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    64K BIT STATIC RAM Search Results

    64K BIT STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy

    64K BIT STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ph44

    Abstract: 71V016 IDT71V016
    Text: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT  COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM


    Original     		IDT71V016 16-BIT) 15/20/25ns 44-pin IDT71V016 576-bit ph44 71V016 PDF

    IDT71016

    Abstract: No abstract text available
    Text: IDT71016 CMOS STATIC RAM 1 MEG 64K x 16-BIT  COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71016 CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times


    Original     		IDT71016 16-BIT) 15/20/25ns 44-pin IDT71016 576-bit PDF

    71V016

    Abstract: datasheet for 64K RAM ph44 IDT71V016
    Text: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times


    Original     		IDT71V016 16-BIT) 15/20/25ns 44-pin IDT71V016 576-bit 200mV 71V016 datasheet for 64K RAM ph44 PDF

    125OC

    Abstract: IDT7187 IDT7187L IDT7187S
    Text: IDT7187S IDT7187L CMOS Static RAM 64K 64K x 1-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available.


    Original     		IDT7187S IDT7187L IDT7187 536-bit IDT7187 IDT7187S/L 11/xx/99 x4033 125OC IDT7187L IDT7187S PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT7187S IDT7187L CMOS Static RAM 64K 64K x 1-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available.


    Original     		IDT7187S IDT7187L 25/35/45/55/70/85ns 22-pin MIL-STD-883, IDT7187 536-bit D22-1) IDT7187S/L PDF

    7187L55

    Abstract: 7187L45
    Text: IDT7187S IDT7187L CMOS Static RAM 64K 64K x 1-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available.


    Original     		IDT7187S IDT7187L IDT7187 536-bit IDT7187 D22-1) IDT7187S/L 11/xx/99 x4033 7187L55 7187L45 PDF

    TIM CS

    Abstract: 125OC IDT7187 IDT7187L IDT7187S a7122 7187L45
    Text: IDT7187S IDT7187L CMOS Static RAM 64K 64K x 1-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ The IDT7187 is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. Access times as fast as 25ns are available.


    Original     		IDT7187S IDT7187L IDT7187 536-bit IDT7187 D22-1) IDT7187S/L 11/xx/99 TIM CS 125OC IDT7187L IDT7187S a7122 7187L45 PDF

    101490

    Abstract: datasheet for 64K RAM ECL-10K SO24-4 1 bit sram DSC8001
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM Integrated Device Technology, Inc. IDT10490 IDT100490 IDT101490 FEATURES: DESCRIPTION: • • • • • • • • The IDT10490, IDT100490 and IDT101490 are 65,536-bit high-speed BiCMOS ECL static random access memories


    Original     		IDT10490 IDT100490 IDT101490 IDT10490, IDT100490 IDT101490 536-bit ECL-10K ECL-100K ECL-101K 101490 datasheet for 64K RAM ECL-10K SO24-4 1 bit sram DSC8001 PDF

    101490

    Abstract: DSC8001 SRAM 64Kx1
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM  Integrated Device Technology, Inc. IDT10490 IDT100490 IDT101490 FEATURES: DESCRIPTION: • • • • • • • • The IDT10490, IDT100490 and IDT101490 are 65,536-bit high-speed BiCMOS ECL static random access memories


    Original     		IDT10490 IDT100490 IDT101490 IDT10490, IDT100490 IDT101490 536-bit ECL-10K ECL-100K ECL-101K 101490 DSC8001 SRAM 64Kx1 PDF

    A1320

    Abstract: 6116 CMOS RAM IDT71V016 SO44-2
    Text: IDT71V016 3.3V CMOS Static RAM 1 Meg 64K x 16-Bit Features Description ◆ The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology,


    Original     		IDT71V016 16-Bit) IDT71V016 576-bit 71V016SA. S-0003 x4033 A1320 6116 CMOS RAM SO44-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS Static RAM 1 Meg 64K x 16-Bit IDT71016S/NS Features Description ◆ The IDT71016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with


    Original     		16-Bit) IDT71016S/NS IDT71016 576-bit PDF

    datasheet for 64K RAM

    Abstract: IDT71016 SO44-2 71016s 71016
    Text: CMOS Static RAM 1 Meg 64K x 16-Bit IDT71016 Features Description ◆ The IDT71016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with


    Original     		16-Bit) IDT71016 IDT71016 576-bit datasheet for 64K RAM SO44-2 71016s 71016 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT 7MP456 256K 64K x 4-BIT C M O S STATIC RAM PLASTIC SIP M ODULE FEATURES: DESCRIPTION: • High-density 256K (64K x 4) CMOS static RAM module The IDT7MP456 is a 256K (64K x 4-bit) high-speed static RAM m odule constructed on an epoxy laminate surface using four


