Untitled
Abstract: No abstract text available
Text: K7A203600B K7A203200B K7A201800B Preliminary 64Kx36/x32 & 128Kx18 Synchronous SRAM Document Title 64Kx36 & 64Kx32 & 128Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft Dec. 10. 2001 Preliminary 0.1 1. Add tCYC 250,225, 200MHz bin.
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K7A203600B
K7A203200B
K7A201800B
64Kx36/x32
128Kx18
64Kx36
64Kx32
128Kx18-Bit
200MHz
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KM736V687
Abstract: KM736V687-10 KM736V687-8 KM736V687-9
Text: PRELIMINARY KM736V687 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. History Draft Date Remark Rev. 0.0 Initial draft Nov. 02. 1996 Preliminary Rev. 1.0 Final spec release
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KM736V687
64Kx36
64Kx36-Bit
100TQFP
100-TQFP-1420A
KM736V687
KM736V687-10
KM736V687-8
KM736V687-9
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Untitled
Abstract: No abstract text available
Text: K7A203600B K7A203200B 64Kx36/x32 Synchronous SRAM 2Mb Sync. Pipelined Burst SRAM Specification 100TQFP with Pb only INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7A203600B
K7A203200B
64Kx36/x32
100TQFP
100-TQFP-1420A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM736V689A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 19. 1998 Preliminary 0.1 Change tOH Min value from 1.3 to 1.0 at tCYC 5.0 Change tHZC Min value from 1.3 to 1.0 at tCYC 5.0
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KM736V689A
64Kx36-Bit
64Kx36
183MHz,
225MHz
260mA
280mA
100-TQFP-1420A
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KM736V689A
Abstract: No abstract text available
Text: PRELIMINARY KM736V689A 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • The KM736V689A is a 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second
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KM736V689A
64Kx36
64Kx36-Bit
KM736V689A
296-bit
36bits
100-TQFP-1420A
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KM736V687
Abstract: KM736V687-10 KM736V687-8 KM736V687-9 64kx36
Text: PRELIMINARY KM736V687 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system. And
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KM736V687
64Kx36
64Kx36-Bit
KM736V687
100-TQFP-1420A
KM736V687-10
KM736V687-8
KM736V687-9
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PDF
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KM736V689A
Abstract: No abstract text available
Text: PRELIMINARY KM736V689A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 19. 1998 Preliminary 0.1 Change tOH Min value from 1.3 to 1.0 at tCYC 5.0 Change tHZC Min value from 1.3 to 1.0 at tCYC 5.0
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KM736V689A
64Kx36
64Kx36-Bit
183MHz,
225MHz
260mA
280mA
100-TQFP-1420A
KM736V689A
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PDF
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KM736V687A
Abstract: KM736V687A-7 KM736V687A-8 KM736V687A-9 km736v6
Text: KM736V687A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft July. 03. 1998 Preliminary 0.1 Change DC Characteristics. ICC value from 320mA to 250mA at -7. ICC value from 300mA to 230mA at -8.
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KM736V687A
64Kx36
64Kx36-Bit
320mA
250mA
300mA
230mA
280mA
200mA
KM736V687A
KM736V687A-7
KM736V687A-8
KM736V687A-9
km736v6
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K7A203200B
Abstract: K7A203600B
Text: K7A203600B K7A203200B 64Kx36/x32 Synchronous SRAM Document Title 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft Dec. 10. 2001 Preliminary 0.1 1. Add tCYC 250,225, 200MHz bin. Jan . 17. 2002
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K7A203600B
K7A203200B
64Kx36/x32
64Kx36
64Kx32-Bit
200MHz
225MHz(
250/200/167MHz(
K7A203200B
K7A203600B
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PDF
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KM736V687A
Abstract: KM736V687A-7 KM736V687A-8 KM736V687A-9
Text: KM736V687A 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. • Write Self-Timed Cycle. • On-Chip Address and Control Registers. • VDD= 3.3V+0.3V/-0.165V Power Supply.
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KM736V687A
64Kx36
64Kx36-Bit
KM736V687A
100-TQFP-1420A
KM736V687A-7
KM736V687A-8
KM736V687A-9
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Untitled
Abstract: No abstract text available
Text: IS64LF6436 IS64LF6432 ISSI 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM PRELIMINARY INFORMATION AUGUST 2003 DESCRIPTION FEATURES The ISSI IS64LF6432 and IS64LF6436 are high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, memory. IS64LF6432 is organized as 65,536 words by 32 bits and IS64LF6436 is
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IS64LF6436
IS64LF6432
64Kx36
100-Pin
5M-1982.
