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    Untitled

    Abstract: No abstract text available
    Text: K7A203600B K7A203200B K7A201800B Preliminary 64Kx36/x32 & 128Kx18 Synchronous SRAM Document Title 64Kx36 & 64Kx32 & 128Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft Dec. 10. 2001 Preliminary 0.1 1. Add tCYC 250,225, 200MHz bin.


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    PDF K7A203600B K7A203200B K7A201800B 64Kx36/x32 128Kx18 64Kx36 64Kx32 128Kx18-Bit 200MHz

    KM736V687

    Abstract: KM736V687-10 KM736V687-8 KM736V687-9
    Text: PRELIMINARY KM736V687 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. History Draft Date Remark Rev. 0.0 Initial draft Nov. 02. 1996 Preliminary Rev. 1.0 Final spec release


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    PDF KM736V687 64Kx36 64Kx36-Bit 100TQFP 100-TQFP-1420A KM736V687 KM736V687-10 KM736V687-8 KM736V687-9

    Untitled

    Abstract: No abstract text available
    Text: K7A203600B K7A203200B 64Kx36/x32 Synchronous SRAM 2Mb Sync. Pipelined Burst SRAM Specification 100TQFP with Pb only INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K7A203600B K7A203200B 64Kx36/x32 100TQFP 100-TQFP-1420A

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM736V689A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 19. 1998 Preliminary 0.1 Change tOH Min value from 1.3 to 1.0 at tCYC 5.0 Change tHZC Min value from 1.3 to 1.0 at tCYC 5.0


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    PDF KM736V689A 64Kx36-Bit 64Kx36 183MHz, 225MHz 260mA 280mA 100-TQFP-1420A

    KM736V689A

    Abstract: No abstract text available
    Text: PRELIMINARY KM736V689A 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • The KM736V689A is a 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second


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    PDF KM736V689A 64Kx36 64Kx36-Bit KM736V689A 296-bit 36bits 100-TQFP-1420A

    KM736V687

    Abstract: KM736V687-10 KM736V687-8 KM736V687-9 64kx36
    Text: PRELIMINARY KM736V687 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system. And


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    PDF KM736V687 64Kx36 64Kx36-Bit KM736V687 100-TQFP-1420A KM736V687-10 KM736V687-8 KM736V687-9

    KM736V689A

    Abstract: No abstract text available
    Text: PRELIMINARY KM736V689A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 19. 1998 Preliminary 0.1 Change tOH Min value from 1.3 to 1.0 at tCYC 5.0 Change tHZC Min value from 1.3 to 1.0 at tCYC 5.0


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    PDF KM736V689A 64Kx36 64Kx36-Bit 183MHz, 225MHz 260mA 280mA 100-TQFP-1420A KM736V689A

    KM736V687A

    Abstract: KM736V687A-7 KM736V687A-8 KM736V687A-9 km736v6
    Text: KM736V687A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft July. 03. 1998 Preliminary 0.1 Change DC Characteristics. ICC value from 320mA to 250mA at -7. ICC value from 300mA to 230mA at -8.


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    PDF KM736V687A 64Kx36 64Kx36-Bit 320mA 250mA 300mA 230mA 280mA 200mA KM736V687A KM736V687A-7 KM736V687A-8 KM736V687A-9 km736v6

    K7A203200B

    Abstract: K7A203600B
    Text: K7A203600B K7A203200B 64Kx36/x32 Synchronous SRAM Document Title 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft Dec. 10. 2001 Preliminary 0.1 1. Add tCYC 250,225, 200MHz bin. Jan . 17. 2002


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    PDF K7A203600B K7A203200B 64Kx36/x32 64Kx36 64Kx32-Bit 200MHz 225MHz( 250/200/167MHz( K7A203200B K7A203600B

    KM736V687A

    Abstract: KM736V687A-7 KM736V687A-8 KM736V687A-9
    Text: KM736V687A 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. • Write Self-Timed Cycle. • On-Chip Address and Control Registers. • VDD= 3.3V+0.3V/-0.165V Power Supply.


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    PDF KM736V687A 64Kx36 64Kx36-Bit KM736V687A 100-TQFP-1420A KM736V687A-7 KM736V687A-8 KM736V687A-9

    Untitled

    Abstract: No abstract text available
    Text: IS64LF6436 IS64LF6432 ISSI 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM PRELIMINARY INFORMATION AUGUST 2003 DESCRIPTION FEATURES The ISSI IS64LF6432 and IS64LF6436 are high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, memory. IS64LF6432 is organized as 65,536 words by 32 bits and IS64LF6436 is


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    PDF IS64LF6436 IS64LF6432 64Kx36 100-Pin 5M-1982. PK13197LQ

    Untitled

    Abstract: No abstract text available
    Text: K7B203625B K7B203225B K7B201825B 64Kx36/x32 & 128Kx18 Synchronous SRAM Document Title 64Kx36/x32 & 128Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial draft Jan. 17. 2002 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


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    PDF K7B203625B K7B203225B K7B201825B 64Kx36/x32 128Kx18 128Kx18-Bit

    IS61LF6432A

    Abstract: IS61LF6436A
    Text: IS61LF6436A IS61LF6432A ISSI 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM OCTOBER 2005 DESCRIPTION FEATURES The ISSI IS61LF6432A and IS61LF6436A are high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, memory. IS61LF6432A is


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    PDF IS61LF6436A IS61LF6432A 64Kx36 IS61LF6432A IS61LF6436A Individual30 PK13197LQ 5M-1982.

