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    64 X32 DRAM BGA Search Results

    64 X32 DRAM BGA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    MPC860PZQ50D4 Rochester Electronics LLC 32-BIT, 50MHz, RISC PROCESSOR, PBGA357, 25 X 25 MM, 1.27 MM PITCH, PLASTIC, BGA-357 Visit Rochester Electronics LLC Buy

    64 X32 DRAM BGA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    gk 7031

    Abstract: No abstract text available
    Text: W2637A, W2638A and W2639A LPDDR BGA Probes for Logic Analyzers and Oscilloscopes Data sheet Introduction The W2637A, W2638A and W2639A LPDDR BGA probes provide signal accessibility and probing of embedded memory designs directly at the ball grid array BGA package.


    Original     		PDF W2637A, W2638A W2639A 5990-3892EN gk 7031

    W2639A

    Abstract: lpddr W2638A-101 W3635A N5425 9104a Oscilloscope Probe to PC E2678A specification of Logic Analyzer W2638A
    Text: W2637A, W2638A and W2639A LPDDR BGA Probes for Logic Analyzers and Oscilloscopes Data sheet Introduction The W2637A, W2638A and W2639A LPDDR BGA probes provide signal accessibility and probing of embedded memory designs directly at the ball grid array BGA package.


    Original     		PDF W2637A, W2638A W2639A an120 5990-3892EN W2639A lpddr W2638A-101 W3635A N5425 9104a Oscilloscope Probe to PC E2678A specification of Logic Analyzer

    SH3-DSP

    Abstract: 7729R HJ945020 sdram pcb gerber hitachi sh3 HJ945010BP HJ945010 SH7729 SH7750 hitachi sh4
    Text: EP-MT-01001A-02 Hitachi MCM/MCP Products 日立 MCM/MCP プロダクツ 2001年 3月1日 株式会社 日立製作所 半導体グループ DRAM事業部 MCM設計部 製品技術Gr. Hitachi MCM/MCP Products EP-MT-01001A-02 1. 本書に記載の製品及び技術のうち「外国為替及び外国貿易法」に基づき安全保障貿易管理関連貨物・技術に該当するものを輸出する


    Original     		PDF EP-MT-01001A-02 512Mbit M/128Mbit 128M/256M SH7750 SH3-DSP 7729R HJ945020 sdram pcb gerber hitachi sh3 HJ945010BP HJ945010 SH7729 hitachi sh4

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    Untitled

    Abstract: No abstract text available
    Text: W2630 Series DDR2 BGA Probes for Logic Analyzers and Oscilloscopes Data Sheet The W2630 Series DDR2 BGA probes enable probing of embedded memory DIMMs directly at the ball grid array with Agilent logic analyzers and oscilloscopes Features The Agilent W2630 Series DDR2


    Original     		PDF W2630 signal69 5989-5964EN

    Samsung EOL

    Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
    Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM


    Original     		PDF 288-576Mb 10-20ns 18-72Mb 64Kb-16Mb 8Mb-64Mb 16Mb-512Mb 16Mb-1Gb 256Mb-2Gb 200Mhz -40oC Samsung EOL IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    sdr sdram reference

    Abstract: sdr sdram
    Text: SDR SDRAM E0364M20 Ver.2.0 (Previous Rev.0.3e) June 2004 (K) Japan DATA SHEET M2V64S50ETP-I 64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range) DESCRIPTION M2V64S50ETP-I is a 4-bank x 524,288-word x 32-bit, synchronous DRAM, with LVTTL interface.


    Original     		PDF E0364M20 M2V64S50ETP-I M2V64S50ETP-I 288-word 32-bit, 100MHz 133MHz M01E0107 sdr sdram reference sdr sdram

    Untitled

    Abstract: No abstract text available
    Text: SDR SDRAM E0364M11 Ver.1.1 (Previous Rev.0.3e) February 2004 (K) Japan PRELIMINARY DATA SHEET M2V64S50ETP-I 64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range) DESCRIPTION M2V64S50ETP-I is a 4-bank x 524,288-word x 32-bit, synchronous DRAM, with LVTTL interface.


