRCW120635R7FKEA Reel 10,000 5,000
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    • 10000 $0.01105
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    CRCW120635R7FKEA Cut Tape 4,814 1
    • 1 $0.1
    • 10 $0.048
    • 100 $0.0261
    • 1000 $0.01586
    • 10000 $0.01586
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    Delta Electronics Inc RLT0816-3-5R10-JNH

    RES SMD 5.1 OHM 5% 1/4W 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RLT0816-3-5R10-JNH Reel 10,000 5,000
    • 1 -
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    • 10000 $0.1159
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    Delta Electronics Inc RLT0816-3-5R10-FNH

    RES SMD 5.1 OHM 1% 1/4W 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RLT0816-3-5R10-FNH Cut Tape 6,785 1
    • 1 $0.69
    • 10 $0.391
    • 100 $0.2339
    • 1000 $0.14827
    • 10000 $0.14827
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    RLT0816-3-5R10-FNH Digi-Reel 6,785 1
    • 1 $0.69
    • 10 $0.391
    • 100 $0.2339
    • 1000 $0.14827
    • 10000 $0.14827
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    RLT0816-3-5R10-FNH Reel 5,000 5,000
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    • 10000 $0.1125
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    Vishay Roederstein MKP1839410635R

    CAP FILM 0.1UF 10% 630VDC AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MKP1839410635R Cut Tape 1,000 1
    • 1 $3.05
    • 10 $2.343
    • 100 $1.7848
    • 1000 $1.435
    • 10000 $1.435
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    MKP1839410635R Reel 1,000 1,000
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    • 1000 $1.11
    • 10000 $1.11
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    635R Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DD3150

    Abstract: 316 bcg 563-HH-3421-BC A42 BF 331 531002b00000g to220 mica 1591-TSBK NG-9512E 131-6 wj 78 1554d
    Text: ENCLOSURES AND THERMAL Plastic Enclosures Altech. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1866, 1867 Bud . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1868, 1869, 1870, 1871, 1872, 1873 Bulgin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1874


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Y sa m liec HS-2000-1 •' * i u For complete specifications: see www.samtec.com/design/ pdf_reports.asp; select EQCD Plating: Au over 50p" 1,27pm Ni ALSO AVAILABLE Aflpcnjpu G,635rdm 0,5mmpitch JyPCBteol Choice oi 50L1 & 7SS1 matched i~'pedan, systems Ca# Samtec.


    OCR Scan
    HS-2000-1 635rdm 1-800-SAMTEC-9 PDF

    UM9C

    Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
    Text: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma


    OCR Scan
    DDDQS16 2N2242 2N2368 2N2369 2N2369A 2N2410 N2475 2N2481 2N2501 2N2651 UM9C J 2N930 2N2651 PDF

    2N22A

    Abstract: 2N4271 2N3947 2N3326 2N3666
    Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419


    OCR Scan
    2n3302 to-18 2n3326 2n3388 2n3418 2n3419 n3420 2n3421 CBR30 0000S23 2N22A 2N4271 2N3947 2N3666 PDF

    2N3563

    Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
    Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15


    OCR Scan
    D0D0S15 2N5088 2N5127 O-106 2N5131 2N5133 2N5209 2N5210 2N3563 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 PDF

    2N2646 TO-92

    Abstract: 2N3484 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 Ujts 2N2160 ti 2n1671 2N4947 2N2646 2N4870 2n4948
    Text: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P* CENTRAL SEMICONDUCTOR bï »EJnfmba aooaaBb ? i l U N IJ U N C T IO N T R A N S IS T O R S (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a w ide tem perature range. These applications include: Pulse Generators, Saw Tooth


    OCR Scan
    CBR30 0000S23 O-105 O-106 2N2646 TO-92 2N3484 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 Ujts 2N2160 ti 2n1671 2N4947 2N2646 2N4870 2n4948 PDF

    2N2800

    Abstract: 2N2801 2N2837 2N2838 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A
    Text: ti CENTRAL SEM ICON DU CTOR : 1 V Ö VV OJ U CINI RAL D E I nû'î'JtiB ODDOSSG 3 T ¿ .ir n n ^ v n StrtlCUNÜUtTÜR an r * * / « •* VCE V eb hFE at •c V V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35 40 5 5 5 5 5


    OCR Scan
    2N2800 2N2801 2N2837 2N2838 -2N2904 2N2904A 2N2905 2N2905A CBR30 0000s23 2N2904 2N2906 2N2906A PDF

    N3020

    Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
    Text: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220


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    2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 CBR30 0000S23 N3020 2N2951 2N3114 2N3301 ST 2N3053 PDF

    2N4121

    Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
    Text: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30


    OCR Scan
    DDDDS13 2N4060 2N4061 2N4062- 2N4121 O-106 2N4122 O-106. 2N4125 2N4126 2N5139 2N4917 2N3639 2n5138 016 2N4062 2N5383 2N5857 2N5138 PDF