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM736V689/L 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. History Draft Date Remark Rev. 0.0 Initial draft Nov. 17. 1996 Preliminary Rev. 1.0 Final spec release


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    PDF KM736V689/L 64Kx36 64Kx36-Bit 100TQFP 100-TQFP-1420A

    Untitled

    Abstract: No abstract text available
    Text: a W M YP64K36V-XTQX WHITE /MICROELECTRONICS 64Kx36 M o n o lith ic P ipelined Synchronous SRAM advanced * FEATURES • Fast Access Times of 8 and 10ns ■ Industrial and M ilitary Temperature Ranges ■ Fast O E Access Time of 7ns ■ W rite Pass-through Capability


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    PDF YP64K36V-XTQX 64Kx36 100-pin 30pFOutput

    Untitled

    Abstract: No abstract text available
    Text: Advance KM736V695/L 64Kx36 Synchronous SRAM 64K x 36-Bit Synchronous Pipelined Burst SRAM GENERAL DESCRIPTION FEATURES • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst • On-Chip Address Counter. • Self-Timed Write Cycle. • On- Chip Address and Control Registers.


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    PDF KM736V695/L 64Kx36 36-Bit KM736V695/L DD2M01b

    Untitled

    Abstract: No abstract text available
    Text: KM736V689/L 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION - Synchronous Operation. . 2 Stage Pipelined operation with 4 Burst. - On-Chip Address Counter. . Self-Timed Write Cycle. - On-Chip Address and Control Registers.


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    PDF KM736V689/L 64Kx36 64Kx36-Bit 100-TQFP-1420A 14ELECTRONICS 71b4145

    Untitled

    Abstract: No abstract text available
    Text: KM736V695/L 64Kx36 Synchronous SRAM 64Kx36~Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The KM736V695/L is a 2,359,296-bit Synchronous Static Ran­ dom Access Memory designed for high performance second


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    PDF KM736V695/L 64Kx36 KM736V695/L 296-bit 36bits

    vivax

    Abstract: No abstract text available
    Text: KM736V687A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM Revision History Draft Date REMARK Initial draft July. 03. 1998 Prelim inary 0.1 Change DC Characteristics. Icc value from 320m A to 250m A at -7. Icc value from 300m A to 230m A at -8.


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    PDF KM736V687A 64Kx36-Bit 64Kx36 100-TQFP-1420A vivax

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 64Kx36 Synchronous SRAM KM736V689A Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 19. 1998 Prelim inary 0.1 Change tOH Min value from 1.3 to 1.0 at tcyc 5.0


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    PDF 64Kx36 KM736V689A 64Kx36-Bit 100TQFP 183MHz 225MHz

    Untitled

    Abstract: No abstract text available
    Text: a WM Y64K36V-XTQX WHITE /MICROELECTRONICS 64Kx36 Monolithic Flow Through Synchronous SRAM advanced* FEATURES • Fast Access Times of 10 and 11 ns ■ Industrial and M ilitary Temperature Ranges ■ Fast OE Access Time of 7ns ■ W rite Pass-through Capability


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    PDF Y64K36V-XTQX 64Kx36 30pFOutput 100-pin

    Untitled

    Abstract: No abstract text available
    Text: 6 4 K x 36 S y n c h r o n o u s SR A M KM 736V689/ L t 64Kx36-Bit Sync hr ono us Pipelined Burst SR AM , 3.3V Power Datasheets for 100TQFP R e v is io n H is to ry R ev.N o. H Istorv Draft Date R e m ark Rev. 0.0 Initial draft Nov. Preliminary Rev. 1.0 Final spec release


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    PDF 736V689/ 64Kx36-Bit 100TQFP 100-TQ FP-1420A

    Untitled

    Abstract: No abstract text available
    Text: KM736V687 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • ■ • • • • The KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state perfor­


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    PDF KM736V687 64Kx36-Bit 100-TQFP-1420A 64Kx36 KM736V687

    Untitled

    Abstract: No abstract text available
    Text: KM736V687A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM Revision History Draft Date REMARK Initial draft July. 03. 1998 Prelim inary 0.1 Change DC Characteristics. Ic c value from 320m A to 250m A at -7. Ic c value from 300m A to 230m A at -8.


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    PDF KM736V687A 64Kx36 64Kx36-Bit