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    F222M

    Abstract: 65608E-45
    Text: Pages 1 to 22 INTEGRATED CIRCUITS, SILICON MONOLITHIC, LOW POWER, CMOS 128K X 8 ASYNCHRONOUS STATIC RANDOM ACCESS MEMORY WITH THREE STATE OUTPUTS BASED ON TYPE 65608E ESCC Detail Specification No. 9301/047 Issue 2 October 2007 Document Custodian: European Space Agency - see https://escies.org


    Original     		PDF 65608E 100ns. F222M 65608E-45

    SMC9-65608EV-45SB

    Abstract: M65608E MMDJ-65608EV-30 MMDJ-65608EV-45 SB32
    Text: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • • • • – Active: 250 mW Typ – Standby: 1 µW (Typ) – Data Retention: 0.5 µW (Typ) Wide Temperature Range: -55°C to +125°C


    Original     		PDF M65608E M65608o 4151K SMC9-65608EV-45SB M65608E MMDJ-65608EV-30 MMDJ-65608EV-45 SB32

    atmel 0745

    Abstract: ATMEL 0828 4151p
    Text: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 600 mW Max – Standby: 1 µW (Typ) Wide Temperature Range: -55⋅C to +125⋅C 400 Mils Width Packages: FP32 and SB32


    Original     		PDF M65608E 4151P atmel 0745 ATMEL 0828

    AT697E

    Abstract: TM1019 atmel 022 67025E AT17LV010 AT60142F AT28C010-12DK 65608E 4172F-AERO-06 ATMEL 350
    Text: Aerospace Products Radiation Test Result Summary Table 1. Memories, ASIC and FPGA Products Total Dose TM1019.5 Functional Parametric Latch-up 25°C SEU LET Threshold Cross Section VCC Max VCC Min /Bit Device Type Format/Function/ Speed Part Number (Krads)


    Original     		PDF TM1019 65608E 65609E AT60142F/ 67204H 4172F AT697E atmel 022 67025E AT17LV010 AT60142F AT28C010-12DK 65608E 4172F-AERO-06 ATMEL 350

    M65608E

    Abstract: MMDJ-65608EV-30 MMDJ-65608EV-45 SB32 M65608
    Text: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • • – Active: 250 mW Typ – Standby: 1 µW (Typ) – Data Retention: 0.5 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Packages: FP32 and SB32


    Original     		PDF M65608E M65608E 4151I MMDJ-65608EV-30 MMDJ-65608EV-45 SB32 M65608

    4151M

    Abstract: M65608E MMDJ-65608EV-30-E SB32
    Text: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 600 mW Max – Standby: 1 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Packages: FP32 and SB32


    Original     		PDF M65608E 4151L 4151M MMDJ-65608EV-30-E SB32

    Untitled

    Abstract: No abstract text available
    Text: 65608E 128 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The 65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. TEMIC brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or


    Original     		PDF M65608E M65608E 65608E

    radiation tolerant DSP Atmel

    Abstract: 4172A CMOS OR Gates TM1019 80C32E 67025E TSC21020F 65608E
    Text: Aerospace Products Radiation Test Result Summary Total Dose TM1019.5 Functional Device Type Format/Function/Speed Parametric Part-number (Krads) (Krads) Latch-up 25°C SEU LET Threshold Cross Section Vcc max. Vcc min. /Bit Typical Iccsb (mA) (MeV/mg/cm2) (MeV/mg/cm2)


    Original     		PDF TM1019 ROMLESS/30 80C32E 128Kx8/30ns 65608E 128Kx8/40ns 65609E 4Kx9/15 67204F 16Kx9/15 radiation tolerant DSP Atmel 4172A CMOS OR Gates 80C32E 67025E TSC21020F 65608E

    Untitled

    Abstract: No abstract text available
    Text: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 250 mW Typ – Standby: 1 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Packages: FP32 and SB32


    Original     		PDF M65608E 4151L

    MMDJ-65608EV-30MQ

    Abstract: 5962-8959804MUA QP7C1009B-20DMB 5962-89598 EDI88128LPS70LB PDM41024S20L32 5962-8959824 PDM41024S45TC a3021 EDI88128CS85ZB
    Text: REVISIONS LTR DESCRIPTION H Add device type 41. Make corrections to case outline N, dimension b. Add vendor CAGE 65786 as source of supply for device type 41. Update boilerplate. Editorial changes throughout. 97-03-26 Raymond Monnin J Add device types 42, 43, 44, 45, and 46. Editorial changes to pages


    Original     		PDF 5962-8959847Q6A F7400 MM0-65608EV-30MQ 5962-8959847V6A SM0-65608EV-30SV MMDJ-65608EV-30MQ 5962-8959804MUA QP7C1009B-20DMB 5962-89598 EDI88128LPS70LB PDM41024S20L32 5962-8959824 PDM41024S45TC a3021 EDI88128CS85ZB

    5962-89598

    Abstract: MMC9-65608EV-30 MMDJ-65608EV-30 MMDJ-65608EV-45 SB32 M65608E
    Text: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 250 mW Typ – Standby: 1 µW (Typ) – Data Retention: 0.5 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Package


    Original     		PDF M65608E 4151G 5962-89598 MMC9-65608EV-30 MMDJ-65608EV-30 MMDJ-65608EV-45 SB32

    5962-8959847QZC

    Abstract: M65608E MMDJ-65608EV-30-E SB32 5962-8959818MTC
    Text: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 600 mW Max – Standby: 1 µW (Typ) Wide Temperature Range: -55⋅C to +125⋅C 400 Mils Width Packages: FP32 and SB32


    Original     		PDF M65608E 4151O 5962-8959847QZC MMDJ-65608EV-30-E SB32 5962-8959818MTC