    Original     		PDF E0364M11 M2V64S50ETP-I M2V64S50ETP-I 288-word 32-bit, 100MHz 133MHz M01E0107

    PC Oscilloscope Probe

    Abstract: N5426A Oscilloscope Probe to PC Probe Oscilloscope Connecting Oscilloscope Probe to PC W2631-97000 81204A AGILENT 1134A AGILENT TECHNOLOGIES DDR2 x32
    Text: W2630A Series DDR2 BGA Probes for Logic Analyzers and Oscilloscopes Data Sheet The W2630A series DDR2 BGA probes enable probing of embedded memory DIMMs directly at the ball grid array with Agilent logic analyzers and oscilloscopes Features The Agilent W2630A series DDR2


    Original     		PDF W2630A signal358 5989-5964EN PC Oscilloscope Probe N5426A Oscilloscope Probe to PC Probe Oscilloscope Connecting Oscilloscope Probe to PC W2631-97000 81204A AGILENT 1134A AGILENT TECHNOLOGIES DDR2 x32

    IS42VM83200D

    Abstract: No abstract text available
    Text: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42VM83200D IS42VM16160D IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb

    IS42SM32800D

    Abstract: 64 x32 dram bga IS42RM83200D-7TL IS42RM32800D
    Text: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Preliminary Information JULY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM83200D IS42SM16160D IS42SM32800D IS42RM83200D IS42RM16160D IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb 64 x32 dram bga IS42RM83200D-7TL IS42RM32800D

    IS42VM16160D-8TLI

    Abstract: IS42VM83200D
    Text: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information OCTOBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42VM83200D IS42VM16160D IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb IS42VM16160D-8TLI

    SM83200D

    Abstract: IS42RM32800D IS42SM16160D-7BL IS42RM16160D-7BLI IS42SM83200D IS42SM32800D IS42SM16160D-7BLI M3100
    Text: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES OCTOBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM83200D IS42SM16160D IS42SM32800D IS42RM83200D IS42RM16160D IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb SM83200D IS42RM32800D IS42SM16160D-7BL IS42RM16160D-7BLI IS42SM32800D IS42SM16160D-7BLI M3100

    IS42RM32800D

    Abstract: TSOP II 54 IS42SM32800d IS42SM83200D
    Text: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Preliminary Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM83200D IS42SM16160D IS42SM32800D IS42RM83200D IS42RM16160D IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb IS42RM32800D TSOP II 54 IS42SM32800d

    numonyx 106 ball

    Abstract: strataflash 512mbit strataflash 512 p33 512mbit numonyx 107-ball 512-Gbit Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 512-Mbit LX Family with LPSDRAM (x32) Datasheet Product Features „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Top or Bottom flash parameter configuration — 32-bit bus width


    Original     		PDF L18/L30 512-Mbit 256-Mbit 32-bit 16-Mbit x32SH x16SB x16/x32 numonyx 106 ball strataflash 512mbit strataflash 512 p33 512mbit numonyx 107-ball 512-Gbit Numonyx StrataFlash M18

    IS42VM83200D

    Abstract: TSOP II 54
    Text: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM APRIL 2012 FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3


    Original     		PDF IS42VM83200D IS42VM16160D IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb TSOP II 54

    IS42VM83200D

    Abstract: No abstract text available
    Text: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM APRIL 2012 FEATURES DESCRIPTION • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3


    Original     		PDF IS42VM83200D IS42VM16160D IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb MS-207

    128k x8 SRAM TSOP

    Abstract: ip9001
    Text: MEMORY ICs FUNCTION GUIDE 1. Asynchronous SRAM Ordering Information 4 8 VI XX XX X XXXX X X 1 10 11 8 12 XXX X X O PE R A TIN G Vcc MEMORY COM PONENT D E V IC E T Y P E PO W ER LIMITS SPEED O R G A N IZ A T IO N O PERATING TEM P. TEC H N O LO G Y O P E R A T IN G Vcc


    OCR Scan     		PDF 120ns 128k x8 SRAM TSOP ip9001

    SO-DIMM 144-pin

    Abstract: 64 x32 dram bga
    Text: C. Ordering Information Component 2_ 7_ _8_ _9_ KM 4 X X S XX X X X X X SAMSUNG Memory 11_ 12 X Min. Cycle Time Power DRAM Package Organization Feature Revision Density Interface Refresh # of banks 1. SAMSUNG Memory 7. # of banks 2 : 2Bartks 4 : 4Banks 2. DRAM


    OCR Scan     		PDF 400mil) 143MHz) 125MHz) 100MHz) L4K/64ms 2K/32ms 4K/64ms 8K/64ms SO-DIMM 144-pin 64 x32 dram bga