    OCR Scan     		28-pin IDT7187 7MP456 200mV IDT7MP456 8MP456 S13-182 PDF

    Untitled

    Abstract: No abstract text available
    Text: i Integrated DeviceTechnolc>3y Inc 256K 64K x 4-BIT CM O S STATIC RAM PLASTIC SIP M O DULE IDT7MP456 FEATURES: DESCRIPTION: • High-density 256K (64K x 4) CMOS static RAM module The IDT7MP456 is a 256K (64K x 4-bit) high-speed static RAM module constructed on an epoxy laminate surface using four


    OCR Scan     		IDT7MP456 IDT7MP456 IDT7187 28-pln 8MP456 PDF

    DSC-703

    Abstract: No abstract text available
    Text: IDT 7MC4018 64K x 6 CMOS STATIC RAM CERAMIC SIP MODULE WITH SEPARATE DATA I/O FEATURES: DESCRIPTION: • High-density 64K x 6 CMOS static RAM module The IDT7MC4018 isa 64K x 6-bit high-speed static RAM module constructed on a co-fired ceram ic substrate using six IDT7187


    OCR Scan     		40-pin IDT7187S, MIL-STD-883, 7MC4018 DSC-703 PDF

    M67A

    Abstract: MCM67A618AFN15 xsxx
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 64K x 18 Bit Asynchronous/ Latched Address Fast Static RAM MCM67A618A The MCM67A618A is a 1,179,648 bit latched address static random access memory organized as 65,536 words of 18 bits. The device integrates a 64K x 18


    OCR Scan     		MCM67A618A MCM67A618A 67A618A MCM67A618AFN10 MCM67A618AFN12 MCM67A618AFN15 M67A MCM67A618AFN15 xsxx PDF

    EDI8808CB

    Abstract: No abstract text available
    Text: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM QiF MM1]©i 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory Static RAM organized as 8Kx8.


    OCR Scan     		EDI8808CB EDI8808CB 536bit, MIL-STD-883, D02VSS A0-A12 PDF

    101490

    Abstract: No abstract text available
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 64K x 1-BIT SRAM IDT10490 IDT100490 IDT101490 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT10490, IDT100490 and IDT101490 are 65,536-bit high-speed BiCEMOS ECL static random access memo­


    OCR Scan     		IDT10490 IDT100490 IDT101490 536-words IDT10490, IDT101490 536-bit IDT100490, 101490 PDF

    MCM67A618B

    Abstract: MCM67A618BFN10
    Text: MOTOROLA Order this document by MCM67A618B/D SEMICONDUCTOR TECHNICAL DATA MCM67A618B Advance Information 64K x 18 Bit Asynchronous/ Latched Address Fast Static RAM The MCM67A618B is a 1,179,648 bit latched address static random access memory organized as 65,536 words of 18 bits. The device integrates a 64K x 18


    OCR Scan     		MCM67A618B/D MCM67A618B MCM67A618B MCM67A618BFN10 PDF

    Untitled

    Abstract: No abstract text available
    Text: L7C187 64K x 1 Static RAM Features_ Description_ □ 64K by 1 Static RAM with separate I/O , Chip Select power down The L7C187 is a high-performance, low-power CMOS static Random Access Memory. The storage circuitry is organized as 65,536 words by 1 bit


    OCR Scan     		L7C187 L7C187 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS62253A PRELIMINARY 64K x 4 CMOS Static RAM FEATURES DESCRIPTION Fast Access Times: 20/25 ns The MS62253A is a very high speed 256K-bit static RAM organized as 64K x 4. Fully static in operation. Chip Enable E reduces power to the chip when inactive


    OCR Scan     		MS62253A MS62253A 256K-bit 28-Pin, 300-MIL MS62253A-20NC P28-7 MS62253A-20RC PDF

    7m812

    Abstract: IDT7M S1319 Idt7m812
    Text: 512K 6 4 K x 8-BIT or 64K x 9-BIT C M O S STATIC RAM M ODULE IDT 7M812 IDT 7M912 FEATURES: DESCRIPTION: • High-density 512K-bi1 C M O S static RAM module • 64K x 8 (IDT7M 812) or 64K x 9 (IDT7M 912) configuration • Fast access times The ID T7M 812/ID T7M 912 are 512K-bit high-speed CM OS


    OCR Scan     		512K-bi1 240yW IDT7187 7M812 7M912 812/ID MIL-STD-883, 7M912 IDT7M S1319 Idt7m812 PDF

    A3738

    Abstract: CA1023 8kx8 sram
    Text: ^EDI _ EDI8808CB Electronic Designs Inc High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory • Access Times 20,25,35, and 45ns


    OCR Scan     		EDI8808CB EDI8808CB 536bit, D02VSS 0-A12 A3738 CA1023 8kx8 sram PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL / — MS62253A 64K x 4 CMOS Static RAM ^ FEATURES DESCRIPTION • Fast Access Times: 20/25 ns The MS62253A is a very high speed 256K-bit static RAM organized as 64K x 4. Fully static in operation. Chip Enable E reduces power to the chip when inactive


    OCR Scan     		MS62253A MS62253A 256K-bit 200mV MS62253A-20NC MS62253A-20RC MS62253A-25NC NIS62253A-25RC P28-7 R28-1 PDF