65608E Search Results

F222M

Abstract: 65608E-45
Contextual Info: Pages 1 to 22 INTEGRATED CIRCUITS, SILICON MONOLITHIC, LOW POWER, CMOS 128K X 8 ASYNCHRONOUS STATIC RANDOM ACCESS MEMORY WITH THREE STATE OUTPUTS BASED ON TYPE 65608E ESCC Detail Specification No. 9301/047 Issue 2 October 2007 Document Custodian: European Space Agency - see https://escies.org

A12E

Abstract: A14E M65608E 45nsmin A16E
Contextual Info: Temic 65608E S e m i c o n d u c t o r s 128 K x 8 Very Low Power CMOS SRAM Rad Tolerant Introduction The M 65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. TEMIC brings the solution to applications where fast computing is as mandatory as low consumption, such as

SMC9-65608EV-45SB

Abstract: M65608E MMDJ-65608EV-30 MMDJ-65608EV-45 SB32
Contextual Info: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • • • • – Active: 250 mW Typ – Standby: 1 µW (Typ) – Data Retention: 0.5 µW (Typ) Wide Temperature Range: -55°C to +125°C

atmel 0745

Abstract: ATMEL 0828 4151p
Contextual Info: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 600 mW Max – Standby: 1 µW (Typ) Wide Temperature Range: -55⋅C to +125⋅C 400 Mils Width Packages: FP32 and SB32

AT697E

Abstract: TM1019 atmel 022 67025E AT17LV010 AT60142F AT28C010-12DK 65608E 4172F-AERO-06 ATMEL 350
Contextual Info: Aerospace Products Radiation Test Result Summary Table 1. Memories, ASIC and FPGA Products Total Dose TM1019.5 Functional Parametric Latch-up 25°C SEU LET Threshold Cross Section VCC Max VCC Min /Bit Device Type Format/Function/ Speed Part Number (Krads)

M65608E

Abstract: MMDJ-65608EV-30 MMDJ-65608EV-45 SB32 M65608
Contextual Info: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • • – Active: 250 mW Typ – Standby: 1 µW (Typ) – Data Retention: 0.5 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Packages: FP32 and SB32

4151M

Abstract: M65608E MMDJ-65608EV-30-E SB32
Contextual Info: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 600 mW Max – Standby: 1 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Packages: FP32 and SB32

Contextual Info: 65608E 128 K  8 Very Low Power CMOS SRAM Rad Tolerant Introduction The 65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. TEMIC brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or

Contextual Info: Temic Semiconductors 128 K X 8 Very Low Power CMOS SRAM M65608 Introduction The M 65608 is a very low power CMOS static RAM organized as 131072 x 8 bits. It is manufactured using the TEMIC high performance CMOS technology named SCMOS. With this process, TEMIC brings the solution to

radiation tolerant DSP Atmel

Abstract: 4172A CMOS OR Gates TM1019 80C32E 67025E TSC21020F 65608E
Contextual Info: Aerospace Products Radiation Test Result Summary Total Dose TM1019.5 Functional Device Type Format/Function/Speed Parametric Part-number (Krads) (Krads) Latch-up 25°C SEU LET Threshold Cross Section Vcc max. Vcc min. /Bit Typical Iccsb (mA) (MeV/mg/cm2) (MeV/mg/cm2)

Contextual Info: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 250 mW Typ – Standby: 1 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Packages: FP32 and SB32

MMDJ-65608EV-30MQ

Abstract: 5962-8959804MUA QP7C1009B-20DMB 5962-89598 EDI88128LPS70LB PDM41024S20L32 5962-8959824 PDM41024S45TC a3021 EDI88128CS85ZB
Contextual Info: REVISIONS LTR DESCRIPTION H Add device type 41. Make corrections to case outline N, dimension b. Add vendor CAGE 65786 as source of supply for device type 41. Update boilerplate. Editorial changes throughout. 97-03-26 Raymond Monnin J Add device types 42, 43, 44, 45, and 46. Editorial changes to pages

5962-89598

Abstract: MMC9-65608EV-30 MMDJ-65608EV-30 MMDJ-65608EV-45 SB32 M65608E
Contextual Info: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 250 mW Typ – Standby: 1 µW (Typ) – Data Retention: 0.5 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Package

