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    64DP Search Results

    64DP Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0364DPA-02#J0B Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
    RJP3064DPP-00#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
    RJP3064DPN-00#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
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    64DP Price and Stock

    Hirose Electric Co Ltd BM23PF0.8-64DP-0.35V(51)

    CONN HDR 60POS SMD GOLD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BM23PF0.8-64DP-0.35V(51) Cut Tape 19,566 1
    • 1 $1.27
    • 10 $1.033
    • 100 $0.8421
    • 1000 $0.68656
    • 10000 $0.63303
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    BM23PF0.8-64DP-0.35V(51) Digi-Reel 19,566 1
    • 1 $1.44
    • 10 $1.213
    • 100 $1.0888
    • 1000 $0.79184
    • 10000 $0.7176
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    BM23PF0.8-64DP-0.35V(51) Reel 10,000 10,000
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    • 10000 $0.6125
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    Avnet Americas BM23PF0.8-64DP-0.35V(51) Reel 16 Weeks 10,000
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    • 10000 $0.66691
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    Newark BM23PF0.8-64DP-0.35V(51) Reel 10,000
    • 1 $1.1
    • 10 $1.1
    • 100 $1.1
    • 1000 $1.1
    • 10000 $1.1
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    Onlinecomponents.com BM23PF0.8-64DP-0.35V(51)
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    • 10000 $0.704
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    Sager BM23PF0.8-64DP-0.35V(51) 10,000
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    • 10000 $0.92
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    Vishay Siliconix SIRA64DP-T1-RE3

    MOSFET N-CH 30V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA64DP-T1-RE3 Cut Tape 8,826 1
    • 1 $1.44
    • 10 $0.907
    • 100 $1.44
    • 1000 $0.42911
    • 10000 $0.42911
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    SIRA64DP-T1-RE3 Digi-Reel 8,826 1
    • 1 $1.44
    • 10 $0.907
    • 100 $1.44
    • 1000 $0.42911
    • 10000 $0.42911
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    SIRA64DP-T1-RE3 Reel 3,000 3,000
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    • 10000 $0.37562
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    Vishay Siliconix SIR164DP-T1-GE3

    MOSFET N-CH 30V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR164DP-T1-GE3 Digi-Reel 4,515 1
    • 1 $2
    • 10 $1.276
    • 100 $2
    • 1000 $0.62746
    • 10000 $0.62746
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    SIR164DP-T1-GE3 Cut Tape 4,515 1
    • 1 $2
    • 10 $1.276
    • 100 $2
    • 1000 $0.62746
    • 10000 $0.62746
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    SIR164DP-T1-GE3 Reel 3,000 3,000
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    Vishay Siliconix SIR464DP-T1-GE3

    MOSFET N-CH 30V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR464DP-T1-GE3 Reel 3,000 3,000
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    Vishay Siliconix SI7464DP-T1-GE3

    MOSFET N-CH 200V 1.8A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7464DP-T1-GE3 Digi-Reel 1,930 1
    • 1 $2.62
    • 10 $1.692
    • 100 $2.62
    • 1000 $0.85962
    • 10000 $0.85962
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    SI7464DP-T1-GE3 Cut Tape 1,930 1
    • 1 $2.62
    • 10 $1.692
    • 100 $2.62
    • 1000 $0.85962
    • 10000 $0.85962
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    New Advantage Corporation SI7464DP-T1-GE3 3,000 1
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    • 10000 $0.9854
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    64DP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TQM8M9074

    Abstract: Z11 Marking Code
    Text: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality


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    TQM8M9074 20-pin TQM8M9074 Z11 Marking Code PDF

    WiMAX transceivers

    Abstract: ah225
    Text: AH225 1W High Linearity InGaP HBT Amplifier Applications Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features Functional Block Diagram 400-2700 MHz 15.5 dB Gain @ 2140 MHz


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    AH225 AH225 WiMAX transceivers PDF

    ofdm transceiver 900mhz

    Abstract: 433 mhz rf power amplifier module efficiency 04023J2R2BBS
    Text: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure


