TQM8M9074
Abstract: Z11 Marking Code
Text: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality
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TQM8M9074
20-pin
TQM8M9074
Z11 Marking Code
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WiMAX transceivers
Abstract: ah225
Text: AH225 1W High Linearity InGaP HBT Amplifier Applications Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features Functional Block Diagram 400-2700 MHz 15.5 dB Gain @ 2140 MHz
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AH225
AH225
WiMAX transceivers
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ofdm transceiver 900mhz
Abstract: 433 mhz rf power amplifier module efficiency 04023J2R2BBS
Text: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure
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TQP8M9013
24-pin
TQP8M9013
ofdm transceiver 900mhz
433 mhz rf power amplifier module efficiency
04023J2R2BBS
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Untitled
Abstract: No abstract text available
Text: ALM-32120 0.7GHz – 1.0GHz 2 Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-32120 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the
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ALM-32120
ALM-32120
AV02-1349EN
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toko 5c
Abstract: MCH18 MCR03 SPA-2318 TAJB106K020R SPA-2318Z
Text: SPA-2318 Z SPA-2318(Z) Low Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)
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SPA-2318
1700MHz
2200MHz
1960MHz
2140MHz
diPA-2318
SPA-2318
SPA-2318Z
toko 5c
MCH18
MCR03
TAJB106K020R
SPA-2318Z
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CM05X7R223K16AHF
Abstract: of IC 9290 an 17830 a MGA-43628 MARKING 17305 CM05X7R AVAGO PA LTE ic 8279 block diagram
Text: MGA-43528 High Linearity 1.93 – 1.995 GHz Power Amplifier Module Data Sheet Description Features Avago Technologies’ MGA-43528 is a fully matched power amplifier for use in the (1.93 – 1.995) GHz band. High linear output power at 5V is achieved through the
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MGA-43528
MGA-43528
-50dBc
AV02-3790EN
CM05X7R223K16AHF
of IC 9290
an 17830 a
MGA-43628
MARKING 17305
CM05X7R
AVAGO PA LTE
ic 8279 block diagram
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Untitled
Abstract: No abstract text available
Text: S-Series SGD Fast, Low Noise, Digital Signal Generator Compact, easy to use, high performance signal generator for R&D, manufacturing and the field Features • Wide band cover: SGD-3 - 100 kHz to 3 GHz SGD-6 - 100 kHz to 6 GHz • +13 dBm output +20 dBm option
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Compr441
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Untitled
Abstract: No abstract text available
Text: plerowTM APM0882-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 32.3 dB @ 869 MHz = 31.7 dB @ 894 MHz · NF of 6.6 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply
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APM0882-P29
40x40mm
10x10mm)
APM0882
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Untitled
Abstract: No abstract text available
Text: plerowTM APM1765-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 36.3 dB @ 1750 MHz = 35.7 dB @ 1780 MHz · NF of 1.8 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply
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APM1765-P29
40x40mm
13x13mm)
APM1765
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Untitled
Abstract: No abstract text available
Text: plerowTM APM1842-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 34.5 dB @ 1805 MHz = 33.5 dB @ 1880 MHz · NF of 1.5 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply
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APM1842-P29
40x40mm
13x13mm)
APM1842
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Untitled
Abstract: No abstract text available
Text: plerowTM APM0866-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 32.2 dB @ 865 MHz = 31.8 31.8 dB dB @ @ 868 868 MHz MHz · NF of 6.6 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply
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APM0866-P29
40x40mm
10x10mm)
APM0866
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212-PIN
Abstract: EUDYNA marking c7 sot-89 Eudyna Devices power amplifiers ISO-14001 KP035J P02221B2P P0222
Text: P02221B2P Technical Note 500mW InGaP HBT Amplifier ♦Features 4 ♦Functional Diagram •1.8 to 2.5GHz Frequency Band ·+26.5dBm Output Power ·+43dBm Output IP3 ·+5V Single Supply Voltage ·14dB Gain at 2.14GHz ·Highly Reliable InGaP HBT ·Pb-free SOT-89 SMT Package
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P02221B2P
500mW
43dBm
14GHz
OT-89
KP035J
P0222e.