    MPS-A42

    Abstract: MPS-A43 K MPS a42
    Text: 19 8 9 9 6 3 /CENTRAL’S E M ICONDUCTOR" ó 1C 00232 • T ~ ^ &mSïfiâ bï g@esilg@6n^ stei? @g*p. de| MPS-A42 central g@BiiIe®si§lye£@r €®rp. C e n tra i s s m le o n c fu e to r C orp. ~ / 7 0000535 d MPS-A43 NPN JP SILICON HIGH VOLTAGE TRANSISTORS


    OCR Scan
    MPS-A42 MPS-A43 CBR30 0000S23 O-105 O-106 K MPS a42 PDF

    CQ920

    Abstract: CQ92A CQ92B CQ92D CQ92F CQ92M cbr3-p
    Text: n a ^ t a _CENTRAL S EM IC ON DUCTOR dooostt ^ T ~ T - ¿ s '- // CQ92F CQ92A CQ92B CQ92D CQ92M gGEmiËSQÊBgSP&û ^ @@^3* s@6û^@@nG9QBefior e @ p p . €@Bifrcal SeniBeO BItiU C tO r C S’p . central semiconductor Corp. TRI AC 0.8 AMPS 50 THRU 600 VOLTS


    OCR Scan
    D0005cà CQ92F CQ92A CQ92B CQ92D CQ92M cq92f CBR30 0000S23 O-105 CQ920 CQ92M cbr3-p PDF

    CR3U-005

    Abstract: No abstract text available
    Text: l?g?63 CENTRAL' SEMICONDUCTOR ~ >1 61C 00172 T - 0 3 -1 5 DE l D0DD17g 7 | c e n t r e il CR3U seBisieonsiMetoF e@rp. Central seiüieaitäyctor Corp. central Semiconductor Corp. SERIES ULTRA FAST RECOVERY RECTIFIER CASE 103 145 Adams Avenue Hauppauge, New York 11788


    OCR Scan
    CR3U-005 CR3U-Q10 CR3U-Q15 CR3U-Q20 CBR30 0000S23 O-105 O-106 PDF

    CS55AZ

    Abstract: CS55BZ CS55DZ CS55FZ CS55MZ KSH 123 scr 209
    Text: central semiconductor ]>EjnflTib3 DDDD3D7 CS55AZ CS55BZ CS55FZ CS55DZ CS55MZ e &aGb:eJ Stop.U£Ë^5BS3 Suj@? ©Qirpo £t>^3U gdBMBieeoBcgasefQE3 e@ i?g . GSBtâral Ê©raS(g@Bi2fiysÊ@p C e ^ p . J P SCR Central semiconductor Corp. 0.8 AMPS 50 THRU 600 VOLTS


    OCR Scan
    CS55AZ CS55BZ CS55FZ CS55DZ CS55MZ T0-92-18R CS55MZ KSH 123 scr 209 PDF

    t1p117

    Abstract: T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 D41K2 2N6548
    Text: 1989963 CENTRAL SEMICONDUCTOR ; CENTRAL tï SEMICONDUCTOR 6 i r noi 94 T-/n_?q D Ë J n f i tn t 3 DGaaim b T i T -.-5 3 - 3 / T \3 3 - £ 3 POWER DARLINGTON TRANSISTORS EPOXY le = O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° t o +150°C


    OCR Scan
    2N6548 2N6549 D40K1 D41K1 D40K2 D41K2 D40K3 D41K3 D40K4 D41K4 t1p117 T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 2N6548 PDF

    2N859

    Abstract: 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917
    Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385


    OCR Scan
    2n3117 to-18 2n4383 2n4384 2n4385 2n4386 CBR30 0000S23 2N859 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917 PDF

    CR160

    Abstract: CR160-005 CR160-020 CR160-040 CR160-060 CR160-080 CR160-100 CR160-120
    Text: CENTRAL SEMICOND UCT OR Li1 D □□□□ita o] r "I T - à t- ó / s> 160 Amperes General Purpose Silicon Power Rectifier L.1 de J ooooibo o | O CR160005 CR160oto CR160020 CR160- CR160040 060 CR160080 CR160100 CR160120 VRRM<v°«s 50 100 200 400 600 800


    OCR Scan
    CR160-005 CR160- CR160-020 CR160-040 CR160-060 CR160-080 CR160-100 CR160-120 1/2-20UNF-2A CR160 CR160-120 PDF

    Z6.8B

    Abstract: Z12B Z9.1B DIODE Z8.2B Z6.2B C1Z10B C1Z11B C1Z12B C1Z13B C1Z14B
    Text: CENTRAL SEMICONDUCTOR n a “n t a qddqeöi 1 WATT ZENER DIODE CSBafiFi9l r S0oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Sorp, AXIAL LEAD D015 EPOXY CASE Central semiconductor Corp. C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88