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    TQP8M9013 24-pin TQP8M9013 ofdm transceiver 900mhz 433 mhz rf power amplifier module efficiency 04023J2R2BBS PDF

    Untitled

    Abstract: No abstract text available
    Text: ALM-32120 0.7GHz – 1.0GHz 2 Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-32120 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the


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    ALM-32120 ALM-32120 AV02-1349EN PDF

    toko 5c

    Abstract: MCH18 MCR03 SPA-2318 TAJB106K020R SPA-2318Z
    Text: SPA-2318 Z SPA-2318(Z) Low Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)


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    SPA-2318 1700MHz 2200MHz 1960MHz 2140MHz diPA-2318 SPA-2318 SPA-2318Z toko 5c MCH18 MCR03 TAJB106K020R SPA-2318Z PDF

    CM05X7R223K16AHF

    Abstract: of IC 9290 an 17830 a MGA-43628 MARKING 17305 CM05X7R AVAGO PA LTE ic 8279 block diagram
    Text: MGA-43528 High Linearity 1.93 – 1.995 GHz Power Amplifier Module Data Sheet Description Features Avago Technologies’ MGA-43528 is a fully matched power amplifier for use in the (1.93 – 1.995) GHz band. High linear output power at 5V is achieved through the


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    MGA-43528 MGA-43528 -50dBc AV02-3790EN CM05X7R223K16AHF of IC 9290 an 17830 a MGA-43628 MARKING 17305 CM05X7R AVAGO PA LTE ic 8279 block diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: S-Series SGD Fast, Low Noise, Digital Signal Generator Compact, easy to use, high performance signal generator for R&D, manufacturing and the field Features • Wide band cover: SGD-3 - 100 kHz to 3 GHz SGD-6 - 100 kHz to 6 GHz • +13 dBm output +20 dBm option


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    Compr441 PDF

    Untitled

    Abstract: No abstract text available
    Text: 910/911 SERIES Lampholders for 900/901 Cartridge Lamps Overview The 910 Series relampable lampholders accept any 900 Series cartridge lamp. The 911 Series lampholders accept any 901 Series cartridge lamp. These lampholders are of a ruggedized construction and are supplied with


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: plerowTM APM0882-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 32.3 dB @ 869 MHz = 31.7 dB @ 894 MHz · NF of 6.6 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply


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    APM0882-P29 40x40mm 10x10mm) APM0882 PDF

    Untitled

    Abstract: No abstract text available
    Text: plerowTM APM1765-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 36.3 dB @ 1750 MHz = 35.7 dB @ 1780 MHz · NF of 1.8 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply


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    APM1765-P29 40x40mm 13x13mm) APM1765 PDF

    Untitled

    Abstract: No abstract text available
    Text: plerowTM APM1842-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 34.5 dB @ 1805 MHz = 33.5 dB @ 1880 MHz · NF of 1.5 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply


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    APM1842-P29 40x40mm 13x13mm) APM1842 PDF

    Untitled

    Abstract: No abstract text available
    Text: plerowTM APM0866-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 32.2 dB @ 865 MHz = 31.8 31.8 dB dB @ @ 868 868 MHz MHz · NF of 6.6 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply


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    APM0866-P29 40x40mm 10x10mm) APM0866 PDF

    212-PIN

    Abstract: EUDYNA marking c7 sot-89 Eudyna Devices power amplifiers ISO-14001 KP035J P02221B2P P0222
    Text: P02221B2P Technical Note 500mW InGaP HBT Amplifier ♦Features 4 ♦Functional Diagram •1.8 to 2.5GHz Frequency Band ·+26.5dBm Output Power ·+43dBm Output IP3 ·+5V Single Supply Voltage ·14dB Gain at 2.14GHz ·Highly Reliable InGaP HBT ·Pb-free SOT-89 SMT Package


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    P02221B2P 500mW 43dBm 14GHz OT-89 KP035J P0222e. 212-PIN EUDYNA marking c7 sot-89 Eudyna Devices power amplifiers ISO-14001 KP035J P02221B2P P0222 PDF

    spa1526

    Abstract: No abstract text available
    Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs


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    SPA1526Z SOF-26 SPA1526Z SPA1526ZSQ SPA1526ZSR 850MHz spa1526 PDF

    preselector

    Abstract: No abstract text available
    Text: Product Brochure MS2690A/MS2691A/MS2692A Signal Analyzer MS2690A: 50 Hz to 6.0 GHz MS2691A: 50 Hz to 13.5 GHz MS2692A: 50 Hz to 26.5 GHz The MS2690A/MS2691A/MS2692A MS269xA Signal Analyzer has the excellent general level accuracy, dynamic range and performance of a high-end spectrum analyzer.