212-PIN
EUDYNA
marking c7 sot-89
Eudyna Devices power amplifiers
ISO-14001
KP035J
P02221B2P
P0222
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spa1526
Abstract: No abstract text available
Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs
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SPA1526Z
SOF-26
SPA1526Z
SPA1526ZSQ
SPA1526ZSR
850MHz
spa1526
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Untitled
Abstract: No abstract text available
Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT
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SPA2318Z
SPA2318ZLow
1700MHz
2200MHz
SPA2318Z
1960MHz
2140MHz
SPA2318ZSQ
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Untitled
Abstract: No abstract text available
Text: Product Brochure MS2830A Signal Analyzer MS2830A-040: 9 kHz to 3.6 GHz MS2830A-041: 9 kHz to 6 GHz MS2830A-043: 9 kHz to 13.5 GHz MS2830A-044: 9 kHz to 26.5 GHz∗ MS2830A-045: 9 kHz to 43 GHz∗ ∗: See catalog for MS2830A-044/045. The MS2830A is a high-speed, high-performance, cost-effective Spectrum Analyzer/Signal Analyzer.
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MS2830A
MS2830A-040:
MS2830A-041:
MS2830A-043:
MS2830A-044:
MS2830A-045:
MS2830A-044/045.
MS2830A
J1556A
MS2830A-020/120/021/121
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Untitled
Abstract: No abstract text available
Text: Product Brochure MS2830A Signal Analyzer MS2830A-040: 9 kHz to 3.6 GHz MS2830A-041: 9 kHz to 6 GHz MS2830A-043: 9 kHz to 13.5 GHz MS2830A-044: 9 kHz to 26.5 GHz∗ MS2830A-045: 9 kHz to 43 GHz∗ ∗: See catalog for MS2830A-044/045. The MS2830A is a high-speed, high-performance, cost-effective Spectrum Analyzer/Signal Analyzer.
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MS2830A
MS2830A-040:
MS2830A-041:
MS2830A-043:
MS2830A-044:
MS2830A-045:
MS2830A-044/045.
MS2830A
J1556A
MS2830A-020/120/021/121
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Untitled
Abstract: No abstract text available
Text: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz
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RT233
50MHz
33dBm
36dBm
900MHz
IMT-2000
WP-22
RT233
IMT-2000,
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WP-22
Abstract: No abstract text available
Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz
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RT240J
RT240
50MHz
40dBm
43dBm
900MHz
IMT-2000
WP-22
WP-12
RT240
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TQP8M9013
Abstract: ofdm transceiver 900mhz 04023J2R2BBS 04023J1R0BBS LL1608-FSL2N7S
Text: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure
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TQP8M9013
24-pin
TQP8M9013
ofdm transceiver 900mhz
04023J2R2BBS
04023J1R0BBS
LL1608-FSL2N7S
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Untitled
Abstract: No abstract text available
Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2
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CGHV22200
CGHV22200
CGHV22200F
CGHV22
GHV22200P
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AP601
Abstract: AP601-F AP601-PCB1960 AP601-PCB2140 AP601-PCB900 JESD22-A114
Text: AP601 High Dynamic Range 1.8W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +32.5 dBm P1dB • -51 dBc ACLR @ ¼W PAVG • -55 dBc IMD3 @ ¼W PEP Functional Diagram The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT
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AP601
AP601
JESD22-A114
JESD22-C101
J-STD-020
1-800-WJ1-4401
AP601-F
AP601-PCB1960
AP601-PCB2140
AP601-PCB900
JESD22-A114
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGHV27150MP 150 W, 2300-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27150MP is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27150MP ideal for 2.3 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is
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CGHV27150MP
CGHV27150MP
CGHV27
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Untitled
Abstract: No abstract text available
Text: ALM-31222 1.7-2.7GHz 1-Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-31222 is a high linearity 1 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs
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ALM-31222
ALM-31222
AV02-1179EN
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Untitled
Abstract: No abstract text available
Text: ALM-31122 700MHz - 1GHz 1-Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-31122 is a high linearity 1 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the
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ALM-31122
700MHz
ALM-31122
22-lead
AV02-1178EN
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