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    638 TRANSISTOR Search Results

    638 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    638 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BC636

    Abstract: BC638 BC640
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC636 BC638 BC640 PDF

    bc640

    Abstract: Diode bc640 BC636 BC638
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 bc640 Diode bc640 BC636 BC638 PDF

    BC636

    Abstract: BC638 BC640
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC636 BC638 BC640 PDF

    BC636

    Abstract: BC638 BC640
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC636 BC638 BC640 PDF

    BC635 ECB

    Abstract: BC638
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 ECB BC638 PDF

    2SD2422

    Abstract: BC807-25T116 2SB1043 2sd2422 Datasheet DTA123JSATP 2SD2574 MMST8598T146 2SD1960 2sc5072 2SA1886
    Text: Transistors Maintenance Product List 638 Transistors FMaintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2


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    2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD2422 BC807-25T116 2SB1043 2sd2422 Datasheet DTA123JSATP 2SD2574 MMST8598T146 2SD1960 2sc5072 2SA1886 PDF

    BC635

    Abstract: BC636 BC638 BC640
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 BC636 BC638 BC640 PDF

    bc636

    Abstract: BC640-16 BC638-16 Plastic Encapsulate Transistors Diode bc640 transistor bC640 BC640 pnp bc636 transistor BC636-10 BC636-16
    Text: BC636/638/640 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE 3.5±0.2 4.55±0.2 14.3±0.2 4.5±0.2 Power Dissipation: PCM: 0.83 mW Tamb=25oC 0.43+0.08


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    BC636/638/640 BC636 BC640 BC638 -500mA -500mA, -50mA bc636 BC640-16 BC638-16 Plastic Encapsulate Transistors Diode bc640 transistor bC640 BC640 pnp bc636 transistor BC636-10 BC636-16 PDF

    CTN639

    Abstract: CTN640 transistor C 639 W CTN635 CTN636 CTN637 CTN638
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-237 Plastic Package CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS


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    ISO/TS16949 O-237 CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN639 CTN640 transistor C 639 W CTN635 CTN636 CTN637 CTN638 PDF

    639 TRANSISTOR PNP

    Abstract: bc636 BC640 Diode bc640 BC638 638 transistor transistor BC637 complement
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 639 TRANSISTOR PNP bc636 BC640 Diode bc640 BC638 638 transistor transistor BC637 complement PDF

    bc736

    Abstract: transistor C 639 W bc639 BC635 BC637
    Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage


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    BC635/637/639 BC635/638/640 BC635 BC637 BC639 bc736 transistor C 639 W bc639 BC635 BC637 PDF

    bc736

    Abstract: BC635 BC637 BC639
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc736 BC635 BC637 BC639 PDF

    BC638

    Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
    Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80


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    BC636/D BC636 BC638 BC640 BC636/D* BC638 bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola PDF

    bc638 motorola

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80


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    BC636/D BC636 BC638 BC640 BC636/D* bc638 motorola PDF

    bc736

    Abstract: bc635 BC637 BC639
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc736 bc635 BC637 BC639 PDF

    MCT2201

    Abstract: Opto-isolator
    Text: Issued November 1995 020-638 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is


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    MCT2201 MCT2201 1507C 10sec) 260mW 100x1 Opto-isolator PDF

    NPN transistor ECB TO-92

    Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    BC635/637/639 BC636/638/640 BC635 BC637 BC639 NPN transistor ECB TO-92 Bc637 BC635 ECB transistor C 639 W transistor BC637 complement PDF

    bc639

    Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    BC635/637/639 BC636/638/640 BC635 BC637 BC639 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild PDF

    transistor C639

    Abstract: transistor C635 c639 transistor C639 w
    Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635


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    BC635/637/639 BC635/638/640 BC635 BC637 BC639 transistor C639 transistor C635 c639 transistor C639 w PDF

    BC639 collector

    Abstract: BC635 transistor 639 bc639 640 TRANSISTOR NPN transistor BC637 complement BC637
    Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25t; Characteristic Collector Emitter Voltage at R a E = 1K ohm Collector Emitter Voltage Collector Emitter Voltage


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    BC635/637/639 BC635/638/640 BC635 BC637 BC639 BC639 collector transistor 639 640 TRANSISTOR NPN transistor BC637 complement PDF

    Untitled

    Abstract: No abstract text available
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic C ollector Emitter Voltage: at R B E = 1Kohm : : Collector Emitter Voltage: : :


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    BC636/638/640 BC635/637/639 BC636 BC638 BC640 PDF

    L0050A

    Abstract: 2N5096A lt 0210 2N5091A 2N5093A 2N5094A
    Text: HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS TYPES 2N5091A, 2N5093A, 2N5094A 2N5096A Solid State Devices Incorporated 14 830 Valley V iew Avenue La Mirada, California 9 0 638 Telephone 213 9 2 1 -9 6 6 0 TW X -910-583-4807 Z


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    TWX-910-583-4807 2N5091A, 2N5093A, 2N5094A 2N5096A 50mAdc 25mAdc, 150Vdc 100mAde, L0050A 2N5096A lt 0210 2N5091A 2N5093A 2N5094A PDF

    BC635 TRANSISTOR E C B

    Abstract: transistor C 639 W
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector Emitter Voltage at Rbe=1 Kohm Collector Emitter Voltage Collector Emitter Voltage


    OCR Scan
    BC635/637/639 BC635/638/640 BC635 BC637 BC639 BC635 TRANSISTOR E C B transistor C 639 W PDF

    Untitled

    Abstract: No abstract text available
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T a = 25 1C Sym bol C h aracte ristic Collector Emitter Voltage at R b e = 1 Kohm Collector Emitter Voltage Collector Emitter Voltage


    OCR Scan
    BC636/638/640 BC635/637/639 BC636 BC638 BC640 PDF