Contextual Info: Surface Mounting EMI Supression Filters Type SLT/P/-/SM3 TYPIC A L IN SER TIO N LOSS dB (50 ohm sys. shielded housing) TYPE No. FEATURES • • • • 1MHz 10MHz 100M Hz 1GHz 10G Hz S LT/P /1500/S M 3 2 16 53 65 65 S LT/P /22000/S M 3 12 48 65 65 65 unique surface mounting pi- filter

PT-S501

Abstract: powertech
Contextual Info: “BIG IDEAS IN 200 AM PERES F T -6501 P T -65 0 2 S ILICO N IMPINI T R A N S IS T O R S MAXIMUM RATINGS PT-6501 PT-6502 80V 100V 60V 80V 10V 10V 200A 200A 100A 100 A 350W 350W 200W 200W -65 to 200° C -65 to 200°C -65 to 200°C -65 to 200° C SYMBOL Collector-Base Voltage

2N1163

Abstract: 2N1165 2N1167 2N2553 2N2552 2N2669 2N2556 2N1163A A6540 2N1167A
Contextual Info: germanium power transistors PNP TO-41 = 10 to 50A h fE @ Ic / V c e V c e o s u s V ebo Type# (Volts) (Volts) 2N1163 2N1163A 2N1165 2N1165A 2N1167 2N1167A 25 25 35 40 45 50 20 25 25 40 30 50 (Min-Max @ A/V) 15-65@25/l 15-65 25/l 15-65@25/l 15-65®25/l

ICE3B1565J

Abstract: ICE3B0365J INFINEON CoolSET F2 1.1
Contextual Info: D a ta s h e e t, V er s io n 2 .8 , 2 3 A u g 20 1 2 CoolSET -F3R J i tte r Ve r s i on I CE3 B0 3 65 J I CE3 B0 5 65 J I CE3 B1 5 65 J I CE3 B2 0 65 J O f f - Li ne S M P S C ur re nt Mo de C on t ro ll er w it h in t e gr at e d 6 50 V C oo lM O S ® a nd S t a rt u p c e l l

ICE3BR2065

Abstract: ICE3B0365J ice3bxx65j ICE3B1565J ICE3BR2065J 8 pin ic lm 745 ICE3Bxx65J Off-Line SMPS Current Mode Controller ice3b0565j ycap
Contextual Info: D a t as h ee t , V e rs io n 2 . 7, 9 M ay 20 1 2 CoolSET -F3R J i tte r Ve r s i on I CE3 B0 3 65 J I CE3 B0 5 65 J I CE3 B1 5 65 J I CE3 B2 0 65 J O f f - Li ne S M P S C ur re nt Mo de C on t ro ll er w it h in t e gr at e d 6 50 V C oo lM O S ® a nd S t a rt u p c e l l

Contextual Info: D a t as he e t , V e rs io n 2 . 9, 25 M a r 20 1 3 CoolSET -F3 J i tte r Ve r s i on I CE3 B0 3 65 J I CE3 B0 5 65 J I CE3 B1 5 65 J I CE3 B2 0 65 J O f f - Li ne S M P S C ur re nt Mo de C on t ro ll er w it h in t e gr at e d 6 50 V C oo lM O S ® a nd S t a rt u p c e l l

spark gap 600v

Abstract: ice3b0365j ice3b0565j
Contextual Info: D a t as he e t , V e rs io n 2 . 9, 25 M a r 20 1 3 CoolSET -F3 J i tte r Ve r s i on I CE3 B0 3 65 J I CE3 B0 5 65 J I CE3 B1 5 65 J I CE3 B2 0 65 J O f f - Li ne S M P S C ur re nt Mo de C on t ro ll er w it h in t e gr at e d 6 50 V C oo lM O S ® a nd S t a rt u p c e l l

tq-60

Contextual Info: xemitron semiconductors SemitronicsCorp. m discrete devices 4 0 ^ 5 4 1 , DDDQSTl 7 I r - 3 1 'ô l s ilic o n tr a n s is to rs I N T E X / SEMITRONICS CORP 27E D yH F/VH F power transistors Pwar Out e e P|E MHz (W) e v CE 65 65 65 65 40 40 40 40 4.0 4.0

UZ1084L-3.3V

Abstract: UZ1084-3.3V ET5201C-3.3V LM117-3.3V 2N1887 2n3886 2n388b 2n3035 2R2505 CX9162B-3.3v
Contextual Info: jcmitronicr discrete devices SEMICONDUCTORS Semitronics Corp. high current silicon controlled rectifiers TO -83 V *" 110 A m p e re s @ Tc Noted TV« Tc lor RATED CURRENT RRV and VBO 1 CYCLE CURRENT SURGE PEAK AMPS @ T j <°C) 50 100 150 200 250 65 65 65

Contextual Info: AR S 5022 THRU AR(S)5039 DACO SEMICONDUCTOR CO., LTD. TRANSIENT VOLTAGE SUPPRESSOR TYPE 50A Features 50Amp BUTTON DIODE High Surge Capability High Current Capability Low leakage BUTTON-AR Maximum Ratings D Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175

ZP500

Abstract: ZP3000 zp1000 ZP600 ZP300
Contextual Info: Power S em icon du ctor Devices General Rectifier D iodes—Disc Type Model ZP300/32 ZP400/24 ZP500/32 ZP600/20 ZP500/65 ZP600/50 ZP800/40 ZP1000/30 ZP2000/06 ZP2000/30 ZP500/65 ZP1000/50 ZP2000/30 ZP3000/20 ZP4000/06 ZP4000/20 ZP 1000/65 ZP2000/50 ZP4000/40

plessey sp

Contextual Info: PLESSEY 12E S EMI CONDUCTORS » 7520513 0010350 5 A PLESSEY W S e m ic o n d u c t o r s . SP8718AC 520MHz + 64/65 TWO MODULUS DIVIDER CONFORMS TO MIL-STD-883C CLASS B TheSP8718 -i-64/65 is a 50mW programmable divider with a maximum specified operating frequency of 520MHz over