PK13197LQ
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Untitled
Abstract: No abstract text available
Text: K7B203625B K7B203225B K7B201825B 64Kx36/x32 & 128Kx18 Synchronous SRAM Document Title 64Kx36/x32 & 128Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial draft Jan. 17. 2002 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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K7B203625B
K7B203225B
K7B201825B
64Kx36/x32
128Kx18
128Kx18-Bit
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IS61LF6432A
Abstract: IS61LF6436A
Text: IS61LF6436A IS61LF6432A ISSI 64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM OCTOBER 2005 DESCRIPTION FEATURES The ISSI IS61LF6432A and IS61LF6436A are high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, memory. IS61LF6432A is
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IS61LF6436A
IS61LF6432A
64Kx36
IS61LF6432A
IS61LF6436A
Individual30
PK13197LQ
5M-1982.
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM736V689/L 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. History Draft Date Remark Rev. 0.0 Initial draft Nov. 17. 1996 Preliminary Rev. 1.0 Final spec release
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KM736V689/L
64Kx36
64Kx36-Bit
100TQFP
100-TQFP-1420A
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Untitled
Abstract: No abstract text available
Text: a W M YP64K36V-XTQX WHITE /MICROELECTRONICS 64Kx36 M o n o lith ic P ipelined Synchronous SRAM advanced * FEATURES • Fast Access Times of 8 and 10ns ■ Industrial and M ilitary Temperature Ranges ■ Fast O E Access Time of 7ns ■ W rite Pass-through Capability
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YP64K36V-XTQX
64Kx36
100-pin
30pFOutput
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance KM736V695/L 64Kx36 Synchronous SRAM 64K x 36-Bit Synchronous Pipelined Burst SRAM GENERAL DESCRIPTION FEATURES • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst • On-Chip Address Counter. • Self-Timed Write Cycle. • On- Chip Address and Control Registers.
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KM736V695/L
64Kx36
36-Bit
KM736V695/L
DD2M01b
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PDF
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Untitled
Abstract: No abstract text available
Text: KM736V689/L 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION - Synchronous Operation. . 2 Stage Pipelined operation with 4 Burst. - On-Chip Address Counter. . Self-Timed Write Cycle. - On-Chip Address and Control Registers.
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KM736V689/L
64Kx36
64Kx36-Bit
100-TQFP-1420A
14ELECTRONICS
71b4145
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PDF
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Untitled
Abstract: No abstract text available
Text: KM736V695/L 64Kx36 Synchronous SRAM 64Kx36~Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The KM736V695/L is a 2,359,296-bit Synchronous Static Ran dom Access Memory designed for high performance second
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KM736V695/L
64Kx36
KM736V695/L
296-bit
36bits
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PDF
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vivax
Abstract: No abstract text available
Text: KM736V687A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM Revision History Draft Date REMARK Initial draft July. 03. 1998 Prelim inary 0.1 Change DC Characteristics. Icc value from 320m A to 250m A at -7. Icc value from 300m A to 230m A at -8.
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KM736V687A
64Kx36-Bit
64Kx36
100-TQFP-1420A
vivax
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 64Kx36 Synchronous SRAM KM736V689A Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May. 19. 1998 Prelim inary 0.1 Change tOH Min value from 1.3 to 1.0 at tcyc 5.0
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64Kx36
KM736V689A
64Kx36-Bit
100TQFP
183MHz
225MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: a WM Y64K36V-XTQX WHITE /MICROELECTRONICS 64Kx36 Monolithic Flow Through Synchronous SRAM advanced* FEATURES • Fast Access Times of 10 and 11 ns ■ Industrial and M ilitary Temperature Ranges ■ Fast OE Access Time of 7ns ■ W rite Pass-through Capability
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Y64K36V-XTQX
64Kx36
30pFOutput
100-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: 6 4 K x 36 S y n c h r o n o u s SR A M KM 736V689/ L t 64Kx36-Bit Sync hr ono us Pipelined Burst SR AM , 3.3V Power Datasheets for 100TQFP R e v is io n H is to ry R ev.N o. H Istorv Draft Date R e m ark Rev. 0.0 Initial draft Nov. Preliminary Rev. 1.0 Final spec release
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736V689/
64Kx36-Bit
100TQFP
100-TQ
FP-1420A
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PDF
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Untitled
Abstract: No abstract text available
Text: KM736V687 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • ■ • • • • The KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state perfor
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KM736V687
64Kx36-Bit
100-TQFP-1420A
64Kx36
KM736V687
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PDF
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Untitled
Abstract: No abstract text available
Text: KM736V687A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Burst SRAM Revision History Draft Date REMARK Initial draft July. 03. 1998 Prelim inary 0.1 Change DC Characteristics. Ic c value from 320m A to 250m A at -7. Ic c value from 300m A to 230m A at -8.
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OCR Scan
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KM736V687A
64Kx36
64Kx36-Bit
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PDF
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