    OCR Scan
    C1Z10B C1Z11B C1Z12B C1Z13B C1Z14B CBR30 0000S23 O-105 O-106 Z6.8B Z12B Z9.1B DIODE Z8.2B Z6.2B PDF

    IN5374B

    Abstract: in5374 IN5373B C3Z10B C3Z11B C3Z12B C3Z47B C3Z50B Zener Diode 1N5368B C3Z52B
    Text: CENTRAL CENTRAL TYPE NO. SEMICONDUCTOR , 3 Watt Zener Diode • 5% Tolerance • Case C Zener Voltage Vz@lz Test Current Iz Zener Impedance Zz Maximum Zener Current IZM mA Volts mA Ohms C3Z6.2B C3Z6.8B C3Z7.5B C3Z8.2B C3Z9.1B 6.2 6.8 7.5 8.2 9.1 75 75 75 75


    OCR Scan
    C3Z47B C3Z50B C3Z51B C3Z52B C3Z56B C3Z10B C3Z62B C3Z11B C3Z68B C3Z12B IN5374B in5374 IN5373B Zener Diode 1N5368B PDF

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. S T F - H 4 0 1 IGYID A E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #11149. ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C lf= 20m A PARAMETER RED GREEN YELLOW UNITS PEAK WAVELENGTH FORWARD VOLTAGE TYP. 635 2.0 56 5


    OCR Scan
    STF-H401IGYID 585nm PDF

    2N3643 TO-105

    Abstract: 2N3566 2N3569 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N3568 central
    Text: T 1989963 "CENTRAL SEMICONDUCTOR 61C 00210 TËT| 1l i m b 3 QDD0210 D | L .1 NPN EPOXY - SWITCHING AND GENERAL PURPOSE VCB V CE V EB hFE at *C V V V min max mA 2N2711 2N2712 2N2713 2N2714 2N2923 18 18 18 18 25 18 18 18 18 25 5 5 5 5 5 30 75 30 75 90 90 225


    OCR Scan
    DD00S10 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926 2N3392 CBR12 2N3643 TO-105 2N3566 2N3569 2N3568 central PDF

    2n11

    Abstract: 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1420 2N910 2N911
    Text: CENTRAL SEMICONDUCTOR _1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR ti DE J n ñ n b 3 0 0 0 0 2 1 5 □ J f * 6 1 C 0 0 2 1 5 T >3 $ - ó ¡ NPN - METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. VCB VCE Veb V V V min hFE at *c VC E max mA V V 10 10 . 10


    OCR Scan
    2N910 2N911 2N912 2N956- 2N1052 2N1053 2N1054 2N1055 CBR30 0000S23 2n11 2N1116 2N1117 2N1420 PDF

    PCH200EG

    Abstract: pch200ER PC200TWRG1 PC200TR5
    Text: a?E j> LEDTRONICS üeiTiimn LEDTRONICS,Inc 5453705 0000320 7 • -"P 4 /-Z 2 » RIGHT ANGLE MOUNT- DIFFUSED £ CLEAR T O 5mm PC BOARD LEDs Model PC19Q/200 HI-EFF/ULTRA/BIC0L0R5/RESIS FEATURES: X RIGHT ANGLE MOUNT AT 0.25" CEN TERS. S ID E STACKABLE X CHOICE OF LED S: STD RED, H I-E F F IC , ULTRA TO 3000MCD,


    OCR Scan
    PC19Q/200 3000MCD, 12VDC 5380H) 635rtffl S85nm 570nm 555nm G35nm 585nm PCH200EG pch200ER PC200TWRG1 PC200TR5 PDF

    cr1120

    Abstract: cr108 CR1-005 CR1-010 CR1-020 CR1-040 CR1-060 CR1-080 CR1-100 CR1-120
    Text: 1989963 CENTRAL A SEM ICON DUCTOR bï 1 1.0-2.0 Amperes 61C dF| 0000153 00153 T - O f " 3 jp General Purpose Silicon Power Rectifier o V RRM volts> C R 1- C R 1- C R 1- C R1- C R1- C R 1- C R1- C R 1- 005 010 020 040 060 080 100 120 C R 2- C R2- C R2- C R2-


    OCR Scan
    CR1-005 CR1-010 CR1-020 CR1-040 CR1-060 CR1-080 CR1-100 CR1-120 CR2-005 CR2-010 cr1120 cr108 CR1-120 PDF

    MJ12005

    Abstract: CBR30
    Text: 61C 00248 •/ f - 1 3 - / 3 1989 963 CENTRAL ’SEMICONDUCTOR 0000E4Ö SlìtE3 ! °1 §@g3B9@@närae&@? 3 MJ12005 S e s r iic e & is iis e f ® ! ? c e r g » C e n tra l Z> NPN SILICON TRANSISTOR sattilc^iidssetor Corp. Central semiconductor Corp.


    OCR Scan
    MJ12005 CBR30 0000S23 O-105 O-106 PDF