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    65767B Price and Stock

    MATRA HARRIS SEMICONDUCTOR (SEE TEMIC) HM3-65767BK-5

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    Bristol Electronics HM3-65767BK-5 17,731
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    Matra MHS HM365767BM5

    Electronic Component
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    ComSIT USA HM365767BM5 22
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    Matra MHS HM365767BN5

    16K X 1 STANDARD SRAM Standard SRAM, 16KX1, 50ns, CMOS, PDIP20
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    ComSIT USA HM365767BN5 11
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    Others HM365767BM5

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    Chip 1 Exchange HM365767BM5 18
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    65767B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    65728

    Abstract: No abstract text available
    Text: HM 65767B MATRA MHS 16 K x 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TTL compatible and operate from single 5 V supply thus


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    65767B 65767B 16384x1 65728 PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original
    1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G PDF

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


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    WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 PDF

    P-Channel Depletion-Mode

    Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
    Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385


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    2N5547JANTX 2N5547JANTXV 2N4856JAN 2N6660JANTX 2N4856JANTX 2N6660JANTXV 2N4856JANTXV 2N6661JAN 2N4857JAN 2N6661JANTX P-Channel Depletion-Mode MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545 PDF

    Untitled

    Abstract: No abstract text available
    Text: T em ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TIL


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    65767B 65767B 16384x1 bfl45b 00GS411 PDF

    HM 65767B

    Abstract: 300MILS
    Text: Tem ic Semiconductors 16 K x 1 High Speed CMOS SRAM HM 65767B Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using


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    65767B 65767B 16384x1 ss65W HM 65767B 300MILS PDF

    hm65767

    Abstract: HM 65767B 65767B
    Text: HM 65767B DATA SHEET_ 16 Kx 1 HIGH SPEED CMOS SRAM FEATURES FAST ACCESS TIME COMMERCIAL : 25/35/45/55 ns max MILITARY : 25/35/45/55 ns (max) LOW POWER CONSUMPTION ACTIVE: 385 mW (max) STANDBY : 110 mW (max) WIDE TEMPERATURE RANGE : - 55'C TO + 125’C


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    65767B 16384x1 50KHz HM65767B/Rev hm65767 HM 65767B PDF

    t 16 k

    Abstract: F01011
    Text: Tem ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 25 ns are available with maximum


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    65767B 16384x1 00GS411 t 16 k F01011 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM 65767B DATA SHEET 16 K x 1 HIGH SPEED CMOS SRAM FEATURES . . . FAST ACCESS TIME COMMERCIAL: 25/35/45/55 ns max MILITARY: 25/35/45/55 ns (max) LOW POWER CONSUMPTION ACTIVE: 385 mW (max) STANDBY: 110 mW (max) . . 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS


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    65767B 65767B 16384x1 65767B/Rev PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ HM 65767B 16 K x 1 HIGH SPEED CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME


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    65767B 65767B GDG33T3 65767Bi PDF