5962-8959847QZC

Abstract: M65608E MMDJ-65608EV-30-E SB32 5962-8959818MTC
Contextual Info: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 600 mW Max – Standby: 1 µW (Typ) Wide Temperature Range: -55⋅C to +125⋅C 400 Mils Width Packages: FP32 and SB32

5962-89598

Abstract: M65608E MMDJ-65608EV-30 MMDJ-65608EV-45 SB32
Contextual Info: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • – Active: 250 mW Typ – Standby: 1 µW (Typ) – Data Retention: 0.5 µW (Typ) Wide Temperature Range: -55°C to +125°C 400 Mils Width Packages: FP32 and SB32

LT3973-3.3

Abstract: 5962-8959821MMA 5962-89598 qml-38535 5962-8959824 5962-8959838MZA EDI88128CS15TB EDI88130LPS100L32B S128K8 S128K8-85MC
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED H Add device type 41. Make corrections to case outline N, dimension b. Add vendor CAGE 65786 as source of supply for device type 41. Update boilerplate. Editorial changes throughout. 97-03-26 Raymond Monnin

Contextual Info: Temic Semiconductors 128 K X 8 / 3.3 V Very Low Power CMOS SRAM L65608 Introduction The L65608 is a very low power CMOS static RAM organized as 131072 x 8 bits. It is manufactured using the TEMIC high performance CMOS technology named SCMOS. The L65608 provides fast access time of 45 ns for a 3

5962-89598

Abstract: M65608E MMDJ-65608EV-30 MMDJ-65608EV-45 SB32
Contextual Info: Features • Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • • • • • – Active: 250 mW Typ – Standby: 1 µW (Typ) – Data Retention: 0.5 µW (Typ) Wide Temperature Range: -55°C to +125°C

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

65608

Abstract: P883 65608E M65608
Contextual Info: M65608 128 K  8 Very Low Power CMOS SRAM Introduction The M 65608 is a very low power CMOS static RAM organized as 131072 x 8 bits. It is manufactured using the TEMIC high performance CMOS technology named SCMOS. current Typical value = 0.2 µA with a fast access time

P883

Contextual Info: L65608 128 K x 8 / 3.3 V Very Low Power CMOS SRAM Introduction The L65608 is a very low power CMOS static RAM organized as 131072 x 8 bits. It is manufactured using the TEMIC high performance CMOS technology named SCMOS. at 45 ns over the full commercial and military

65656F

Abstract: TM1019 DSP 6713 65608E 80C31E 80C32E 80C52E TSC-21020 TSC691E dsp radiation
Contextual Info: Radiation TEMIC Radiation Evaluation Results and Targets Total Dose Device Family Format/ Function/Speed/ Consumption TEMIC Type Total Dose Parametric Latch–Up LET Threshold SEU Cross Section/BIT Functionnal (Krads) (Krads) Iccsb (mA) (MeV/mg/ cm2) (MeV/mg/

TRANSISTOR B737

Abstract: MD80C31 smd TRANSISTOR code marking 8K 67202FV PGA300 5962-8506401MQA ERC32SIM marking code RAD SMD Transistor npn ISO DIMENSIONAL certificate formats 67205E
Contextual Info: Integrated Circuits for Aerospace and Defense Short Form 1998 16 June 1998 Publisher: TEMIC Semiconductors La Chantrerie BP 70602 44306 Nantes Cedex 03 FRANCE Fax: +33 2 40 18 19 60 E:mail nantes.marcom@temic.fr World Wide Web: http://www.temic.de 16 June 1998

CMOS OR Gates

Abstract: TM1019 65609E AT40KEL Radiation Tolerant DSP processor 67025E AT60142 65608E
Contextual Info: Aerospace Products Radiation Test Result Summary Table 1. Memories, ASIC and FPGA Products Total Dose TM1019.5 Functional Parametric Latch-up 25°C SEU LET Threshold Cross Section V CC Max VCC Min /Bit Part Number (Krads) (Krads) Typical ICCSB (mA) (MeV/mg/c