s3c2440 pin
Abstract: S3C2440A s3c2440A ARM920T S3C2440 Samsung S3C2440 samsung s3c2440 arm920t core TSXP ARM920T EINT20 128MBYTE
Text: Embest Mini2440-I Processor Card Features z z z z z z z z z Dimensions: 65mm x 45mm Temperature: 0~+70℃ Samsung's S3C2440A microcontroller based on a 1.33V Static ARM920T CPU core with MMU 64Mbyte SDRAM 32MB/128MB compatible 128Mbyte Nand flash (support 256Mbyte for option)
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Mini2440-I
S3C2440A
ARM920T
64Mbyte
32MB/128MB
128Mbyte
256Mbyte
12MHz
200MHz
32768Hz
s3c2440 pin
s3c2440A ARM920T
S3C2440
Samsung S3C2440
samsung s3c2440 arm920t core
TSXP
EINT20
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DELL inspiron power supply diagram
Abstract: Thinkpad 535X philips pcd500 dell inspiron ARMADA 300 ECC COMPAQ Toshiba Satelite C APPLE dock prius cf 44 pin to ide 1.8
Text: CompactFlash Card W7B6-S Series Version:1.02 June, 2001 Description CompactFlash™ Card W7B6-S series were made by Wintec Industries in Fremont, CA USA. It complies with CompactFlash™ specification, and is suitable for the usage of data storage memory medium for
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4MByte/96MByte/128MByte/160MByte/224MByte
W7B6016M1XG-S128
W7B6016M1XG-S7
W7B6032M1XG-S128
W7B6032M1XG-S7
W7B6048M1XG-S128
W7B6048M1XG-S7
W7B6064M1XG-S128
W7B6064M1XG-S7
W7B6032M1XG-S256
DELL inspiron power supply diagram
Thinkpad 535X
philips pcd500
dell inspiron
ARMADA 300 ECC
COMPAQ
Toshiba Satelite C
APPLE dock
prius
cf 44 pin to ide 1.8
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Untitled
Abstract: No abstract text available
Text: Graphic Display Controller D 0:31 HOST BUS INTERFACE PCI/Host Interface A(0:23) Pixel Bus MB86276 Video Input and Scaler Display Controller MD(0:31) 64MByte SDRAM or FCRAM External Memory Controller YUV/RGB Digital RGB 2D Rendering Engine MA(0:14) Description
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MB86276
64MByte
MB86276
MB86296
32-bit
16-bit
GDC-FS-21148-2/2006
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HSD8M64B8A
Abstract: No abstract text available
Text: HANBit HSD8M64B8A Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B8A GENERAL DESCRIPTION The HSD8M64B8A is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 2M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.
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HSD8M64B8A
64Mbyte
8Mx64-Bit)
144pin
HSD8M64B8A
400mil
144-pin
HSD8M64B8
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kr 720
Abstract: HSD8M64B4W HSD8M64B4W-10 HSD8M64B4W-10L HSD8M64B4W-12
Text: HANBit HSD8M64B4W Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B4W GENERAL DESCRIPTION The HSD8M64B4W is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.
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HSD8M64B4W
64Mbyte
8Mx64-Bit)
144pin
HSD8M64B4W
400mil
144-pin
kr 720
HSD8M64B4W-10
HSD8M64B4W-10L
HSD8M64B4W-12
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Untitled
Abstract: No abstract text available
Text: SM53616100UP3UU October 1996 Rev 2A SMART Modular Technologies SM53616100UP3UU 64MByte 16M x 36 CMOS DRAM Module General Description Features The SM53616100UP3UU is a high performance, 64-megabyte dynamic RAM module organized as 16M words by 36 bits, in a 72-pin, leadless, single-in-line
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SM53616100UP3UU
SM53616100UP3UU
64MByte
64-megabyte
72-pin,
SM536161002P3UU
SM536161004P3UU
16Mx1
64MByte
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Untitled
Abstract: No abstract text available
Text: SMART SM5720840UUEUGU Modular Technologies September 23, 1997 64MByte 8M x 72 DRAM Module - 4Mx4 based 168-pin DIMM, Buffered, ECC Features Part Numbers • • • • • • • • • • • SM57208400UEUGU SM57208401UEUGU SM57208408UEUGU SM57208409UEUGU
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SM5720840UUEUGU
64MByte
168-pin
SM57208400UEUGU
SM57208401UEUGU
SM57208408UEUGU
SM57208409UEUGU
60/70/80ns
300mil
AMP-390052-1
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Untitled
Abstract: No abstract text available
Text: SMART SM5720830U4Y6GU Modular Technologies Preliminary 64MByte 8M x 72 DRAM Module - 4Mx16, 4Mx4 based 168-pin DIMM, Non-buffered, Parity Features Part Numbers • • • • • • • • • • • SM572083014Y6GU SM572083194Y6GU Standard : JEDEC
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SM5720830U4Y6GU
64MByte
4Mx16,
168-pin
SM572083014Y6GU
SM572083194Y6GU
50/60/70ns
400mil
AMP-390052-6
4Mx18
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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chip amp ta 8268
Abstract: HSD16M32F4V 16MX32
Text: HANBit HSD16M32F4V/VA Synchronous DRAM Module 64Mbyte 16M x 32-Bit SMM based on 16Mx8, 4Banks, 4K Ref., 3.3V Part No. HSD16M32F4V/VA GENERAL DESCRIPTION The HSD16M32F4V/VA is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module
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HSD16M32F4V/VA
64Mbyte
32-Bit
16Mx8,
HSD16M32F4V/VA
120-pin,
60-pin
HSD16M32F4V-10
chip amp ta 8268
HSD16M32F4V
16MX32
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HSD16M32D4
Abstract: HSD16M32D4-10 HSD16M32D4-10L HSD16M32D4-12
Text: HANBit HSD16M32D4 Synchronous DRAM Module 64Mbyte 16Mx32-Bit , 100pin DIMM, 4Banks, 8K Ref., 3.3V Part No. HSD16M32D4 GENERAL DESCRIPTION The HSD16M32D4 is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 100-pin glass-epoxy substrate.