Magnum Microwave mixer

Abstract: magnum microwave
Contextual Info: MAGNUM MICROWAVE CÔRP h'i M13T L: R: I: De | s 7SS73D ÛGD0G2S DOUBLE BALANCED MIXER .01— 65 MHz .01— 65 MHz DC— 65 MHz LOW CONVERSION LOSS HIGH ISOLATION MINIATURE TO-8 HERMETIC PACKAGE GUARANTEED SPECIFICATIONS' 1 PARAMETER MIN. TYP. RF LO IF 10 K H z -65 MHz

CTG-34S

Abstract: CTG-32S CTG-33S C120H04Q C120H05Q ctg23s CTG-31S CTG-22S 273B C60P40FE
Contextual Info: - * » £ C60P40FE C80H03Q C80H04Q C80H05Q C80H06Q tt £ Pr s m Vr s m kf (V) I # £ Ì H Vr Vj Io (V) (V) (V) (A) V 440 35 45 55 65 400 30 40 50 60 60 80 80 80 80 35 45 55 65 35 30 40 50 60 30 120 120 120 120 120 45 55 65 35 35 40 50 60 30 30 120 120

RER175

Abstract: ebm-papst RER175DC
Contextual Info: RER175DC Series ø Motorized Imp eller 175 x 69mm - New S-Force Models W lb gt. s 48 36 to 65 42 tbd 65 Ball Leads 3400 1.71 576.8 48 36 to 72 166 8.5 65 Ball Leads 5400 1.71 at Fe Be e Cu rv ur es S (R pee PM d ) B Ty eari p e ng M Te ax m Am p C b. 353.0

Contextual Info: SMT : Page 83 2m m FL SPECIFICATIONS Materials: Mates with: C L T S O T. S O W , GSOT. T L E , S M M , M M S , TG S O Insulator Material: Black Liquid Crystal Polymer Terminal Material: Phosphor Bronze Operating Temp Range: -65 C to +135°C with Tin: -65 C to +125 ;C with Gold

SOT-23 marking AFE

Abstract: 65 b S
Contextual Info: NPN Silicon AF Transistors • • • • B CW 65 B CW 66 For general AF applications High cu rre n t gain Lo w co lle c to r-e m itte r saturation voltage C om plem entary types'. BCW 67, BCW 68 PNP Type □ BCW 65 A □ BCW 65 B S BCW 65 C Marking EA

zener diode 1N4756a

Abstract: 1N4756A
Contextual Info: 1N4756A asii SILICON ZENER DIODE DESCRIPTION: The 1N4756A is a Silicon Regulator Diode for General Purpose Voltage Control Applications. MAXIMUM RATINGS If 200 mA Vz 47 V Pd i s s 1.0 W @ Ta $ 50 °C Tj -65 0C to +200 0C Ts t g -65 0C to +200 0C m in im u m

Contextual Info: _u _ REV. DCR NATURE DE LA MODIFICATION DATE VISA SCALE 2,500 Force d’enfoncement m CODE PRODUIT DESIGNATION TRAITEMENT Course mm 65 A00 303 FP LFS M D P S LFS Ag 0,20'qq2 mm 2,4±0,6 N 65 A00 304 FP LFS M D P G LFS Au 0,20’°q2 mm 2,4±0,6 N 65 A00 503 FP LFS

Contextual Info: AR S 3522 THRU AR(S)3539 DACO SEMICONDUCTOR CO., LTD. TRANSIENT VOLTAGE SUPPRESSOR TYPE 35A Features 35Amp BUTTON DIODE High Surge Capability High Current Capability Low leakage BUTTON-AR Maximum Ratings D Operating Temperature: -65 C to +175 Storage Temperature: -65 C to +175

Contextual Info: MAXIMUM RATINGS Rating Symbol C o lle c to r -E m itte r V o lta g e NPN PNP M P S 6 5 2 0 , MPS6521 M P S 65 2 3 C o lle c to r-B a s e V o lta g e Unit 25 25 V dc v CB0 40 M P S 65 2 0, M P S 6521 M P S 65 2 3 25 Vebo 4.0 V dc C o lle c to r C u rre n t — C o n tin u o u s

4511 gm

Abstract: TTC 5200 ir 8707 nte 6250 76722 8840 TIC 1260 stoneridge se 5000 x4202 STR G 6352 SG 3425 N
Contextual Info: ülmEE Distributors W I R E L E S S 4 fiC Europe Austria SPO ERL E ELE C TR O N IC Am K ehlerpark 1 6850 D ornbirn Tel: 43 5572 38 65 0 0 -0 Fax: 43 5572 38 65 0 0 -9 0 A rrow D enm ark A/S S m edeholm 13 A 2730 Herlev Tel: 45 44 50 82 00 Fax: 45 44 50 82 03

Contextual Info: 67C4502-35/50/65/80 Deep First-in First-out FIFO 1024x9 CMOS Memory a s DISTINCTIVE CHARACTERISTICS RAM based FIFO 1024x9 organization Cycle tim es of 45/65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Retransmit capability Expandable in both width andjtepth

Contextual Info: F - 1 9 9 '1 m sâm lêc c : RMINAL S Specifications: TS, TD Q l Insulater Material: s Black Glass Filled Polyester Termini I Material: Brass, e<cept Style G Is Phosphor Bronze Operating Temp Range: -65°C to+125 'C with Gold -65°C to + 105'C with Tin Dielectric Withstanding