    4172G-AERO-06

    Abstract: ATMEL 350 65609E TM1019 atmel 022 67025E AT17LV010 AT60142F 65608E CROSS ATMEL
    Text: Aerospace Products Radiation Test Result Summary Table 1. Memories, ASIC and FPGA Products Total Dose TM1019.5 Functional Parametric Latch-up 25°C SEU LET Threshold Cross Section VCC Max VCC Min /Bit Device Type Format/Function/ Speed Part Number (Krads)


    Original     		PDF TM1019 65608E 65609E AT60142F/ 67204H 4172G 4172G-AERO-06 ATMEL 350 65609E atmel 022 67025E AT17LV010 AT60142F 65608E CROSS ATMEL

    5962-89598

    Abstract: M65608E MMDJ-65608EV-30 MMDJ-65608EV-45 SB32
    Text: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 250 mW Typ – Standby: 1 µW (Typ) – Data Retention: 0.5 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Packages: FP32 and SB32


    Original     		PDF M65608E 4151H 5962-89598 MMDJ-65608EV-30 MMDJ-65608EV-45 SB32

    5962-89598

    Abstract: M65608E MMDJ-65608EV-30 MMDJ-65608EV-45 SB32
    Text: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • • • • – Active: 250 mW Typ – Standby: 1 µW (Typ) – Data Retention: 0.5 µW (Typ) Wide Temperature Range: -55°C to +125°C


    Original     		PDF M65608E 4151J 5962-89598 M65608E MMDJ-65608EV-30 MMDJ-65608EV-45 SB32

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    65608

    Abstract: P883 65608E M65608
    Text: M65608 128 K  8 Very Low Power CMOS SRAM Introduction The M 65608 is a very low power CMOS static RAM organized as 131072 x 8 bits. It is manufactured using the TEMIC high performance CMOS technology named SCMOS. current Typical value = 0.2 µA with a fast access time


    Original     		PDF M65608 SMD5962 65608E 65608 P883 65608E M65608

    P883

    Abstract: No abstract text available
    Text: L65608 128 K x 8 / 3.3 V Very Low Power CMOS SRAM Introduction The L65608 is a very low power CMOS static RAM organized as 131072 x 8 bits. It is manufactured using the TEMIC high performance CMOS technology named SCMOS. at 45 ns over the full commercial and military


    Original     		PDF L65608 L65608 SMD5962 65608E P883

    65656F

    Abstract: TM1019 DSP 6713 65608E 80C31E 80C32E 80C52E TSC-21020 TSC691E dsp radiation
    Text: Radiation TEMIC Radiation Evaluation Results and Targets Total Dose Device Family Format/ Function/Speed/ Consumption TEMIC Type Total Dose Parametric Latch–Up LET Threshold SEU Cross Section/BIT Functionnal (Krads) (Krads) Iccsb (mA) (MeV/mg/ cm2) (MeV/mg/


    Original     		PDF 80C31E SCC22900 80C32E 80C52E 65162E SCC2215 TM1019 16Kx9 65656F TM1019 DSP 6713 65608E 80C31E 80C32E 80C52E TSC-21020 TSC691E dsp radiation

    TRANSISTOR B737

    Abstract: MD80C31 smd TRANSISTOR code marking 8K 67202FV PGA300 5962-8506401MQA ERC32SIM marking code RAD SMD Transistor npn ISO DIMENSIONAL certificate formats 67205E
    Text: Integrated Circuits for Aerospace and Defense Short Form 1998 16 June 1998 Publisher: TEMIC Semiconductors La Chantrerie BP 70602 44306 Nantes Cedex 03 FRANCE Fax: +33 2 40 18 19 60 E:mail nantes.marcom@temic.fr World Wide Web: http://www.temic.de 16 June 1998


    Original     		PDF

    CMOS OR Gates

    Abstract: TM1019 65609E AT40KEL Radiation Tolerant DSP processor 67025E AT60142 65608E
    Text: Aerospace Products Radiation Test Result Summary Table 1. Memories, ASIC and FPGA Products Total Dose TM1019.5 Functional Parametric Latch-up 25°C SEU LET Threshold Cross Section V CC Max VCC Min /Bit Part Number (Krads) (Krads) Typical ICCSB (mA) (MeV/mg/c


    Original     		PDF TM1019 65608E 65609E AT60142 67204H 67206H 4172D CMOS OR Gates 65609E AT40KEL Radiation Tolerant DSP processor 67025E AT60142 65608E

    A12E

    Abstract: A14E M65608E 45nsmin A16E
    Text: Temic 65608E S e m i c o n d u c t o r s 128 K x 8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M 65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. TEMIC brings the solution to applications where fast computing is as mandatory as low consumption, such as


    OCR Scan     		PDF m65608e M65608E th1999 65608e A12E A14E 45nsmin A16E

    Untitled

    Abstract: No abstract text available
    Text: Temic Semiconductors 128 K X 8 Very Low Power CMOS SRAM M65608 Introduction The M 65608 is a very low power CMOS static RAM organized as 131072 x 8 bits. It is manufactured using the TEMIC high performance CMOS technology named SCMOS. With this process, TEMIC brings the solution to


    OCR Scan     		PDF M65608 0GD7421

    Untitled

    Abstract: No abstract text available
    Text: Temic Semiconductors 128 K X 8 / 3.3 V Very Low Power CMOS SRAM L65608 Introduction The L65608 is a very low power CMOS static RAM organized as 131072 x 8 bits. It is manufactured using the TEMIC high performance CMOS technology named SCMOS. The L65608 provides fast access time of 45 ns for a 3


    OCR Scan     		PDF L65608 L65608 0GD7421