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HSD16M32D4
64Mbyte
16Mx32-Bit)
100pin
HSD16M32D4
400mil
100-pin
HSD16M32D4-10
HSD16M32D4-10L
HSD16M32D4-12
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Untitled
Abstract: No abstract text available
Text: December 1997 Revision 2.0 data sheet SOB8UL6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SOB8UL6484-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.
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SOB8UL6484-
64MByte
64-megabyte
144-pin,
MB81164842A-
MP-DRAMM-DS-20559-11/97
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Untitled
Abstract: No abstract text available
Text: May 1998 Revision 3.0 data sheet PDC8RV7284- 103/10 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC8RV7284-(103/10)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M words
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PDC8RV7284-
64MByte
PC/100
64-megabyte
168-pin,
MB81F64842B-
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WEDPN8M64VR-XBX
Abstract: No abstract text available
Text: WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a
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WEDPN8M64VR-XBX
8Mx64
64MByte
512Mb)
432-bit
16-bit
WEDPN8M64VR-XBX
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN8M72V-XBX
8Mx72
125MHz
WEDPN8M72V-XBX
64MByte
512Mb)
100MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72VR-XBX HI-RELIABILITY PRODUCT 8Mx72 Registered Synchronous DRAM *PRELIMINARY FEATURES GENERAL DESCRIPTION • Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728
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WEDPN8M72VR-XBX
8Mx72
WEDPN8M72VR-XBX
64MByte
512Mb)
100MHz
66MHz
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sh ee t SDC8UV7284- 67/84/100/125 T-S 64MByte (8M x 72) CMOS Synchronous DRAM Module General Description The SDC8UV7284-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as
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SDC8UV7284-
64MByte
64-megabtye
168-pin,
MB81164842A-
67Mhz
84Mhz
100Mhz
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Untitled
Abstract: No abstract text available
Text: cP IITSU November 1997 Revision 1.1 data sheet S0B8UL6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SOB8UL6484-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as
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S0B8UL6484-
64MByte
SOB8UL6484-
64-megabyte
144-pin,
B81164842A-
84Mhz
100Mhz
125Mhz
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. December 1997 Revision 2.0 data sheet SDC8UV6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8UV6484-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as
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SDC8UV6484-
64MByte
64-megabtye
168-pin,
MB81164842A-
67Mhz
84Mhz
100Mhz
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sheet SDC8UL7284- 67/84/100/125 T-S 64MByte (8M x 72) CMOS Synchronous DRAM Module General Description The SDC8UL7284-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as
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SDC8UL7284-
64MByte
64-megabyte
168-pin,
MB81164842A-
64MByte
67Mhz
84Mhz
100Mhz
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Untitled
Abstract: No abstract text available
Text: cP IITSU January 1998 Revision 1.0 data sheet PDC8UV6484A- 103/10 T-S 64MByte (8Mx 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC8UV6484A-(103/10)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M
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PDC8UV6484A-(
64MByte
PC/100
PDC8UV6484A-
64-megabyte
168-pin,
F64842B-
64MByte
168-pin
200-pin
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Untitled
Abstract: No abstract text available
Text: cP IITSU July 1998 Revision 1.0 data sheet PDC8R V7284J- 102/103 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC8RV7284J-(102/103)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M
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V7284J-
64MByte
PC/100
PDC8RV7284J-
64-megabyte
168-pin,
F64842C-
64MByte
10168-pin
200-pin
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Untitled
Abstract: No abstract text available
Text: cP IITSU May 1998 Revision 3.0 data sheet PDC8R V7284- 103/10 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC 8RV7284-(103/10)T-Sis a high performance, 64-megabyte synchronous, dynamic RAM module organized as8M words
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V7284-
64MByte
PC/100
8RV7284-
64-megabyte
168-pin,
F64842B-
64MByte
72-pin
144-pin
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Untitled
Abstract: No abstract text available
Text: cP October 1996 Revision 1.0 FUJI' DATA SHEET - * EDC8U V724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC8UV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module
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64MByte
EDC8UV724
64-megabyte
168-pins,
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