BC636
Abstract: BC638 BC640
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
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bc640
Abstract: Diode bc640 BC636 BC638
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
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Diode bc640
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BC636
Abstract: BC638 BC640
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
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BC636
Abstract: BC638 BC640
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
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BC635 ECB
Abstract: BC638
Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC635 ECB
BC638
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2SD2422
Abstract: BC807-25T116 2SB1043 2sd2422 Datasheet DTA123JSATP 2SD2574 MMST8598T146 2SD1960 2sc5072 2SA1886
Text: Transistors Maintenance Product List 638 Transistors FMaintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2
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2SA1543M
2SA933ASTP
2SC5040K
2SC2412KT146
2SA1549
2SA830STP
2SC5072
2SC4617TL
2SA1554
2SA821STP
2SD2422
BC807-25T116
2SB1043
2sd2422 Datasheet
DTA123JSATP
2SD2574
MMST8598T146
2SD1960
2sc5072
2SA1886
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BC635
Abstract: BC636 BC638 BC640
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
BC635
BC636
BC638
BC640
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bc636
Abstract: BC640-16 BC638-16 Plastic Encapsulate Transistors Diode bc640 transistor bC640 BC640 pnp bc636 transistor BC636-10 BC636-16
Text: BC636/638/640 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE 3.5±0.2 4.55±0.2 14.3±0.2 4.5±0.2 Power Dissipation: PCM: 0.83 mW Tamb=25oC 0.43+0.08
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BC636/638/640
BC636
BC640
BC638
-500mA
-500mA,
-50mA
bc636
BC640-16
BC638-16
Plastic Encapsulate Transistors
Diode bc640
transistor bC640
BC640
pnp bc636 transistor
BC636-10
BC636-16
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CTN639
Abstract: CTN640 transistor C 639 W CTN635 CTN636 CTN637 CTN638
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-237 Plastic Package CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
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ISO/TS16949
O-237
CTN635,
CTN637,
CTN639
CTN636,
CTN638,
CTN640
CTN639
CTN640
transistor C 639 W
CTN635
CTN636
CTN637
CTN638
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639 TRANSISTOR PNP
Abstract: bc636 BC640 Diode bc640 BC638 638 transistor transistor BC637 complement
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC636/638/640
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BC636
BC638
BC640
639 TRANSISTOR PNP
bc636
BC640
Diode bc640
BC638
638 transistor
transistor BC637 complement
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bc736
Abstract: transistor C 639 W bc639 BC635 BC637
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC635/638/640
BC635
BC637
BC639
bc736
transistor C 639 W
bc639
BC635
BC637
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bc736
Abstract: BC635 BC637 BC639
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC637
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BC638
Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80
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BC636/D
BC636
BC638
BC640
BC636/D*
BC638
bc640
BC636
bc640 pnp
transistors BC 293
bc640 motorola
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bc638 motorola
Abstract: No abstract text available
Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80
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BC636/D
BC636
BC638
BC640
BC636/D*
bc638 motorola
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bc736
Abstract: bc635 BC637 BC639
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
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BC637
BC639
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MCT2201
Abstract: Opto-isolator
Text: Issued November 1995 020-638 Data Pack F Transistor opto-isolator Data Sheet Device Transistor output opto-isolator MCT2201 RS stock no. 651-945 MCT2201 The MCT2201 is an opto-isolator with phototransistor output. A gallium arsenide infra-red emitting diode is
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MCT2201
MCT2201
1507C
10sec)
260mW
100x1
Opto-isolator
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NPN transistor ECB TO-92
Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
NPN transistor ECB TO-92
Bc637
BC635 ECB
transistor C 639 W
transistor BC637 complement
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bc639
Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter
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BC635/637/639
BC636/638/640
BC635
BC637
BC639
2bc639
fairchild date code
transistor BC637 complement
applications of Transistor BC639
bc639 fairchild
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transistor C639
Abstract: transistor C635 c639 transistor C639 w
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
transistor C639
transistor C635
c639
transistor C639 w
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BC639 collector
Abstract: BC635 transistor 639 bc639 640 TRANSISTOR NPN transistor BC637 complement BC637
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25t; Characteristic Collector Emitter Voltage at R a E = 1K ohm Collector Emitter Voltage Collector Emitter Voltage
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
BC639 collector
transistor 639
640 TRANSISTOR NPN
transistor BC637 complement
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Untitled
Abstract: No abstract text available
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic C ollector Emitter Voltage: at R B E = 1Kohm : : Collector Emitter Voltage: : :
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
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L0050A
Abstract: 2N5096A lt 0210 2N5091A 2N5093A 2N5094A
Text: HIGH VOLTAGE SILICON DIFFUSED PNP TRANSISTORS TYPES 2N5091A, 2N5093A, 2N5094A 2N5096A Solid State Devices Incorporated 14 830 Valley V iew Avenue La Mirada, California 9 0 638 Telephone 213 9 2 1 -9 6 6 0 TW X -910-583-4807 Z
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TWX-910-583-4807
2N5091A,
2N5093A,
2N5094A
2N5096A
50mAdc
25mAdc,
150Vdc
100mAde,
L0050A
2N5096A
lt 0210
2N5091A
2N5093A
2N5094A
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BC635 TRANSISTOR E C B
Abstract: transistor C 639 W
Text: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector Emitter Voltage at Rbe=1 Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC635/637/639
BC635/638/640
BC635
BC637
BC639
BC635 TRANSISTOR E C B
transistor C 639 W
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Untitled
Abstract: No abstract text available
Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T a = 25 1C Sym bol C h aracte ristic Collector Emitter Voltage at R b e = 1 Kohm Collector Emitter Voltage Collector Emitter Voltage
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BC636/638/640
BC635/637/639
BC636
BC638
BC640
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