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    MS2690A/MS2691A/MS2692A MS2690A: MS2691A: MS2692A: MS269xA) MS269xA-E-A-1- 25/MAR/2014 preselector PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Brochure MS2830A Signal Analyzer MS2830A-040: 9 kHz to 3.6 GHz MS2830A-041: 9 kHz to 6 GHz MS2830A-043: 9 kHz to 13.5 GHz MS2830A-044: 9 kHz to 26.5 GHz∗ MS2830A-045: 9 kHz to 43 GHz∗ ∗: See catalog for MS2830A-044/045. The MS2830A is a high-speed, high-performance, cost-effective Spectrum Analyzer/Signal Analyzer.


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    MS2830A MS2830A-040: MS2830A-041: MS2830A-043: MS2830A-044: MS2830A-045: MS2830A-044/045. MS2830A J1556A MS2830A-020/120/021/121 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Brochure MS2830A Signal Analyzer MS2830A-040: 9 kHz to 3.6 GHz MS2830A-041: 9 kHz to 6 GHz MS2830A-043: 9 kHz to 13.5 GHz MS2830A-044: 9 kHz to 26.5 GHz∗ MS2830A-045: 9 kHz to 43 GHz∗ ∗: See catalog for MS2830A-044/045. The MS2830A is a high-speed, high-performance, cost-effective Spectrum Analyzer/Signal Analyzer.


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    MS2830A MS2830A-040: MS2830A-041: MS2830A-043: MS2830A-044: MS2830A-045: MS2830A-044/045. MS2830A J1556A MS2830A-020/120/021/121 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz


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    RT233 50MHz 33dBm 36dBm 900MHz IMT-2000 WP-22 RT233 IMT-2000, PDF

    WP-22

    Abstract: No abstract text available
    Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


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    RT240J RT240 50MHz 40dBm 43dBm 900MHz IMT-2000 WP-22 WP-12 RT240 PDF

    TQP8M9013

    Abstract: ofdm transceiver 900mhz 04023J2R2BBS 04023J1R0BBS LL1608-FSL2N7S
    Text: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure


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    TQP8M9013 24-pin TQP8M9013 ofdm transceiver 900mhz 04023J2R2BBS 04023J1R0BBS LL1608-FSL2N7S PDF

    Untitled

    Abstract: No abstract text available
    Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2


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    CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P PDF

    AP601

    Abstract: AP601-F AP601-PCB1960 AP601-PCB2140 AP601-PCB900 JESD22-A114
    Text: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT


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    AP601 AP601 JESD22-A114 JESD22-C101 J-STD-020 1-800-WJ1-4401 AP601-F AP601-PCB1960 AP601-PCB2140 AP601-PCB900 JESD22-A114 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27150MP 150 W, 2300-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27150MP is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27150MP ideal for 2.3 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


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    CGHV27150MP CGHV27150MP CGHV27 PDF

    CSB800A

    Abstract: T6772 T6083 parcor POWER AMPLYFIER reley T6803 "speech synthesis" parcor sb 320 toshiba audio power amplifier DOC3719
    Text: _ _ .„„.INTEGRATED CIRCUIT T O SH IB A TECHNICAL DATA T6803 VOICE SYNTHESIS L S I T6803 1. General Description The T6083 is a single chip PARCOR voice synthesis LSI with a builtin voice data ROM 64K bits and low-pass filter circuit. 2. Featrures o


    OCR Scan
    T6803 T6083 CSB800A CSB800A T6772 parcor POWER AMPLYFIER reley T6803 "speech synthesis" parcor sb 320 toshiba audio power amplifier DOC3719 PDF