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    65768B Search Results

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    65768B Price and Stock

    Matra MHS HM3-65768BH-5

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    Bristol Electronics HM3-65768BH-5 20
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    Matra MHS HM3-65768BM-5

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    Bristol Electronics HM3-65768BM-5 8 2
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    Spectrum Control 68BCN-1001F*H

    Thin Film Resistors - SMD RESISTOR CHIP 1.0K
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    TTI 68BCN-1001F*H WAFL 484
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    Spectrum Control 68BCN-49R9F*H

    Thin Film Resistors - SMD 20X20 NICR BACK CONT, 49.9 OHM
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    TTI 68BCN-49R9F*H WAFL 484
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    Spectrum Control 68BCN-3002B*H

    Thin Film Resistors - SMD 20X20 NICR BACK CONT
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    TTI 68BCN-3002B*H WAFL 484
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    65768B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    hm65768

    Abstract: No abstract text available
    Text: HM 65768B MATRA MHS 4 K x 4 High Speed CMOS SRAM Introduction The HM 65768B is a high speed CMOS static RAM organized as 4096 × 4 bits. It is manufactured using MHS’s high performance CMOS technology. Each memory expansion is provided by an active low chip


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    65768B 65768B hm65768 PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G PDF

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


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    WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 PDF

    P-Channel Depletion-Mode

    Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
    Text: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385


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    2N5547JANTX 2N5547JANTXV 2N4856JAN 2N6660JANTX 2N4856JANTX 2N6660JANTXV 2N4856JANTXV 2N6661JAN 2N4857JAN 2N6661JANTX P-Channel Depletion-Mode MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545 PDF

    Untitled

    Abstract: No abstract text available
    Text: M il DATA SHEET_ HM 65768B 4 Kx4 HIGH SPEED CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY FAST ACCESS TIME


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    65768B 65768B 65768B/Rev PDF

    TELIC

    Abstract: hm 65728b
    Text: HM 65768B BURN-IN SCHEMATICS F4W VW — | 1 F 5 - y \W — 2 20 - VCC F6—v \W — 3 18 —A W — R1- 19 - A W — R1- F 7 -M W — 4 17 —A W — R1- F 8 -A W — 5 16 - A W — R1- F9- t A W - i 6 15 - A W — RHR2-


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    F10-AWâ F11-AWâ R2-F12 R2-F13 R2-F15 300Qperrow 25KHz 65768B option50 65787/RSV TELIC hm 65728b PDF

    s6T making

    Abstract: HM65768
    Text: Tem ic HM 65768B MATRA MHS 4 K X 4 High Speed CMOS SRAM Introduction The HM 65768B is a high speed CMOS static RAM organized as 4096 x 4 bits. It is manufactured using MHS’s high performance CMOS technology. Each memory expansion is provided by an active low chip


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    65768b 20pins -S0j20pins Sflbfl45tj s6T making HM65768 PDF

    Untitled

    Abstract: No abstract text available
    Text: mw March 1994 DATA SHEET_ HM 65768B 4 Kx4 HIGH SPEED CMOS SRAM FEATURES • FAST ACCESS TIME COMMERCIAL: 25/35/45/55 ns max MILITARY : 25/35/45/55 ns (max) . LOW POWER CONSUMPTION ACTIVE: 200 mW(typ) STANDBY : 35 mW (typ) . WIDE TEMPERATURE RANGE :


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    65768B 65768B/Rev PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic HM 65768B MATRA MHS 4 K X 4 High Speed CMOS SRAM Introduction The HM 65768B is a high speed CMOS static RAM organized as 4096 x 4 bits. It is manufactured using MHS’s high performance CMOS technology. Each memory expansion is provided by an active low chip


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    65768B 65768B 0G05420 PDF

    Untitled

    Abstract: No abstract text available
    Text: T em ic HM 65768B Semi co n du ct o rs 4 K x 4 High Speed CMOS SRAM Short description. P lease refer to the full datasheet for detailed technical inform ation. Introduction T he H M 65768B is a high speed C M O S static RA M organized as 4096 x 4 bits. It is m anufactured using


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    65768B 65768B n97tgB PDF

    PDIL20

    Abstract: e6210
    Text: Temic S e m i c o n d u c t o r s Memories EEPROM Devices Funcdon Part Number Key Features Package e6210 64-bit serial EEPROM ' Ultra low current consumption 1 2-V operation for reading e6220 64-bit low-voltaee serial EEPROM • 2.5-V operation for program


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    e6210 64-bit e6220 HM65767Bx-5 HM65767BX-2 HM65768BX-5 65768Bx-2 HM65728B HM65789X-5 PDIL20 PDF